IXSK30N60BD1 IGBT Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: IXSK30N60BD1
Tipo de transistor: IGBT
Polaridad de transistor: N
ESPECIFICACIONES TECNICAS
Pcⓘ - Máxima potencia disipada: 200 W
|Vce|ⓘ - Tensión máxima colector-emisor: 600 V
|Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
|Ic|ⓘ - Colector de Corriente Continua a 25℃: 55 A
Tjⓘ - Temperatura máxima de unión: 150 ℃
CARACTERÍSTICAS ELÉCTRICAS
|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 2.7(max) V @25℃
trⓘ - Tiempo de subida, typ: 30 nS
Coesⓘ - Capacitancia de salida, typ: 240 pF
Encapsulados: TO264
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IXSK30N60BD1 datasheet
ixsk30n60bd1.pdf
High Speed IGBT with Diode IXSH 30N60BD1 VCES = 600 V IXSK 30N60BD1 IC25 = 55 A IXST 30N60BD1 VCE(sat) = 2.0 V Short Circuit SOA Capability tfi = 140 ns Symbol Test Conditions Maximum Ratings TO-247AD (IXSH) VCES TJ = 25 C to 150 C 600 V VCGR TJ = 25 C to 150 C; RGE = 1 MW 600 V G VGES Continuous 20 V C E VGEM Transient 30 V TO-268 (D3) IC25 TC = 25 C55 A (IXST) IC9
ixsk30n60cd1.pdf
High Speed IGBT with Diode IXSH 30 N60CD1 VCES = 600 V IXSK 30 N60CD1 IC25 = 55 A IXST 30 N60CD1 VCE(sat) = 2.5 V Short Circuit SOA Capability tfi = 70 ns Preliminary data TO-247AD (IXSH) Symbol Test Conditions Maximum Ratings G C VCES TJ = 25 C to 150 C 600 V E VCGR TJ = 25 C to 150 C; RGE = 1 MW 600 V TO-268 (D3) (IXST) VGES Continuous 20 V VGEM Transient 30 V C G
ixsk35n120bd1 ixsx35n120bd1.pdf
High Voltage IXSK 35N120BD1 VCES = 1200 V IGBT with Diode IXSX 35N120BD1 IC25 = 70 A VCE(SAT) = 3.6 V Short Circuit SOA Capability Preliminary data sheet TO-264 AA (IXSK) Symbol Test Conditions Maximum Ratings VCES TJ = 25 C to 150 C 1200 V G VCGR TJ = 25 C to 150 C; RGE = 1 MW 1200 V C E VGES Continuous 20 V PLUS TO-247TM VGEM Transient 30 V (IXSX) IC25 TC = 25 C70
ixsk35n120bd1.pdf
High Voltage IXSK 35N120BD1 VCES = 1200 V IGBT with Diode IXSX 35N120BD1 IC25 = 70 A VCE(SAT) = 3.6 V Short Circuit SOA Capability Preliminary data sheet TO-264 AA (IXSK) Symbol Test Conditions Maximum Ratings VCES TJ = 25 C to 150 C 1200 V G VCGR TJ = 25 C to 150 C; RGE = 1 MW 1200 V C E VGES Continuous 20 V PLUS TO-247TM VGEM Transient 30 V (IXSX) IC25 TC = 25 C70
Otros transistores... IXSH35N140A , IXSH40N60 , IXSH40N60A , IXSH40N60B , IXSH45N100 , IXSH45N120 , IXSH50N60B , IXSH50N60BS , IRG4PC50W , IXSK30N60CD1 , IXSK35N120AU1 , IXSK40N60BD1 , IXSK40N60CD1 , IXSK50N60AU1 , IXSK50N60BD1 , IXSK50N60BU1 , IXSM30N60 .
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