JJT30N65SY Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: JJT30N65SY  📄📄 

Tipo de transistor: IGBT

Polaridad de transistor: N

ESPECIFICACIONES TECNICAS

Pcⓘ - Máxima potencia disipada: 187 W

|Vce|ⓘ - Tensión máxima colector-emisor: 650 V

|Vge|ⓘ - Tensión máxima puerta-emisor: 20 V

|Ic|ⓘ - Colector de Corriente Continua a 25℃: 60 A

Tjⓘ - Temperatura máxima de unión: 175 ℃

CARACTERÍSTICAS ELÉCTRICAS

|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 1.7 V @25℃

trⓘ - Tiempo de subida, typ: 39 nS

Coesⓘ - Capacitancia de salida, typ: 100 pF

Encapsulados: TO220

  📄📄 Copiar 

 Búsqueda de reemplazo de JJT30N65SY IGBT

- Selecciónⓘ de transistores por parámetros

 

JJT30N65SY datasheet

 ..1. Size:3377K  jiejie micro
jjt30n65sy.pdf pdf_icon

JJT30N65SY

650V 30A Trench and Field Stop IGBT JJT30N65SY Key performance TO-220 V =650V CE I =30A@T =100 C C V =1.7 V CE(sat) Features High ruggedness performance. G C 10 s short circuit capability. E Positive V temperature coefficient. CE (sat) High efficiency for motor control. Excellent current sharing in parallel operation. RoHS compliant.

 5.1. Size:3359K  jiejie micro
jjt30n65ss.pdf pdf_icon

JJT30N65SY

650V 30A Trench and Field Stop IGBT JJT30N65SS Key performance V =650V CE TO-220F I =30A@T =100 C C V =1.7 V CE(sat) Features High ruggedness performance. 10 s short circuit capability. G C E Positive V temperature coefficient. CE (sat) High efficiency for motor control. Excellent current sharing in parallel operation. RoHS compliant

 5.2. Size:3803K  jiejie micro
jjt30n65se.pdf pdf_icon

JJT30N65SY

650V 30A Trench and Field Stop IGBT JJT30N65SE Key performance V =650V CE TO-247 I =30A@T =100 C C V =1.7 V CE(sat) Features High ruggedness performance. 10 s short circuit capability. G C Positive V temperature coefficient. CE (sat) E High efficiency for motor control. Excellent current sharing in parallel operation. RoHS compliant.

 6.1. Size:2990K  jiejie micro
jjt30n65ue.pdf pdf_icon

JJT30N65SY

650V 30A Trench and Field Stop IGBT JJT30N65UE Key performance V =650V CE TO-247 I =30A@T =100 C C V =1.8V CE(sat) Features Trench and field-stop technology. Easy parallel switching capability. G C E Benefits High efficiency for inverters. High ruggedness performance. RoHS compliant. Applications PFC applications Welding machi

Otros transistores... JJT40N120UE, JJT40N135UE, JJT40N65HE, JJT40N65LE, JJT40N65UE, JJT40N65UH, JJT30N65SE, JJT30N65SS, IRGP4063D