JJT75N65HE Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: JJT75N65HE 📄📄
Tipo de transistor: IGBT
Polaridad de transistor: N
ESPECIFICACIONES TECNICAS
Pcⓘ - Máxima potencia disipada: 535 W
|Vce|ⓘ - Tensión máxima colector-emisor: 650 V
|Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
|Ic|ⓘ - Colector de Corriente Continua a 25℃: 150 A
Tjⓘ - Temperatura máxima de unión: 175 ℃
CARACTERÍSTICAS ELÉCTRICAS
|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 1.8 V @25℃
trⓘ - Tiempo de subida, typ: 132 nS
Coesⓘ - Capacitancia de salida, typ: 205 pF
Encapsulados: TO247
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JJT75N65HE datasheet
jjt75n65he.pdf
650V 75A Trench and Field Stop IGBT JJT75N65HE Key performance V =650V CE TO-247 I =75A@T =100 C C V =1.8V CE(sat) Features Trench and field-stop technology. Easy parallel switching capability. G C E Benefits High efficiency for inverters. High ruggedness performance. RoHS compliant. Applications PFC applications Uninterruptib
jjt75n65hcn.pdf
650V 75A Trench and Field Stop IGBT JJT75N65HCN Key performance TO-263 V =650V CE I =75A@T =100 C C V =1.8V CE(sat) C Features Trench and field-stop technology. G Easy parallel switching capability. E Benefits High efficiency for inverters. High ruggedness performance. RoHS compliant. Applications Hair removal device Flash lig
jjt75n120sa.pdf
1200V 75A Trench and Field Stop IGBT JJT75N120SA Key performance TO-247PLUS V =1200V CE I =75A@T =100 C C V =1.7V CE(sat) Features G Trench and field-stop technology C E Easy parallel switching capability Short circuit withstand time 10 s Low V CEsat High ruggedness performance RoHS compliant Applications servo drive Inve
Otros transistores... JJT15N65SS, JJT15N65SY, JJT6N65SC, JJT6N65SS, JJT6N65ST, JJT6N65STD, JJT75N120SA, JJT75N65HCN, JT075N065WED, JJT20N65SC, JJT20N65SE, JJT20N65SS, JJT20N65SY, JJT25N120SE, JJT25N135UE, JJT60N65HE, JJT60N65UE
History: FGP20N60UFD
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