APT11GF120BRD Todos los transistores

 

APT11GF120BRD - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: APT11GF120BRD
   Tipo de transistor: IGBT + Diode
   Polaridad de transistor: N

ESPECIFICACIONES TECNICAS


   Pcⓘ - Máxima potencia disipada: 125 W
   |Vce|ⓘ - Tensión máxima colector-emisor: 1200 V
   |Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
   |Ic|ⓘ - Colector de Corriente Continua a 25℃: 22 A
   |VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 2.5 V @25℃
   |VGEth|ⓘ - Tensión máxima de puerta-umbral: 6.5 V
   Tjⓘ - Temperatura máxima de unión: 150 ℃
   trⓘ - Tiempo de subida, typ: 50 nS
   Coesⓘ - Capacitancia de salida, typ: 90 pF
   Qgⓘ - Carga total de la puerta, typ: 60 nC
   Paquete / Cubierta: TO247

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APT11GF120BRD Datasheet (PDF)

 ..1. Size:39K  1
apt11gf120brd.pdf

APT11GF120BRD
APT11GF120BRD

APT11GF120BRD1200V 22AFast IGBT & FREDThe Fast IGBT is a new generation of high voltage power IGBTs. Using Non- TO-247Punch Through Technology the Fast IGBT combined with an APT free-wheeling ultraFast Recovery Epitaxial Diode (FRED) offers superiorruggedness and fast switching speed.G Low Forward Voltage Drop High Freq. Switching to 20KHzCCE Low Tail Cur

 0.1. Size:37K  apt
apt11gf120brd1.pdf

APT11GF120BRD
APT11GF120BRD

APT11GF120BRD11200V 22AFast IGBT & FREDThe Fast IGBT is a new generation of high voltage power IGBTs. Using Non- TO-247Punch Through Technology the Fast IGBT combined with an APT free-wheeling ultraFast Recovery Epitaxial Diode (FRED) offers superiorruggedness and fast switching speed.G Low Forward Voltage Drop High Freq. Switching to 20KHzCEC Low Tail Cu

 0.2. Size:448K  apt
apt11gf120brdq1g.pdf

APT11GF120BRD
APT11GF120BRD

TYPICAL PERFORMANCE CURVES APT11GF120BRDQ1(G) 1200V APT11GF120BRDQ1 APT11GF120BRDQ1G**G Denotes RoHS Compliant, Pb Free Terminal Finish.FAST IGBT & FREDThe Fast IGBT is a new generation of high voltage power IGBTs. Using Non-Punch through technology, the Fast IGBT combined with an APT free wheeling Ultra Fast Recovery Epi-taxial Diode (FRED) offers superior ruggedness and f

 4.1. Size:406K  apt
apt11gf120krg.pdf

APT11GF120BRD
APT11GF120BRD

TYPICAL PERFORMANCE CURVES APT11GF120KR(G) 1200V APT11GF120KR APT11GF120KRG**G Denotes RoHS Compliant, Pb Free Terminal Finish.FAST IGBT & FREDTO-220The Fast IGBT is a new generation of high voltage power IGBTs. Using Non-Punch through technology, the Fast IGBT combined with an APT free wheeling Ultra Fast Recovery Epi-taxial Diode (FRED) offers superior ruggedness and fa

 4.2. Size:24K  apt
apt11gf120kr.pdf

APT11GF120BRD
APT11GF120BRD

APT11GF120KR1200V 22AFast IGBTTO-220The Fast IGBT is a new generation of high voltage power IGBTs. UsingNon-Punch Through Technology the Fast IGBT offers superior ruggedness,fast switching speed and low Collector-Emitter On voltage.GC Low Forward Voltage Drop High Freq. Switching to 20KHzEC Low Tail Current Ultra Low Leakage Current Avalanche Rated

Otros transistores... 2SH28 , 2SH29 , 2SH30 , 2SH31 , HCKZ75N65BH2 , IGC07T120T8L , IGC07T120T6L , APT100GF60LR , TGPF30N40P , IGC07R60DE , IGC07R60D , IGC06R60DE , APT15GF170BR , IGC03R60D , IGC03R60DE , IGC04R60D , IGC04R60DE .

 

 
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