All IGBT. G40N120D Equivalents Search

G40N120D 40A 1200V Trenchstop Insulated Gate Bipolar Transistor 1 Description These Insulated Gate Bipolar Transistor used advanced trench and Fieldstop technology design, provided excellent Vcesat and switching speed ,low gate charge. Which accords with the RoHS standard. 2 Features Low Vcesat Low gate charge Excellent switching speed Easy paralleling capability due ... See More ⇒

IGW40N120H3 High speed switching series third generation High speed IGBT in Trench and Fieldstop technology C Features TRENCHSTOPTM 1200V technology offering very low V CEsat G E low EMI maximum junction temperature 175 C qualified according to JEDEC for target applications Pb-free lead plating; RoHS compliant complete product spectrum and PSpice Mode... See More ⇒

NGTG40N120FL2WG IGBT - Field Stop II This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop II Trench construction, and provides superior performance in demanding switching applications, offering both low on state voltage and minimal switching loss. The IGBT is well suited for UPS and solar applications. Features http //onsemi.com Extremely Eff... See More ⇒

NGTG40N120FL2WG IGBT - Field Stop II This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop II Trench construction, and provides superior performance in demanding switching applications, offering both low on state voltage and minimal switching loss. The IGBT is well suited for UPS and solar applications. Features http //onsemi.com Extremely Eff... See More ⇒

TSG40N120CE N-Channel IGBT with FRD. TO-264 Pin Definition PRODUCT SUMMARY 1. Gate 2. Collector VCES (V) VGES (V) IC (A) 3. Emitter 1200 20 40 General Description The TSG40N120CE using proprietary trench design and advanced NPT technology, the 1200V NPT IGBT offers superior conduction and switching performances, high avalanche ruggedness and easy parallel operation. ... See More ⇒

TSG40N120CE N-Channel IGBT with FRD. TO-264 Pin Definition PRODUCT SUMMARY 1. Gate 2. Collector VCES (V) VGES (V) IC (A) 3. Emitter 1200 20 40 General Description The TSG40N120CE using proprietary trench design and advanced NPT technology, the 1200V NPT IGBT offers superior conduction and switching performances, high avalanche ruggedness and easy parallel operation. ... See More ⇒