JJT50N65UE Todos los transistores

 

JJT50N65UE IGBT Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: JJT50N65UE

Tipo de transistor: IGBT

Polaridad de transistor: N

ESPECIFICACIONES TECNICAS

Pcⓘ - Máxima potencia disipada: 312 W

|Vce|ⓘ - Tensión máxima colector-emisor: 650 V

|Vge|ⓘ - Tensión máxima puerta-emisor: 20 V

|Ic|ⓘ - Colector de Corriente Continua a 25℃: 100 A

Tjⓘ - Temperatura máxima de unión: 175 ℃

CARACTERÍSTICAS ELÉCTRICAS

|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 1.9 V @25℃

trⓘ - Tiempo de subida, typ: 81 nS

Coesⓘ - Capacitancia de salida, typ: 136 pF

Encapsulados: TO247

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JJT50N65UE datasheet

 ..1. Size:3693K  jiejie micro
 jjt50n65ue.pdf pdf_icon

JJT50N65UE

650V 50A Trench and Field Stop IGBT JJT50N65UE Key performance V =650V CE TO-247 I =50A@T =100 C C V =1.9V CE(sat) Features Trench and field-stop technology. Easy parallel switching capability. G C E Benefits High efficiency for inverters. High ruggedness performance. RoHS compliant. Applications PFC applications Welding machi

 5.1. Size:3697K  jiejie micro
 jjt50n65uh.pdf pdf_icon

JJT50N65UE

650V 50A Trench and Field Stop IGBT JJT50N65UH Key performance TO-3P V =650V CE I =50A@T =100 C C V =1.9V CE(sat) Features Trench and field-stop technology. G C Easy parallel switching capability. E Benefits High efficiency for inverters. High ruggedness performance. RoHS compliant. Applications PFC applications Welding machin

 6.1. Size:4943K  jiejie micro
 jjt50n65le.pdf pdf_icon

JJT50N65UE

650V 50A Trench and Field Stop IGBT JJT50N65LE Key performance V =650V CE TO-247 I =50A@T =100 C C V =1.7V CE(sat) Features Trench and field-stop technology. Easy parallel switching capability. G C E Benefits High ruggedness performance. RoHS compliant. Applications Inducting heating Resonant converters Microwave ovens Packag

 6.2. Size:4257K  jiejie micro
 jjt50n65he.pdf pdf_icon

JJT50N65UE

650V 50A Trench and Field Stop IGBT JJT50N65HE Key performance V =650V CE TO-247 I =50A@T =100 C C V =1.8V CE(sat) Features Trench and field-stop technology. Easy parallel switching capability. G C E Benefits High efficiency for inverters. High ruggedness performance. RoHS compliant. Applications PFC applications Uninterruptib

MOSTRAR MÁS

Otros transistores... JJT10N65SC , JJT10N65SCD , JJT10N65SGD , JJT10N65SS , JJT10N65ST , JJT120N75SA , JJT50N65HE , JJT50N65LE , SGT50T65FD1PT , JJT50N65UH , JJT15N120SE , JJT15N65SC , JJT15N65SG , JJT15N65SS , JJT15N65SY , JJT6N65SC , JJT6N65SS .

History: JJT50N65LE | MMG600K170U6EN | MMG600K120U6HN | IHW30N110R3

 

 

 


 
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