IXSH15N120AU1 IGBT Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: IXSH15N120AU1
Tipo de transistor: IGBT
Polaridad de transistor: N
ESPECIFICACIONES TECNICAS
Pcⓘ - Máxima potencia disipada: 150 W
|Vce|ⓘ - Tensión máxima colector-emisor: 1200 V
|Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
|Ic|ⓘ - Colector de Corriente Continua a 25℃: 30 A
Tjⓘ - Temperatura máxima de unión: 150 ℃
CARACTERÍSTICAS ELÉCTRICAS
|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 4(max) V @25℃
trⓘ - Tiempo de subida, typ: 200 nS
Coesⓘ - Capacitancia de salida, typ: 160 pF
Encapsulados: TO247
Búsqueda de reemplazo de IXSH15N120AU1 IGBT
- Selección ⓘ de transistores por parámetros
IXSH15N120AU1 datasheet
ixsh15n120au1.pdf
IXSH15N120AU1 PRELIMINARY DATA SHEET IGBT with Diode IC25 = 30 A "S" Series - Improved SCSOA Capability VCES = 1200 V C VCE(sat) = 4.0 V G E Symbol Test Conditions Maximum Ratings TO-247AD VCES TJ = 25 C to 150 C 1200 V VCGR TJ = 25 C to 150 C; RGE = 1 M 1200 V C VGES Continuous 20 V G E VGEM Transient 30 V IC25 TC = 25 C 30 A Features IC90 TC = 90 C 15 A
ixsh15n120b ixst15n120b.pdf
IXSH 15N120B HIGH Voltage IGBT IC25 = 30 A IXST 15N120B VCES = 1200 V "S" Series - Improved SCSOA Capability VCE(sat) = 3.4 V Preliminary data Symbol Test Conditions Maximum Ratings TO-247 AD (IXSH) VCES TJ = 25 C to 150 C 1200 V VCGR TJ = 25 C to 150 C; RGE = 1 MW 1200 V VGES Continuous 20 V (TAB) G VGEM Transient 30 V C E IC25 TC = 25 C30 A IC90 TC = 90 C15 A TO-2
ixsh15n120b.pdf
IXSH 15N120B HIGH Voltage IGBT IC25 = 30 A IXST 15N120B VCES = 1200 V "S" Series - Improved SCSOA Capability VCE(sat) = 3.4 V Preliminary data Symbol Test Conditions Maximum Ratings TO-247 AD (IXSH) VCES TJ = 25 C to 150 C 1200 V VCGR TJ = 25 C to 150 C; RGE = 1 MW 1200 V VGES Continuous 20 V (TAB) G VGEM Transient 30 V C E IC25 TC = 25 C30 A IC90 TC = 90 C15 A TO-2
ixsh15n120bd1.pdf
IXSH 15N120BD1 HIGH Voltage IGBT IC25 = 30 A IXST 15N120BD1 with Diode VCES = 1200 V "S" Series - Improved SCSOA Capability VCE(sat) = 3.4 V Preliminary data Symbol Test Conditions Maximum Ratings TO-247 AD (IXSH) VCES TJ = 25 C to 150 C 1200 V VCGR TJ = 25 C to 150 C; RGE = 1 MW 1200 V (TAB) VGES Continuous 20 V G C VGEM Transient 30 V E IC25 TC = 25 C30 A TO-268 (
Otros transistores... IXGT50N60B , IXGT60N60 , IXGX120N60B , IXGX50N60AU1 , IXSA12N60AU1 , IXSA16N60 , IXSH10N120A , IXSH10N120AU1 , GT30G124 , IXSH15N120B , IXSH16N60U1 , IXSH20N60AU1 , IXSH20N60U1 , IXSH24N60 , IXSH24N60A , IXSH24N60AU1 , IXSH24N60U1 .
History: IXSH10N120AU1 | IRGP4620D | IRGB4620D | OM6517SA
History: IXSH10N120AU1 | IRGP4620D | IRGB4620D | OM6517SA
🌐 : EN ES РУ
Liste
Recientemente añadidas las descripciónes de los transistores
IGBT: JJT40N120SE | JJT40N120HE | JJT30N65UE | JJT30N65SY | JJT30N65SS | JJT30N65SE | JJT40N65UH | JJT40N65UE | JJT40N65LE | JJT40N65HE | JJT40N135UE
Popular searches
c3856 | 30100 transistor | 2sc1675 | k117 transistor | 2sc2291 | bc139 | 2sc1398 | 2sd218