IGC07T120T8L IGBT. Datasheet pdf. Equivalent

IGC07T120T8LIGBT4 Low Power ChipFeatures: Recommended for: 1200V Trench & Field stop technology low / medium power modules C low switching losses positive temperature coefficientApplications: easy paralleling low / medium power drives Qualified according to JEDEC for targetGapplications EChip Type VCE ICn1 ) Die Size PackageIGC07T120T8L 1200V 4A 2

IGC07T120T6L IGBT4 Low Power Chip Features: 1200V Trench + Field stop technology This chip is used for:C low switching losses low / medium power modules positive temperature coefficient easy paralleling Applications: G low / medium power drives E Chip Type VCE ICn Die Size Package IGC07T120T6L 1200V 4A 2.54 x 2.72 mm2 sawn on foil MECHANICAL P

SIGC07T60UN High Speed IGBT Chip in NPT-technology CFEATURES: This chip is used for: low Eoff SKB06N60HS 600V NPT technology 100m chip GApplications: short circuit prove E Welding positive temperature coefficient PFC easy paralleling UPS Chip Type VCE ICn Die Size Package Ordering Code Q67050-A4220-SIGC07T60UN 60

SIGC07T60SNC IGBT Chip in NPT-technology CFEATURES: 600V NPT technology This chip is used for: 100m chip DuoPack SKP06N60 short circuit prove positive temperature coefficient GApplications: E easy paralleling drives Chip Type VCE ICn Die Size Package Ordering Code Q67041-A4672-SIGC07T60SNC 600V 6A 2.6 x 2.6 mm2 sawn on foil A003 Q6

SIGC07T60NC IGBT Chip in NPT-technology CFEATURES: This chip is used for: 600V NPT technology 100m chip IGBT-Modules positive temperature coefficient easy paralleling GApplications: E drives Chip Type VCE ICn Die Size Package Ordering Code Q67050-A4134-SIGC07T60NC 600V 6A 2.6 x 2.6 mm2 sawn on foil A001 MECHANICAL PARAMETER: mm2 Ra