All IGBT. IXSK35N120AU1 Datasheet

 

IXSK35N120AU1 Datasheet and Replacement


   Type Designator: IXSK35N120AU1
   Type: IGBT + Anti-Parallel Diode
   Type of IGBT Channel: N
   Pcⓘ - Maximum Power Dissipation: 300 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic|ⓘ - Maximum Collector Current: 70 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 4(max) V @25℃
   |VGEth|ⓘ - Maximum G-E Threshold Voltag: 8 V
   Tjⓘ - Maximum Junction Temperature: 150 ℃
   trⓘ - Rise Time, typ: 150 nS
   Coesⓘ - Output Capacitance, typ: 295 pF
   Qgⓘ - Total Gate Charge, typ: 150 nC
   Package: TO264
      - IGBT Cross-Reference

 

IXSK35N120AU1 Datasheet (PDF)

 ..1. Size:39K  ixys
 ixsk35n120au1.pdf pdf_icon

IXSK35N120AU1

High Voltage IXSK35N120AU1VCES = 1200 VIGBT with DiodeIC25 = 70 ACombi PackVCE(sat) =4 VShort Circuit SOA CapabilityTO-264 AASymbol Test Conditions Maximum RatingsVCES TJ = 25C to 150C 1200 VVCGR TJ = 25C to 150C; RGE = 1 MW 1200 VC (TAB)VGES Continuous 20 VGCVGEM Transient 30 VEIC25 TC = 25C70 AG = Gate, C = Collector,IC90 TC = 90C35 AE =

 4.1. Size:118K  ixys
 ixsk35n120bd1 ixsx35n120bd1.pdf pdf_icon

IXSK35N120AU1

High VoltageIXSK 35N120BD1VCES = 1200 VIGBT with DiodeIXSX 35N120BD1IC25 = 70 AVCE(SAT) = 3.6 VShort Circuit SOA CapabilityPreliminary data sheetTO-264 AA(IXSK)Symbol Test Conditions Maximum RatingsVCES TJ = 25C to 150C 1200 VGVCGR TJ = 25C to 150C; RGE = 1 MW 1200 V CEVGES Continuous 20 VPLUS TO-247TMVGEM Transient 30 V(IXSX)IC25 TC = 25C70

 4.2. Size:115K  ixys
 ixsk35n120bd1.pdf pdf_icon

IXSK35N120AU1

High VoltageIXSK 35N120BD1VCES = 1200 VIGBT with DiodeIXSX 35N120BD1IC25 = 70 AVCE(SAT) = 3.6 VShort Circuit SOA CapabilityPreliminary data sheetTO-264 AA(IXSK)Symbol Test Conditions Maximum RatingsVCES TJ = 25C to 150C 1200 VGVCGR TJ = 25C to 150C; RGE = 1 MW 1200 V CEVGES Continuous 20 VPLUS TO-247TMVGEM Transient 30 V(IXSX)IC25 TC = 25C70

 9.1. Size:71K  ixys
 ixsk30n60cd1.pdf pdf_icon

IXSK35N120AU1

High Speed IGBT with Diode IXSH 30 N60CD1VCES = 600 VIXSK 30 N60CD1IC25 = 55 AIXST 30 N60CD1VCE(sat) = 2.5 VShort Circuit SOA Capabilitytfi = 70 nsPreliminary dataTO-247AD(IXSH)Symbol Test Conditions Maximum RatingsGCVCES TJ = 25C to 150C 600 V EVCGR TJ = 25C to 150C; RGE = 1 MW 600 VTO-268 (D3)(IXST)VGES Continuous 20 VVGEM Transient 30 VCG

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Datasheet: IXSH40N60A , IXSH40N60B , IXSH45N100 , IXSH45N120 , IXSH50N60B , IXSH50N60BS , IXSK30N60BD1 , IXSK30N60CD1 , IRG4PC50U , IXSK40N60BD1 , IXSK40N60CD1 , IXSK50N60AU1 , IXSK50N60BD1 , IXSK50N60BU1 , IXSM30N60 , IXSM30N60A , IXSN35N100U1 .

History: SG7N06DP | IKD04N60RA

Keywords - IXSK35N120AU1 transistor datasheet

 IXSK35N120AU1 cross reference
 IXSK35N120AU1 equivalent finder
 IXSK35N120AU1 lookup
 IXSK35N120AU1 substitution
 IXSK35N120AU1 replacement

 

 
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