JJT50N65UE Todos los transistores

 

JJT50N65UE - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: JJT50N65UE
   Tipo de transistor: IGBT + Diode
   Código de marcado: T5065UE
   Polaridad de transistor: N

ESPECIFICACIONES TECNICAS


   Pcⓘ - Máxima potencia disipada: 312 W
   |Vce|ⓘ - Tensión máxima colector-emisor: 650 V
   |Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
   |Ic|ⓘ - Colector de Corriente Continua a 25℃: 100 A
   |VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 1.9 V @25℃
   |VGEth|ⓘ - Tensión máxima de puerta-umbral: 5.6 V
   Tjⓘ - Temperatura máxima de unión: 175 ℃
   trⓘ - Tiempo de subida, typ: 81 nS
   Coesⓘ - Capacitancia de salida, typ: 136 pF
   Qgⓘ - Carga total de la puerta, typ: 158 nC
   Paquete / Cubierta: TO247
 

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JJT50N65UE Datasheet (PDF)

 ..1. Size:3693K  jiejie micro
 jjt50n65ue.pdf pdf_icon

JJT50N65UE

650V 50A Trench and Field Stop IGBTJJT50N65UEKey performance: V =650VCETO-247 I =50A@T =100C C V =1.9VCE(sat)Features: Trench and field-stop technology. Easy parallel switching capability.GCEBenefits: High efficiency for inverters. High ruggedness performance. RoHS compliant.Applications: PFC applications Welding machi

 5.1. Size:3697K  jiejie micro
 jjt50n65uh.pdf pdf_icon

JJT50N65UE

650V 50A Trench and Field Stop IGBTJJT50N65UHKey performance:TO-3P V =650VCE I =50A@T =100C C V =1.9VCE(sat)Features: Trench and field-stop technology.GC Easy parallel switching capability.EBenefits: High efficiency for inverters. High ruggedness performance. RoHS compliant.Applications: PFC applications Welding machin

 6.1. Size:4943K  jiejie micro
 jjt50n65le.pdf pdf_icon

JJT50N65UE

650V 50A Trench and Field Stop IGBTJJT50N65LEKey performance: V =650VCETO-247 I =50A@T =100C C V =1.7VCE(sat)Features: Trench and field-stop technology. Easy parallel switching capability.GCEBenefits: High ruggedness performance. RoHS compliant.Applications: Inducting heating Resonant converters Microwave ovensPackag

 6.2. Size:4257K  jiejie micro
 jjt50n65he.pdf pdf_icon

JJT50N65UE

650V 50A Trench and Field Stop IGBTJJT50N65HEKey performance: V =650VCETO-247 I =50A@T =100C C V =1.8VCE(sat)Features: Trench and field-stop technology. Easy parallel switching capability.GCEBenefits: High efficiency for inverters. High ruggedness performance. RoHS compliant.Applications: PFC applications Uninterruptib

MOSTRAR MÁS

Otros transistores... JJT10N65SC , JJT10N65SCD , JJT10N65SGD , JJT10N65SS , JJT10N65ST , JJT120N75SA , JJT50N65HE , JJT50N65LE , RJP30E2DPP-M0 , JJT50N65UH , , , , , , , .

 

 
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