IGC07T120T8L Todos los transistores

 ..1. Size:71K  infineon
 igc07t120t8l.pdf

IGC07T120T8L IGBT4 Low Power Chip Features Recommended for 1200V Trench & Field stop technology low / medium power modules C low switching losses positive temperature coefficient Applications easy paralleling low / medium power drives Qualified according to JEDEC for target G applications E Chip Type VCE ICn1 ) Die Size Package IGC07T120T8L 1200V 4A 2

 4.1. Size:72K  infineon
 igc07t120t6l.pdf

IGC07T120T6L IGBT4 Low Power Chip Features 1200V Trench + Field stop technology This chip is used for C low switching losses low / medium power modules positive temperature coefficient easy paralleling Applications G low / medium power drives E Chip Type VCE ICn Die Size Package IGC07T120T6L 1200V 4A 2.54 x 2.72 mm2 sawn on foil MECHANICAL P

 8.1. Size:64K  infineon
 sigc07t60un.pdf

SIGC07T60UN High Speed IGBT Chip in NPT-technology C FEATURES This chip is used for low Eoff SKB06N60HS 600V NPT technology 100 m chip G Applications short circuit prove E Welding positive temperature coefficient PFC easy paralleling UPS Chip Type VCE ICn Die Size Package Ordering Code Q67050-A4220- SIGC07T60UN 60

 8.2. Size:75K  infineon
 sigc07t60snc.pdf

SIGC07T60SNC IGBT Chip in NPT-technology C FEATURES 600V NPT technology This chip is used for 100 m chip DuoPack SKP06N60 short circuit prove positive temperature coefficient G Applications E easy paralleling drives Chip Type VCE ICn Die Size Package Ordering Code Q67041-A4672- SIGC07T60SNC 600V 6A 2.6 x 2.6 mm2 sawn on foil A003 Q6

 8.3. Size:64K  infineon
 sigc07t60nc.pdf

SIGC07T60NC IGBT Chip in NPT-technology C FEATURES This chip is used for 600V NPT technology 100 m chip IGBT-Modules positive temperature coefficient easy paralleling G Applications E drives Chip Type VCE ICn Die Size Package Ordering Code Q67050-A4134- SIGC07T60NC 600V 6A 2.6 x 2.6 mm2 sawn on foil A001 MECHANICAL PARAMETER mm2 Ra