JJT30N65SY Todos los transistores

 

JJT30N65SY IGBT Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: JJT30N65SY
   Tipo de transistor: IGBT
   Polaridad de transistor: N

ESPECIFICACIONES TECNICAS


   Pcⓘ - Máxima potencia disipada: 187 W
   |Vce|ⓘ - Tensión máxima colector-emisor: 650 V
   |Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
   |Ic|ⓘ - Colector de Corriente Continua a 25℃: 60 A
   |VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 1.7 V @25℃
   Tjⓘ - Temperatura máxima de unión: 175 ℃
   trⓘ - Tiempo de subida, typ: 39 nS
   Coesⓘ - Capacitancia de salida, typ: 100 pF
   Paquete / Cubierta: TO220
 

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JJT30N65SY datasheet

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 jjt30n65sy.pdf pdf_icon

JJT30N65SY

650V 30A Trench and Field Stop IGBT JJT30N65SY Key performance TO-220 V =650V CE I =30A@T =100 C C V =1.7 V CE(sat) Features High ruggedness performance. G C 10 s short circuit capability. E Positive V temperature coefficient. CE (sat) High efficiency for motor control. Excellent current sharing in parallel operation. RoHS compliant.

 5.1. Size:3359K  jiejie micro
 jjt30n65ss.pdf pdf_icon

JJT30N65SY

650V 30A Trench and Field Stop IGBT JJT30N65SS Key performance V =650V CE TO-220F I =30A@T =100 C C V =1.7 V CE(sat) Features High ruggedness performance. 10 s short circuit capability. G C E Positive V temperature coefficient. CE (sat) High efficiency for motor control. Excellent current sharing in parallel operation. RoHS compliant

 5.2. Size:3803K  jiejie micro
 jjt30n65se.pdf pdf_icon

JJT30N65SY

650V 30A Trench and Field Stop IGBT JJT30N65SE Key performance V =650V CE TO-247 I =30A@T =100 C C V =1.7 V CE(sat) Features High ruggedness performance. 10 s short circuit capability. G C Positive V temperature coefficient. CE (sat) E High efficiency for motor control. Excellent current sharing in parallel operation. RoHS compliant.

 6.1. Size:2990K  jiejie micro
 jjt30n65ue.pdf pdf_icon

JJT30N65SY

650V 30A Trench and Field Stop IGBT JJT30N65UE Key performance V =650V CE TO-247 I =30A@T =100 C C V =1.8V CE(sat) Features Trench and field-stop technology. Easy parallel switching capability. G C E Benefits High efficiency for inverters. High ruggedness performance. RoHS compliant. Applications PFC applications Welding machi

MOSTRAR MÁS

Otros transistores... JJT40N120UE , JJT40N135UE , JJT40N65HE , JJT40N65LE , JJT40N65UE , JJT40N65UH , JJT30N65SE , JJT30N65SS , FGPF4633 , JJT30N65UE , JJT40N120HE , JJT40N120SE , , , , , .

 

 

 


 
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