IXSH35N100A Spec and Replacement, IGBT Equivalent Finder, Cross Reference

IXSH35N100A Specs and Replacement

Type Designator: IXSH35N100A

Type: IGBT

Type of IGBT Channel: N

Absolute Maximum Ratings

Pc ⓘ - Maximum Power Dissipation: 300 W

|Vce|ⓘ - Maximum Collector-Emitter Voltage: 1000 V

|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V

|Ic| ⓘ - Maximum Collector Current: 70 A @25℃

Tj ⓘ - Maximum Junction Temperature: 150 ℃

Electrical Characteristics

|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 3.5(max) V @25℃

tr ⓘ - Rise Time, typ: 150 nS

Coesⓘ - Output Capacitance, typ: 325 pF

Package: TO247

IXSH35N100A Substitution

- IGBTⓘ Cross-Reference Search

IXSH35N100A datasheet

..1. Size:78K ixys
ixsh35n100a.pdf pdf_icon

High speed IGBT IXSH 35N100A VCES = 1000 V IXSM 35N100A IC25 = 70 A VCE(sat) = 3.5 V Short Circuit SOA Capability Symbol Test Conditions Maximum Ratings TO-247 AD (IXSH) VCES TJ = 25 C to 150 C 1000 V VCGR TJ = 25 C to 150 C; RGE = 1 MW 1000 V VGES Continuous 20 V G C VGEM Transient 30 V E IC25 TC = 25 C70 A IC90 TC = 90 C35 A TO-204 AE (IXSM) ICM TC = 25 C, 1 ms 140 A ... See More ⇒

6.1. Size:80K ixys
ixsh35n120b.pdf pdf_icon

IXSH 35N120B IGBT IC25 = 70 A IXST 35N120B VCES = 1200 V VCE(sat) = 3.6 V "S" Series - Improved SCSOA Capability Symbol Test Conditions Maximum Ratings TO-247 AD (IXSH) VCES TJ = 25 C to 150 C 1200 V VCGR TJ = 25 C to 150 C; RGE = 1 M 1200 V (TAB) VGES Continuous 20 V G C VGEM Transient 30 V E IC25 TC = 25 C70 A TO-268 ( IXST) IC90 TC = 90 C35 A ICM TC = 25 C, 1 ... See More ⇒

6.2. Size:144K ixys
ixsh35n140a.pdf pdf_icon

VCES = 1400V High Voltage IXSH35N140A IC90 = 35A High speed IGBT VCE(sat) 4.0V Short Circuit SOA Capability tfi(typ) = 200ns TO-247 Symbol Test Conditions Maximum Ratings VCES TJ = 25 C to 150 C 1400 V G VCGR TJ = 25 C to 150 C, RGE = 1M 1400 V C E Tab VGES Continuous 20 V VGEM Transient 30 V G = Gate C = Collector IC25 TC = 25 C 70 A E = Emi... See More ⇒

6.3. Size:82K ixys
ixsh35n120b ixst35n120b.pdf pdf_icon