JJT75N120SA Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: JJT75N120SA  📄📄 

Tipo de transistor: IGBT

Polaridad de transistor: N

ESPECIFICACIONES TECNICAS

Pcⓘ - Máxima potencia disipada: 882 W

|Vce|ⓘ - Tensión máxima colector-emisor: 1200 V

|Vge|ⓘ - Tensión máxima puerta-emisor: 20 V

|Ic|ⓘ - Colector de Corriente Continua a 25℃: 150 A

Tjⓘ - Temperatura máxima de unión: 175 ℃

CARACTERÍSTICAS ELÉCTRICAS

|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 1.7 V @25℃

trⓘ - Tiempo de subida, typ: 186 nS

Coesⓘ - Capacitancia de salida, typ: 350 pF

Encapsulados: TO247PLUS

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JJT75N120SA datasheet

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JJT75N120SA

1200V 75A Trench and Field Stop IGBT JJT75N120SA Key performance TO-247PLUS V =1200V CE I =75A@T =100 C C V =1.7V CE(sat) Features G Trench and field-stop technology C E Easy parallel switching capability Short circuit withstand time 10 s Low V CEsat High ruggedness performance RoHS compliant Applications servo drive Inve

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JJT75N120SA

650V 75A Trench and Field Stop IGBT JJT75N65HCN Key performance TO-263 V =650V CE I =75A@T =100 C C V =1.8V CE(sat) C Features Trench and field-stop technology. G Easy parallel switching capability. E Benefits High efficiency for inverters. High ruggedness performance. RoHS compliant. Applications Hair removal device Flash lig

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JJT75N120SA

650V 75A Trench and Field Stop IGBT JJT75N65HE Key performance V =650V CE TO-247 I =75A@T =100 C C V =1.8V CE(sat) Features Trench and field-stop technology. Easy parallel switching capability. G C E Benefits High efficiency for inverters. High ruggedness performance. RoHS compliant. Applications PFC applications Uninterruptib

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