All IGBT. JJT50N65UE Datasheet

 

JJT50N65UE Datasheet and Replacement


   Type Designator: JJT50N65UE
   Type: IGBT + Anti-Parallel Diode
   Marking Code: T5065UE
   Type of IGBT Channel: N
   Pc ⓘ - Maximum Power Dissipation: 312 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 650 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic| ⓘ - Maximum Collector Current: 100 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.9 V @25℃
   |VGEth|ⓘ - Maximum G-E Threshold Voltag: 5.6 V
   Tj ⓘ - Maximum Junction Temperature: 175 ℃
   tr ⓘ - Rise Time, typ: 81 nS
   Coesⓘ - Output Capacitance, typ: 136 pF
   Qg ⓘ - Total Gate Charge, typ: 158 nC
   Package: TO247
 

 JJT50N65UE substitution

   - IGBT ⓘ Cross-Reference Search

 

JJT50N65UE Datasheet (PDF)

 ..1. Size:3693K  jiejie micro
 jjt50n65ue.pdf pdf_icon

JJT50N65UE

650V 50A Trench and Field Stop IGBTJJT50N65UEKey performance: V =650VCETO-247 I =50A@T =100C C V =1.9VCE(sat)Features: Trench and field-stop technology. Easy parallel switching capability.GCEBenefits: High efficiency for inverters. High ruggedness performance. RoHS compliant.Applications: PFC applications Welding machi

 5.1. Size:3697K  jiejie micro
 jjt50n65uh.pdf pdf_icon

JJT50N65UE

650V 50A Trench and Field Stop IGBTJJT50N65UHKey performance:TO-3P V =650VCE I =50A@T =100C C V =1.9VCE(sat)Features: Trench and field-stop technology.GC Easy parallel switching capability.EBenefits: High efficiency for inverters. High ruggedness performance. RoHS compliant.Applications: PFC applications Welding machin

 6.1. Size:4943K  jiejie micro
 jjt50n65le.pdf pdf_icon

JJT50N65UE

650V 50A Trench and Field Stop IGBTJJT50N65LEKey performance: V =650VCETO-247 I =50A@T =100C C V =1.7VCE(sat)Features: Trench and field-stop technology. Easy parallel switching capability.GCEBenefits: High ruggedness performance. RoHS compliant.Applications: Inducting heating Resonant converters Microwave ovensPackag

 6.2. Size:4257K  jiejie micro
 jjt50n65he.pdf pdf_icon

JJT50N65UE

650V 50A Trench and Field Stop IGBTJJT50N65HEKey performance: V =650VCETO-247 I =50A@T =100C C V =1.8VCE(sat)Features: Trench and field-stop technology. Easy parallel switching capability.GCEBenefits: High efficiency for inverters. High ruggedness performance. RoHS compliant.Applications: PFC applications Uninterruptib

SHOW MORE

Datasheet: APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W , IRG4MC50U , GT30F131 , AOB10B60D , AOK10B60D , AOT10B60D , NGB8207AB , NGB8207B , AOB15B60D , IRGSL8B60K , AOK15B60D .

Keywords - JJT50N65UE transistor datasheet

 JJT50N65UE cross reference
 JJT50N65UE equivalent finder
 JJT50N65UE lookup
 JJT50N65UE substitution
 JJT50N65UE replacement

 

 
Back to Top

 


 
.