IXSH50N60B Todos los transistores

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IXSH50N60B - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: IXSH50N60B

Polaridad de transistor: N-Channel

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 250W

Tensión colector-emisor (Vce): 600V

Voltaje de saturación colector-emisor (Vce sat): 2.5V

Tensión emisor-compuerta (Veg): 20V

Corriente del colector DC máxima (Ic): 75A

Temperatura operativa máxima (Tj), °C: 150

Tiempo de elevación: 70

Capacitancia de salida (Cc), pF: 3850pF

Empaquetado / Estuche: TO274

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IXSH50N60B Datasheet (PDF)

1.1. ixsh50n60b.pdf Size:75K _ixys

IXSH50N60B
IXSH50N60B

IXSH 50N60B IGBT High Speed V`bp = 600 V I`OR = 75 A Short Circuit SOA Capability V`bEe~iF = 2.5 V meEaaaaa~eo=C~i~=eUEEi Symbol Test Conditions Maximum Ratings TO-247 AD VCES TJ = 25C to 150C 600 V VCGR TJ = 25C to 150C; RGE = 1 M? 600 V G `=Eq^_F VGES Continuous 20 V C E VGEM Transient 30 V IC25 TC = 25C, limited by leads 75 A G = Gate, C = Collector, IC90 TC = 90C50 A

1.2. ixsh50n60b.pdf Size:73K _igbt_a

IXSH50N60B
IXSH50N60B

IXSH 50N60B IGBT High Speed V`bp = 600 V I`OR = 75 A Short Circuit SOA Capability V`bEë~íF = 2.5 V mêÉäáãáå~êó=Ç~í~=ëÜÉÉí Symbol Test Conditions Maximum Ratings TO-247 AD VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 600 V G `=Eq^_F VGES Continuous ±20 V C E VGEM Transient ±30 V IC25 TC = 25°C, limited by leads 75 A G = Gate, C = Co

Otros transistores... IXSH35N100A , IXSH35N120A , IXSH35N140A , IXSH40N60 , IXSH40N60A , IXSH40N60B , IXSH45N100 , IXSH45N120 , FII50-12E , IXSH50N60BS , IXSK30N60BD1 , IXSK30N60CD1 , IXSK35N120AU1 , IXSK40N60BD1 , IXSK40N60CD1 , IXSK50N60AU1 , IXSK50N60BD1 .

 


IXSH50N60B
  IXSH50N60B
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IGBT: IRGC16B60KB | IRGC16B120KB | IRGC15B120UB | IRGC15B120KB | IRGC100B60UB | IRGC100B60KB | IRGC100B120UB | IRGC100B120KB | IGC70T120T6RL | SIGC05T60SNC |


Introduzca al menos 1 números o letras