JJT30N65SY Todos los transistores

 

JJT30N65SY - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: JJT30N65SY
   Tipo de transistor: IGBT + Diode
   Código de marcado: T3065SY
   Polaridad de transistor: N

ESPECIFICACIONES TECNICAS


   Pcⓘ - Máxima potencia disipada: 187 W
   |Vce|ⓘ - Tensión máxima colector-emisor: 650 V
   |Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
   |Ic|ⓘ - Colector de Corriente Continua a 25℃: 60 A
   |VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 1.7 V @25℃
   |VGEth|ⓘ - Tensión máxima de puerta-umbral: 5.9 V
   Tjⓘ - Temperatura máxima de unión: 175 ℃
   trⓘ - Tiempo de subida, typ: 39 nS
   Coesⓘ - Capacitancia de salida, typ: 100 pF
   Qgⓘ - Carga total de la puerta, typ: 103 nC
   Paquete / Cubierta: TO220
 

 Búsqueda de reemplazo de JJT30N65SY IGBT

   - Selección ⓘ de transistores por parámetros

 

JJT30N65SY Datasheet (PDF)

 ..1. Size:3377K  jiejie micro
jjt30n65sy.pdf pdf_icon

JJT30N65SY

650V 30A Trench and Field Stop IGBTJJT30N65SYKey performance:TO-220 V =650VCE I =30A@T =100C C V =1.7 VCE(sat)Features: High ruggedness performance.GC 10s short circuit capability.E Positive V temperature coefficient.CE (sat) High efficiency for motor control. Excellent current sharing in parallel operation. RoHS compliant.

 5.1. Size:3359K  jiejie micro
jjt30n65ss.pdf pdf_icon

JJT30N65SY

650V 30A Trench and Field Stop IGBTJJT30N65SSKey performance: V =650VCETO-220F I =30A@T =100C C V =1.7 VCE(sat)Features: High ruggedness performance. 10s short circuit capability.GCE Positive V temperature coefficient.CE (sat) High efficiency for motor control. Excellent current sharing in parallel operation. RoHS compliant

 5.2. Size:3803K  jiejie micro
jjt30n65se.pdf pdf_icon

JJT30N65SY

650V 30A Trench and Field Stop IGBTJJT30N65SEKey performance: V =650VCETO-247 I =30A@T =100C C V =1.7 VCE(sat)Features: High ruggedness performance. 10s short circuit capability.GC Positive V temperature coefficient.CE (sat)E High efficiency for motor control. Excellent current sharing in parallel operation. RoHS compliant.

 6.1. Size:2990K  jiejie micro
jjt30n65ue.pdf pdf_icon

JJT30N65SY

650V 30A Trench and Field Stop IGBTJJT30N65UEKey performance: V =650VCETO-247 I =30A@T =100C C V =1.8VCE(sat)Features: Trench and field-stop technology. Easy parallel switching capability.GCEBenefits: High efficiency for inverters. High ruggedness performance. RoHS compliant.Applications: PFC applications Welding machi

Otros transistores... AP05G120SW-HF , TSG10N120CN , AP05G120NSW-HF , AP20GT60SW , AP20GT60W , CI15T60 , MMIX4B12N300 , NGD8205A , CRG60T60AN3H , IXYP8N90C3D1 , APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W .

 

 
Back to Top

 


JJT30N65SY
  JJT30N65SY
  JJT30N65SY
 

social 

Liste

Recientemente añadidas las descripciónes de los transistores

IGBT: JJT40N120SE | JJT40N120HE | JJT30N65UE | JJT30N65SY | JJT30N65SS | JJT30N65SE | JJT40N65UH | JJT40N65UE | JJT40N65LE | JJT40N65HE | JJT40N135UE

 

 

 
Back to Top

 

Popular searches

17n80c3 | bc107 transistor | rjp63g4 datasheet | 2sc1115 | c3998 transistor | 2sa679 | 2sc3181 | 2sb324

 


 
.