IXSH15N120AU1 Specs and Replacement
Type Designator: IXSH15N120AU1
Type: IGBT
Type of IGBT Channel: N
Absolute Maximum Ratings
Pc ⓘ - Maximum Power Dissipation: 150 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic| ⓘ - Maximum Collector Current: 30 A @25℃
Tj ⓘ - Maximum Junction Temperature: 150 ℃
Electrical Characteristics
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 4(max) V @25℃
tr ⓘ - Rise Time, typ: 200 nS
Coesⓘ - Output Capacitance, typ: 160 pF
Package: TO247
IXSH15N120AU1 Substitution - IGBT ⓘ Cross-Reference Search
IXSH15N120AU1 datasheet
ixsh15n120au1.pdf
IXSH15N120AU1 PRELIMINARY DATA SHEET IGBT with Diode IC25 = 30 A "S" Series - Improved SCSOA Capability VCES = 1200 V C VCE(sat) = 4.0 V G E Symbol Test Conditions Maximum Ratings TO-247AD VCES TJ = 25 C to 150 C 1200 V VCGR TJ = 25 C to 150 C; RGE = 1 M 1200 V C VGES Continuous 20 V G E VGEM Transient 30 V IC25 TC = 25 C 30 A Features IC90 TC = 90 C 15 A ... See More ⇒
ixsh15n120b ixst15n120b.pdf
IXSH 15N120B HIGH Voltage IGBT IC25 = 30 A IXST 15N120B VCES = 1200 V "S" Series - Improved SCSOA Capability VCE(sat) = 3.4 V Preliminary data Symbol Test Conditions Maximum Ratings TO-247 AD (IXSH) VCES TJ = 25 C to 150 C 1200 V VCGR TJ = 25 C to 150 C; RGE = 1 MW 1200 V VGES Continuous 20 V (TAB) G VGEM Transient 30 V C E IC25 TC = 25 C30 A IC90 TC = 90 C15 A TO-2... See More ⇒
ixsh15n120b.pdf
IXSH 15N120B HIGH Voltage IGBT IC25 = 30 A IXST 15N120B VCES = 1200 V "S" Series - Improved SCSOA Capability VCE(sat) = 3.4 V Preliminary data Symbol Test Conditions Maximum Ratings TO-247 AD (IXSH) VCES TJ = 25 C to 150 C 1200 V VCGR TJ = 25 C to 150 C; RGE = 1 MW 1200 V VGES Continuous 20 V (TAB) G VGEM Transient 30 V C E IC25 TC = 25 C30 A IC90 TC = 90 C15 A TO-2... See More ⇒
ixsh15n120bd1.pdf
IXSH 15N120BD1 HIGH Voltage IGBT IC25 = 30 A IXST 15N120BD1 with Diode VCES = 1200 V "S" Series - Improved SCSOA Capability VCE(sat) = 3.4 V Preliminary data Symbol Test Conditions Maximum Ratings TO-247 AD (IXSH) VCES TJ = 25 C to 150 C 1200 V VCGR TJ = 25 C to 150 C; RGE = 1 MW 1200 V (TAB) VGES Continuous 20 V G C VGEM Transient 30 V E IC25 TC = 25 C30 A TO-268 ( ... See More ⇒
Specs: IXGT50N60B, IXGT60N60, IXGX120N60B, IXGX50N60AU1, IXSA12N60AU1, IXSA16N60, IXSH10N120A, IXSH10N120AU1, GT30G124, IXSH15N120B, IXSH16N60U1, IXSH20N60AU1, IXSH20N60U1, IXSH24N60, IXSH24N60A, IXSH24N60AU1, IXSH24N60U1
Keywords - IXSH15N120AU1 transistor spec
IXSH15N120AU1 cross reference
IXSH15N120AU1 equivalent finder
IXSH15N120AU1 lookup
IXSH15N120AU1 substitution
IXSH15N120AU1 replacement
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