IXSH35N100A IGBT Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: IXSH35N100A
Tipo de transistor: IGBT
Polaridad de transistor: N
ESPECIFICACIONES TECNICAS
Pcⓘ - Máxima potencia disipada: 300 W
|Vce|ⓘ - Tensión máxima colector-emisor: 1000 V
|Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
|Ic|ⓘ - Colector de Corriente Continua a 25℃: 70 A
Tjⓘ - Temperatura máxima de unión: 150 ℃
CARACTERÍSTICAS ELÉCTRICAS
|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 3.5(max) V @25℃
trⓘ - Tiempo de subida, typ: 150 nS
Coesⓘ - Capacitancia de salida, typ: 325 pF
Encapsulados: TO247
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IXSH35N100A datasheet
ixsh35n100a.pdf
High speed IGBT IXSH 35N100A VCES = 1000 V IXSM 35N100A IC25 = 70 A VCE(sat) = 3.5 V Short Circuit SOA Capability Symbol Test Conditions Maximum Ratings TO-247 AD (IXSH) VCES TJ = 25 C to 150 C 1000 V VCGR TJ = 25 C to 150 C; RGE = 1 MW 1000 V VGES Continuous 20 V G C VGEM Transient 30 V E IC25 TC = 25 C70 A IC90 TC = 90 C35 A TO-204 AE (IXSM) ICM TC = 25 C, 1 ms 140 A
ixsh35n120b.pdf
IXSH 35N120B IGBT IC25 = 70 A IXST 35N120B VCES = 1200 V VCE(sat) = 3.6 V "S" Series - Improved SCSOA Capability Symbol Test Conditions Maximum Ratings TO-247 AD (IXSH) VCES TJ = 25 C to 150 C 1200 V VCGR TJ = 25 C to 150 C; RGE = 1 M 1200 V (TAB) VGES Continuous 20 V G C VGEM Transient 30 V E IC25 TC = 25 C70 A TO-268 ( IXST) IC90 TC = 90 C35 A ICM TC = 25 C, 1
ixsh35n140a.pdf
VCES = 1400V High Voltage IXSH35N140A IC90 = 35A High speed IGBT VCE(sat) 4.0V Short Circuit SOA Capability tfi(typ) = 200ns TO-247 Symbol Test Conditions Maximum Ratings VCES TJ = 25 C to 150 C 1400 V G VCGR TJ = 25 C to 150 C, RGE = 1M 1400 V C E Tab VGES Continuous 20 V VGEM Transient 30 V G = Gate C = Collector IC25 TC = 25 C 70 A E = Emi
ixsh35n120b ixst35n120b.pdf
IXSH 35N120B IGBT IC25 = 70 A IXST 35N120B VCES = 1200 V VCE(sat) = 3.6 V "S" Series - Improved SCSOA Capability Symbol Test Conditions Maximum Ratings TO-247 AD (IXSH) VCES TJ = 25 C to 150 C 1200 V VCGR TJ = 25 C to 150 C; RGE = 1 M 1200 V (TAB) VGES Continuous 20 V G C VGEM Transient 30 V E IC25 TC = 25 C70 A TO-268 ( IXST) IC90 TC = 90 C35 A ICM TC = 25 C, 1
Otros transistores... IXSH30N60 , IXSH30N60A , IXSH30N60AU1 , IXSH30N60B , IXSH30N60BD1 , IXSH30N60C , IXSH30N60CD1 , IXSH30N60U1 , IRG4PC50U , IXSH35N120A , IXSH35N140A , IXSH40N60 , IXSH40N60A , IXSH40N60B , IXSH45N100 , IXSH45N120 , IXSH50N60B .
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