JJT15N120SE - аналоги, параметры транзистора - Справочник транзисторов

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1200V 15A Trench and Field Stop IGBT JJT15N120SE Key performance V =1200V CE TO-247 I =15A@T =100 C C V =1.7V CE(sat) Features Trench and field-stop technology Low collector to emitter saturation voltage G C Easy parallel switching capability E Short circuit withstands time 10 s High ruggedness performance RoHS compliant Applications

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650V 15A Trench and Field Stop IGBT JJT15N65SS Key performance V =650V CE TO-220F I =15A@T =100 C C V =1.6 V CE(sat) Features High ruggedness performance. 10 s short circuit capability. G C E Positive V temperature coefficient. CE (sat) High efficiency for motor control. Excellent current sharing in parallel operation. RoHS compliant

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650V 15A Trench and Field Stop IGBT JJT15N65SG Key performance TO-220A V =650V CE I =15A@T =100 C C V =1.6 V CE(sat) Features High ruggedness performance. G C 10 s short circuit capability. E Positive V temperature coefficient. CE (sat) High efficiency for motor control. Excellent current sharing in parallel operation. RoHS compliant

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650V 15A Trench and Field Stop IGBT JJT15N65SC Key performance TO-263 V =650V CE I =15A@T =100 C C V =1.6 V CE(sat) C Features G High ruggedness performance. E 10 s short circuit capability. Positive V temperature coefficient. CE (sat) High efficiency for motor control. Excellent current sharing in parallel operation. RoHS compliant.