G40N120D - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

G40N120D40A 1200V Trenchstop Insulated Gate Bipolar Transistor1 DescriptionThese Insulated Gate Bipolar Transistor used advancedtrench and Fieldstop technology design, provided excellentVcesat and switching speed ,low gate charge. Whichaccords with the RoHS standard.2 Features Low Vcesat Low gate charge Excellent switching speed Easy paralleling capability due

IGW40N120H3High speed switching series third generationHigh speed IGBT in Trench and Fieldstop technologyCFeatures:TRENCHSTOPTM 1200V technology offering very low VCEsatGE low EMI maximum junction temperature 175C qualified according to JEDEC for target applications Pb-free lead plating; RoHS compliant complete product spectrum and PSpice Mode

NGTG40N120FL2WGIGBT - Field Stop IIThis Insulated Gate Bipolar Transistor (IGBT) features a robust andcost effective Field Stop II Trench construction, and provides superiorperformance in demanding switching applications, offering both lowon state voltage and minimal switching loss. The IGBT is well suitedfor UPS and solar applications.Features http://onsemi.com Extremely Eff

NGTG40N120FL2WGIGBT - Field Stop IIThis Insulated Gate Bipolar Transistor (IGBT) features a robust andcost effective Field Stop II Trench construction, and provides superiorperformance in demanding switching applications, offering both lowon state voltage and minimal switching loss. The IGBT is well suitedfor UPS and solar applications.Features http://onsemi.com Extremely Eff

TSG40N120CE N-Channel IGBT with FRD. TO-264 Pin Definition: PRODUCT SUMMARY 1. Gate 2. Collector VCES (V) VGES (V) IC (A) 3. Emitter 1200 20 40 General Description The TSG40N120CE using proprietary trench design and advanced NPT technology, the 1200V NPT IGBT offers superior conduction and switching performances, high avalanche ruggedness and easy parallel operation.

TSG40N120CE N-Channel IGBT with FRD. TO-264 Pin Definition: PRODUCT SUMMARY 1. Gate 2. Collector VCES (V) VGES (V) IC (A) 3. Emitter 1200 20 40 General Description The TSG40N120CE using proprietary trench design and advanced NPT technology, the 1200V NPT IGBT offers superior conduction and switching performances, high avalanche ruggedness and easy parallel operation.