IXSK30N60BD1 Specs and Replacement
Type Designator: IXSK30N60BD1
Type: IGBT
Type of IGBT Channel: N
Absolute Maximum Ratings
Pc ⓘ - Maximum Power Dissipation: 200 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic| ⓘ - Maximum Collector Current: 55 A @25℃
Tj ⓘ - Maximum Junction Temperature: 150 ℃
Electrical Characteristics
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.7(max) V @25℃
tr ⓘ - Rise Time, typ: 30 nS
Coesⓘ - Output Capacitance, typ: 240 pF
Package: TO264
IXSK30N60BD1 Substitution - IGBT ⓘ Cross-Reference Search
IXSK30N60BD1 datasheet
ixsk30n60bd1.pdf
High Speed IGBT with Diode IXSH 30N60BD1 VCES = 600 V IXSK 30N60BD1 IC25 = 55 A IXST 30N60BD1 VCE(sat) = 2.0 V Short Circuit SOA Capability tfi = 140 ns Symbol Test Conditions Maximum Ratings TO-247AD (IXSH) VCES TJ = 25 C to 150 C 600 V VCGR TJ = 25 C to 150 C; RGE = 1 MW 600 V G VGES Continuous 20 V C E VGEM Transient 30 V TO-268 (D3) IC25 TC = 25 C55 A (IXST) IC9... See More ⇒
ixsk30n60cd1.pdf
High Speed IGBT with Diode IXSH 30 N60CD1 VCES = 600 V IXSK 30 N60CD1 IC25 = 55 A IXST 30 N60CD1 VCE(sat) = 2.5 V Short Circuit SOA Capability tfi = 70 ns Preliminary data TO-247AD (IXSH) Symbol Test Conditions Maximum Ratings G C VCES TJ = 25 C to 150 C 600 V E VCGR TJ = 25 C to 150 C; RGE = 1 MW 600 V TO-268 (D3) (IXST) VGES Continuous 20 V VGEM Transient 30 V C G... See More ⇒
ixsk35n120bd1 ixsx35n120bd1.pdf
High Voltage IXSK 35N120BD1 VCES = 1200 V IGBT with Diode IXSX 35N120BD1 IC25 = 70 A VCE(SAT) = 3.6 V Short Circuit SOA Capability Preliminary data sheet TO-264 AA (IXSK) Symbol Test Conditions Maximum Ratings VCES TJ = 25 C to 150 C 1200 V G VCGR TJ = 25 C to 150 C; RGE = 1 MW 1200 V C E VGES Continuous 20 V PLUS TO-247TM VGEM Transient 30 V (IXSX) IC25 TC = 25 C70... See More ⇒
ixsk35n120bd1.pdf
High Voltage IXSK 35N120BD1 VCES = 1200 V IGBT with Diode IXSX 35N120BD1 IC25 = 70 A VCE(SAT) = 3.6 V Short Circuit SOA Capability Preliminary data sheet TO-264 AA (IXSK) Symbol Test Conditions Maximum Ratings VCES TJ = 25 C to 150 C 1200 V G VCGR TJ = 25 C to 150 C; RGE = 1 MW 1200 V C E VGES Continuous 20 V PLUS TO-247TM VGEM Transient 30 V (IXSX) IC25 TC = 25 C70... See More ⇒
Specs: IXSH35N140A, IXSH40N60, IXSH40N60A, IXSH40N60B, IXSH45N100, IXSH45N120, IXSH50N60B, IXSH50N60BS, IRG4PC50W, IXSK30N60CD1, IXSK35N120AU1, IXSK40N60BD1, IXSK40N60CD1, IXSK50N60AU1, IXSK50N60BD1, IXSK50N60BU1, IXSM30N60
Keywords - IXSK30N60BD1 transistor spec
IXSK30N60BD1 cross reference
IXSK30N60BD1 equivalent finder
IXSK30N60BD1 lookup
IXSK30N60BD1 substitution
IXSK30N60BD1 replacement
History: IXSH45N120
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