All IGBT. IXSK35N120AU1 Datasheet

 

IXSK35N120AU1 IGBT. Datasheet pdf. Equivalent

Type Designator: IXSK35N120AU1

Type: IGBT + Anti-Parallel Diode

Type of IGBT Channel: N

Maximum Power Dissipation (Pc), W: 300

Maximum Collector-Emitter Voltage |Vce|, V: 1200

Maximum Gate-Emitter Voltage |Vge|, V: 20

Maximum Collector Current |Ic| @25℃, A: 70

Collector-Emitter saturation Voltage |VCE(sat)|, typ, V: 4(max)

Maximum G-E Threshold Voltag |VGE(th)|, V: 8

Maximum Junction Temperature (Tj), ℃: 150

Rise Time (tr), typ, nS: 150

Collector Capacity (Cc), typ, pF: 295

Total Gate Charge (Qg), typ, nC: 150

Package: TO264

IXSK35N120AU1 Transistor Equivalent Substitute - IGBT Cross-Reference Search

 

IXSK35N120AU1 Datasheet (PDF)

 ..1. Size:39K  ixys
 ixsk35n120au1.pdf

IXSK35N120AU1 IXSK35N120AU1

High Voltage IXSK35N120AU1VCES = 1200 VIGBT with DiodeIC25 = 70 ACombi PackVCE(sat) =4 VShort Circuit SOA CapabilityTO-264 AASymbol Test Conditions Maximum RatingsVCES TJ = 25C to 150C 1200 VVCGR TJ = 25C to 150C; RGE = 1 MW 1200 VC (TAB)VGES Continuous 20 VGCVGEM Transient 30 VEIC25 TC = 25C70 AG = Gate, C = Collector,IC90 TC = 90C35 AE =

 4.1. Size:115K  ixys
 ixsk35n120bd1.pdf

IXSK35N120AU1 IXSK35N120AU1

High VoltageIXSK 35N120BD1VCES = 1200 VIGBT with DiodeIXSX 35N120BD1IC25 = 70 AVCE(SAT) = 3.6 VShort Circuit SOA CapabilityPreliminary data sheetTO-264 AA(IXSK)Symbol Test Conditions Maximum RatingsVCES TJ = 25C to 150C 1200 VGVCGR TJ = 25C to 150C; RGE = 1 MW 1200 V CEVGES Continuous 20 VPLUS TO-247TMVGEM Transient 30 V(IXSX)IC25 TC = 25C70

 4.2. Size:118K  ixys
 ixsk35n120bd1 ixsx35n120bd1.pdf

IXSK35N120AU1 IXSK35N120AU1

High VoltageIXSK 35N120BD1VCES = 1200 VIGBT with DiodeIXSX 35N120BD1IC25 = 70 AVCE(SAT) = 3.6 VShort Circuit SOA CapabilityPreliminary data sheetTO-264 AA(IXSK)Symbol Test Conditions Maximum RatingsVCES TJ = 25C to 150C 1200 VGVCGR TJ = 25C to 150C; RGE = 1 MW 1200 V CEVGES Continuous 20 VPLUS TO-247TMVGEM Transient 30 V(IXSX)IC25 TC = 25C70

 9.1. Size:117K  ixys
 ixsk30n60bd1.pdf

IXSK35N120AU1 IXSK35N120AU1

High Speed IGBT with Diode IXSH 30N60BD1VCES = 600 VIXSK 30N60BD1IC25 = 55 AIXST 30N60BD1VCE(sat) = 2.0 VShort Circuit SOA Capabilitytfi = 140 nsSymbol Test Conditions Maximum Ratings TO-247AD(IXSH)VCES TJ = 25C to 150C 600 VVCGR TJ = 25C to 150C; RGE = 1 MW 600 VGVGES Continuous 20 VCEVGEM Transient 30 VTO-268 (D3)IC25 TC = 25C55 A(IXST)IC9

 9.2. Size:71K  ixys
 ixsk30n60cd1.pdf

IXSK35N120AU1 IXSK35N120AU1

High Speed IGBT with Diode IXSH 30 N60CD1VCES = 600 VIXSK 30 N60CD1IC25 = 55 AIXST 30 N60CD1VCE(sat) = 2.5 VShort Circuit SOA Capabilitytfi = 70 nsPreliminary dataTO-247AD(IXSH)Symbol Test Conditions Maximum RatingsGCVCES TJ = 25C to 150C 600 V EVCGR TJ = 25C to 150C; RGE = 1 MW 600 VTO-268 (D3)(IXST)VGES Continuous 20 VVGEM Transient 30 VCG

Datasheet: IXSH40N60A , IXSH40N60B , IXSH45N100 , IXSH45N120 , IXSH50N60B , IXSH50N60BS , IXSK30N60BD1 , IXSK30N60CD1 , STGW60V60DF , IXSK40N60BD1 , IXSK40N60CD1 , IXSK50N60AU1 , IXSK50N60BD1 , IXSK50N60BU1 , IXSM30N60 , IXSM30N60A , IXSN35N100U1 .

 

 
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