G40N120D Datasheet PDF and Equivalents Search

 ..1. Size:974K  cn wxdh
 g40n120d.pdf

G40N120D 40A 1200V Trenchstop Insulated Gate Bipolar Transistor 1 Description These Insulated Gate Bipolar Transistor used advanced trench and Fieldstop technology design, provided excellent Vcesat and switching speed ,low gate charge. Which accords with the RoHS standard. 2 Features Low Vcesat Low gate charge Excellent switching speed Easy paralleling capability due ... See More ⇒

 7.1. Size:750K  infineon
 ig40n120h3 1 1 final.pdf

IGW40N120H3 High speed switching series third generation High speed IGBT in Trench and Fieldstop technology C Features TRENCHSTOPTM 1200V technology offering very low V CEsat G E low EMI maximum junction temperature 175 C qualified according to JEDEC for target applications Pb-free lead plating; RoHS compliant complete product spectrum and PSpice Mode... See More ⇒

 7.2. Size:183K  onsemi
 ngtg40n120fl2.pdf

NGTG40N120FL2WG IGBT - Field Stop II This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop II Trench construction, and provides superior performance in demanding switching applications, offering both low on state voltage and minimal switching loss. The IGBT is well suited for UPS and solar applications. Features http //onsemi.com Extremely Eff... See More ⇒

 7.3. Size:183K  onsemi
 ngtg40n120fl2wg.pdf

NGTG40N120FL2WG IGBT - Field Stop II This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop II Trench construction, and provides superior performance in demanding switching applications, offering both low on state voltage and minimal switching loss. The IGBT is well suited for UPS and solar applications. Features http //onsemi.com Extremely Eff... See More ⇒

 7.4. Size:652K  taiwansemi
 tsg40n120ce.pdf

TSG40N120CE N-Channel IGBT with FRD. TO-264 Pin Definition PRODUCT SUMMARY 1. Gate 2. Collector VCES (V) VGES (V) IC (A) 3. Emitter 1200 20 40 General Description The TSG40N120CE using proprietary trench design and advanced NPT technology, the 1200V NPT IGBT offers superior conduction and switching performances, high avalanche ruggedness and easy parallel operation. ... See More ⇒

 7.5. Size:656K  taiwansemi
 tsg40n120.pdf

TSG40N120CE N-Channel IGBT with FRD. TO-264 Pin Definition PRODUCT SUMMARY 1. Gate 2. Collector VCES (V) VGES (V) IC (A) 3. Emitter 1200 20 40 General Description The TSG40N120CE using proprietary trench design and advanced NPT technology, the 1200V NPT IGBT offers superior conduction and switching performances, high avalanche ruggedness and easy parallel operation. ... See More ⇒