All IGBT. JJT75N65HE Datasheet

 

JJT75N65HE Datasheet and Replacement


   Type Designator: JJT75N65HE
   Type: IGBT + Anti-Parallel Diode
   Marking Code: T7565HE
   Type of IGBT Channel: N
   Pc ⓘ - Maximum Power Dissipation: 535 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 650 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic| ⓘ - Maximum Collector Current: 150 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.8 V @25℃
   |VGEth|ⓘ - Maximum G-E Threshold Voltag: 5.6 V
   Tj ⓘ - Maximum Junction Temperature: 175 ℃
   tr ⓘ - Rise Time, typ: 132 nS
   Coesⓘ - Output Capacitance, typ: 205 pF
   Qg ⓘ - Total Gate Charge, typ: 130 nC
   Package: TO247
 

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JJT75N65HE Datasheet (PDF)

 ..1. Size:3926K  jiejie micro
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JJT75N65HE

650V 75A Trench and Field Stop IGBTJJT75N65HEKey performance: V =650VCETO-247 I =75A@T =100C C V =1.8VCE(sat)Features: Trench and field-stop technology. Easy parallel switching capability.GCEBenefits: High efficiency for inverters. High ruggedness performance. RoHS compliant.Applications: PFC applications Uninterruptib

 5.1. Size:3940K  jiejie micro
 jjt75n65hcn.pdf pdf_icon

JJT75N65HE

650V 75A Trench and Field Stop IGBTJJT75N65HCNKey performance:TO-263 V =650VCE I =75A@T =100C C V =1.8VCE(sat)CFeatures: Trench and field-stop technology.G Easy parallel switching capability.EBenefits: High efficiency for inverters. High ruggedness performance. RoHS compliant.Applications: Hair removal device Flash lig

 8.1. Size:3583K  jiejie micro
 jjt75n120sa.pdf pdf_icon

JJT75N65HE

1200V 75A Trench and Field Stop IGBTJJT75N120SAKey performance:TO-247PLUS V =1200VCE I =75A@T =100C C V =1.7VCE(sat)Features:G Trench and field-stop technologyCE Easy parallel switching capability Short circuit withstand time 10s Low VCEsat High ruggedness performance RoHS compliantApplications: servo drive Inve

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