JJT15N120SE Todos los transistores

 

JJT15N120SE - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: JJT15N120SE
   Tipo de transistor: IGBT
   Polaridad de transistor: N

ESPECIFICACIONES TECNICAS


   Pcⓘ - Máxima potencia disipada: 375 W
   |Vce|ⓘ - Tensión máxima colector-emisor: 1200 V
   |Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
   |Ic|ⓘ - Colector de Corriente Continua a 25℃: 30 A
   |VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 1.7 V @25℃
   Tjⓘ - Temperatura máxima de unión: 175 ℃
   trⓘ - Tiempo de subida, typ: 34 nS
   Coesⓘ - Capacitancia de salida, typ: 58 pF
   Paquete / Cubierta: TO247
 

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JJT15N120SE Datasheet (PDF)

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JJT15N120SE

1200V 15A Trench and Field Stop IGBTJJT15N120SEKey performance: V =1200VCETO-247 I =15A@T =100C C V =1.7VCE(sat)Features: Trench and field-stop technology Low collector to emitter saturation voltageGC Easy parallel switching capabilityE Short circuit withstands time 10s High ruggedness performance RoHS compliantApplications

 8.1. Size:3844K  jiejie micro
 jjt15n65ss.pdf pdf_icon

JJT15N120SE

650V 15A Trench and Field Stop IGBTJJT15N65SSKey performance: V =650VCETO-220F I =15A@T =100C C V =1.6 VCE(sat)Features: High ruggedness performance. 10s short circuit capability.GCE Positive V temperature coefficient.CE (sat) High efficiency for motor control. Excellent current sharing in parallel operation. RoHS compliant

 8.2. Size:4006K  jiejie micro
 jjt15n65sg.pdf pdf_icon

JJT15N120SE

650V 15A Trench and Field Stop IGBTJJT15N65SGKey performance:TO-220A V =650VCE I =15A@T =100C C V =1.6 VCE(sat)Features: High ruggedness performance.GC 10s short circuit capability.E Positive V temperature coefficient.CE (sat) High efficiency for motor control. Excellent current sharing in parallel operation. RoHS compliant

 8.3. Size:3503K  jiejie micro
 jjt15n65sc.pdf pdf_icon

JJT15N120SE

650V 15A Trench and Field Stop IGBTJJT15N65SCKey performance:TO-263 V =650VCE I =15A@T =100C C V =1.6 VCE(sat)CFeatures:G High ruggedness performance.E 10s short circuit capability. Positive V temperature coefficient.CE (sat) High efficiency for motor control. Excellent current sharing in parallel operation. RoHS compliant.

MOSTRAR MÁS

Otros transistores... JJT10N65SGD , JJT10N65SS , JJT10N65ST , JJT120N75SA , JJT50N65HE , JJT50N65LE , JJT50N65UE , JJT50N65UH , SGT40N60NPFDPN , JJT15N65SC , JJT15N65SG , JJT15N65SS , JJT15N65SY , JJT6N65SC , JJT6N65SS , JJT6N65ST , JJT6N65STD .

 

 
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