JJT20N65SE Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: JJT20N65SE 📄📄
Tipo de transistor: IGBT
Polaridad de transistor: N
ESPECIFICACIONES TECNICAS
Pcⓘ - Máxima potencia disipada: 187 W
|Vce|ⓘ - Tensión máxima colector-emisor: 650 V
|Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
|Ic|ⓘ - Colector de Corriente Continua a 25℃: 40 A
Tjⓘ - Temperatura máxima de unión: 175 ℃
CARACTERÍSTICAS ELÉCTRICAS
|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 1.6 V @25℃
trⓘ - Tiempo de subida, typ: 23 nS
Coesⓘ - Capacitancia de salida, typ: 72 pF
Encapsulados: TO247
📄📄 Copiar
Búsqueda de reemplazo de JJT20N65SE IGBT
- Selecciónⓘ de transistores por parámetros
JJT20N65SE datasheet
jjt20n65se.pdf
650V 20A Trench and Field Stop IGBT JJT20N65SE Key performance TO-247 V =650V CE I =20A@T =100 C C V =1.6 V CE(sat) Features G High ruggedness performance. C E 10 s short circuit capability. Positive V temperature coefficient. CE (sat) High efficiency for motor control. Excellent current sharing in parallel operation. RoHS compliant.
jjt20n65sc.pdf
650V 20A Trench and Field Stop IGBT JJT20N65SC Key performance TO-263 V =650V CE I =20A@T =100 C C V =1.6 V CE(sat) C Features G High ruggedness performance. E 10 s short circuit capability. Positive V temperature coefficient. CE (sat) High efficiency for motor control. Excellent current sharing in parallel operation. RoHS compliant.
jjt20n65ss.pdf
650V 20A Trench and Field Stop IGBT JJT20N65SS Key performance V =650V CE TO-220F I =20A@T =100 C C V =1.6 V CE(sat) Features High ruggedness performance. 10 s short circuit capability. G C E Positive V temperature coefficient. CE (sat) High efficiency for motor control. Excellent current sharing in parallel operation. RoHS compliant
jjt20n65sy.pdf
650V 20A Trench and Field Stop IGBT JJT20N65SY Key performance TO-220 V =650V CE I =20A@T =100 C C V =1.6 V CE(sat) Features High ruggedness performance. G C 10 s short circuit capability. E Positive V temperature coefficient. CE (sat) High efficiency for motor control. Excellent current sharing in parallel operation. RoHS compliant.
Otros transistores... JJT6N65SC, JJT6N65SS, JJT6N65ST, JJT6N65STD, JJT75N120SA, JJT75N65HCN, JJT75N65HE, JJT20N65SC, IKW75N60T, JJT20N65SS, JJT20N65SY, JJT25N120SE, JJT25N135UE, JJT60N65HE, JJT60N65UE, JJT60N65UH, JJT40N120UE
History: IKP28N65ES5 | APTGF330A60D3 | IKY50N120CH3
🌐 : EN ES РУ
Liste
Recientemente añadidas las descripciónes de los transistores
IGBT: JJT40N120SE | JJT40N120HE | JJT30N65UE | JJT30N65SY | JJT30N65SS | JJT30N65SE | JJT40N65UH | JJT40N65UE | JJT40N65LE | JJT40N65HE | JJT40N135UE
Popular searches
ecg123a | irfp360 | bc108 equivalent | irfp4568 | mj15004 | ksc2073 | nte102a | tip31cg




