JJT75N120SA - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: JJT75N120SA
Tipo de transistor: IGBT + Diode
Código de marcado: T75120SA
Polaridad de transistor: N
ESPECIFICACIONES TECNICAS
Pcⓘ - Máxima potencia disipada: 882 W
|Vce|ⓘ - Tensión máxima colector-emisor: 1200 V
|Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
|Ic|ⓘ - Colector de Corriente Continua a 25℃: 150 A
|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 1.7 V @25℃
|VGEth|ⓘ - Tensión máxima de puerta-umbral: 6 V
Tjⓘ - Temperatura máxima de unión: 175 ℃
trⓘ - Tiempo de subida, typ: 186 nS
Coesⓘ - Capacitancia de salida, typ: 350 pF
Qgⓘ - Carga total de la puerta, typ: 420 nC
Paquete / Cubierta: TO247PLUS
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JJT75N120SA Datasheet (PDF)
jjt75n120sa.pdf
1200V 75A Trench and Field Stop IGBTJJT75N120SAKey performance:TO-247PLUS V =1200VCE I =75A@T =100C C V =1.7VCE(sat)Features:G Trench and field-stop technologyCE Easy parallel switching capability Short circuit withstand time 10s Low VCEsat High ruggedness performance RoHS compliantApplications: servo drive Inve
jjt75n65hcn.pdf
650V 75A Trench and Field Stop IGBTJJT75N65HCNKey performance:TO-263 V =650VCE I =75A@T =100C C V =1.8VCE(sat)CFeatures: Trench and field-stop technology.G Easy parallel switching capability.EBenefits: High efficiency for inverters. High ruggedness performance. RoHS compliant.Applications: Hair removal device Flash lig
jjt75n65he.pdf
650V 75A Trench and Field Stop IGBTJJT75N65HEKey performance: V =650VCETO-247 I =75A@T =100C C V =1.8VCE(sat)Features: Trench and field-stop technology. Easy parallel switching capability.GCEBenefits: High efficiency for inverters. High ruggedness performance. RoHS compliant.Applications: PFC applications Uninterruptib
Otros transistores... JJT15N65SC , JJT15N65SG , JJT15N65SS , JJT15N65SY , JJT6N65SC , JJT6N65SS , JJT6N65ST , JJT6N65STD , SGT50T65FD1PN , JJT75N65HCN , JJT75N65HE , JJT20N65SC , JJT20N65SE , JJT20N65SS , JJT20N65SY , JJT25N120SE , JJT25N135UE .
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