IXSK35N120AU1 - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: IXSK35N120AU1
Tipo de transistor: IGBT + Diode
Polaridad de transistor: N
ESPECIFICACIONES TECNICAS
Pcⓘ - Máxima potencia disipada: 300 W
|Vce|ⓘ - Tensión máxima colector-emisor: 1200 V
|Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
|Ic|ⓘ - Colector de Corriente Continua a 25℃: 70 A
|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 4(max) V @25℃
|VGEth|ⓘ - Tensión máxima de puerta-umbral: 8 V
Tjⓘ - Temperatura máxima de unión: 150 ℃
trⓘ - Tiempo de subida, typ: 150 nS
Coesⓘ - Capacitancia de salida, typ: 295 pF
Qgⓘ - Carga total de la puerta, typ: 150 nC
Paquete / Cubierta: TO264
Búsqueda de reemplazo de IXSK35N120AU1 - IGBT
IXSK35N120AU1 Datasheet (PDF)
ixsk35n120au1.pdf
High Voltage IXSK35N120AU1VCES = 1200 VIGBT with DiodeIC25 = 70 ACombi PackVCE(sat) =4 VShort Circuit SOA CapabilityTO-264 AASymbol Test Conditions Maximum RatingsVCES TJ = 25C to 150C 1200 VVCGR TJ = 25C to 150C; RGE = 1 MW 1200 VC (TAB)VGES Continuous 20 VGCVGEM Transient 30 VEIC25 TC = 25C70 AG = Gate, C = Collector,IC90 TC = 90C35 AE =
ixsk35n120bd1 ixsx35n120bd1.pdf
High VoltageIXSK 35N120BD1VCES = 1200 VIGBT with DiodeIXSX 35N120BD1IC25 = 70 AVCE(SAT) = 3.6 VShort Circuit SOA CapabilityPreliminary data sheetTO-264 AA(IXSK)Symbol Test Conditions Maximum RatingsVCES TJ = 25C to 150C 1200 VGVCGR TJ = 25C to 150C; RGE = 1 MW 1200 V CEVGES Continuous 20 VPLUS TO-247TMVGEM Transient 30 V(IXSX)IC25 TC = 25C70
ixsk35n120bd1.pdf
High VoltageIXSK 35N120BD1VCES = 1200 VIGBT with DiodeIXSX 35N120BD1IC25 = 70 AVCE(SAT) = 3.6 VShort Circuit SOA CapabilityPreliminary data sheetTO-264 AA(IXSK)Symbol Test Conditions Maximum RatingsVCES TJ = 25C to 150C 1200 VGVCGR TJ = 25C to 150C; RGE = 1 MW 1200 V CEVGES Continuous 20 VPLUS TO-247TMVGEM Transient 30 V(IXSX)IC25 TC = 25C70
ixsk30n60cd1.pdf
High Speed IGBT with Diode IXSH 30 N60CD1VCES = 600 VIXSK 30 N60CD1IC25 = 55 AIXST 30 N60CD1VCE(sat) = 2.5 VShort Circuit SOA Capabilitytfi = 70 nsPreliminary dataTO-247AD(IXSH)Symbol Test Conditions Maximum RatingsGCVCES TJ = 25C to 150C 600 V EVCGR TJ = 25C to 150C; RGE = 1 MW 600 VTO-268 (D3)(IXST)VGES Continuous 20 VVGEM Transient 30 VCG
ixsk30n60bd1.pdf
High Speed IGBT with Diode IXSH 30N60BD1VCES = 600 VIXSK 30N60BD1IC25 = 55 AIXST 30N60BD1VCE(sat) = 2.0 VShort Circuit SOA Capabilitytfi = 140 nsSymbol Test Conditions Maximum Ratings TO-247AD(IXSH)VCES TJ = 25C to 150C 600 VVCGR TJ = 25C to 150C; RGE = 1 MW 600 VGVGES Continuous 20 VCEVGEM Transient 30 VTO-268 (D3)IC25 TC = 25C55 A(IXST)IC9
Otros transistores... IXSH40N60A , IXSH40N60B , IXSH45N100 , IXSH45N120 , IXSH50N60B , IXSH50N60BS , IXSK30N60BD1 , IXSK30N60CD1 , STGB10NB37LZ , IXSK40N60BD1 , IXSK40N60CD1 , IXSK50N60AU1 , IXSK50N60BD1 , IXSK50N60BU1 , IXSM30N60 , IXSM30N60A , IXSN35N100U1 .
Liste
Recientemente añadidas las descripciónes de los transistores
IGBT: AOTS40B65H1 | AOTF8B65MQ1 | AOTF5B65M2 | AOTF5B65M1 | AOTF20B65M2 | AOTF20B65M1 | AOTF20B65LN2 | AOTF15B65MQ1 | AOTF15B65M3 | AOTF15B65M2 | AOTF15B60D2