Справочник IGBT. APT11GF120BRD

 

APT11GF120BRD - IGBT справочник. Даташиты. Аналоги. Параметры и характеристики.


   Наименование: APT11GF120BRD
   Тип транзистора: IGBT + Diode
   Тип управляющего канала: N
   Pcⓘ - Максимальная рассеиваемая мощность: 125 W
   |Vce|ⓘ - Предельно-допустимое напряжение коллектор-эмиттер: 1200 V
   |Vge|ⓘ - Максимально допустимое напряжение эмиттер-затвор: 20 V
   |Ic|ⓘ - Максимальный постоянный ток коллектора: 22 A @25℃
   |VCEsat|ⓘ - Напряжение насыщения коллектор-эмиттер типовое: 2.5 V @25℃
   |VGEth|ⓘ - Максимальное пороговое напряжение затвор-эмиттер: 6.5 V
   Tjⓘ - Максимальная температура перехода: 150 ℃
   trⓘ - Время нарастания типовое: 50 nS
   Coesⓘ - Выходная емкость, типовая: 90 pF
   Qgⓘ - Общий заряд затвора, typ: 60 nC
   Тип корпуса: TO247

 Аналог (замена) для APT11GF120BRD

 

 

APT11GF120BRD Datasheet (PDF)

 ..1. Size:39K  1
 apt11gf120brd.pdf

APT11GF120BRD APT11GF120BRD

APT11GF120BRD1200V 22AFast IGBT & FREDThe Fast IGBT is a new generation of high voltage power IGBTs. Using Non- TO-247Punch Through Technology the Fast IGBT combined with an APT free-wheeling ultraFast Recovery Epitaxial Diode (FRED) offers superiorruggedness and fast switching speed.G Low Forward Voltage Drop High Freq. Switching to 20KHzCCE Low Tail Cur

 0.1. Size:37K  apt
 apt11gf120brd1.pdf

APT11GF120BRD APT11GF120BRD

APT11GF120BRD11200V 22AFast IGBT & FREDThe Fast IGBT is a new generation of high voltage power IGBTs. Using Non- TO-247Punch Through Technology the Fast IGBT combined with an APT free-wheeling ultraFast Recovery Epitaxial Diode (FRED) offers superiorruggedness and fast switching speed.G Low Forward Voltage Drop High Freq. Switching to 20KHzCEC Low Tail Cu

 0.2. Size:448K  apt
 apt11gf120brdq1g.pdf

APT11GF120BRD APT11GF120BRD

TYPICAL PERFORMANCE CURVES APT11GF120BRDQ1(G) 1200V APT11GF120BRDQ1 APT11GF120BRDQ1G**G Denotes RoHS Compliant, Pb Free Terminal Finish.FAST IGBT & FREDThe Fast IGBT is a new generation of high voltage power IGBTs. Using Non-Punch through technology, the Fast IGBT combined with an APT free wheeling Ultra Fast Recovery Epi-taxial Diode (FRED) offers superior ruggedness and f

 4.1. Size:406K  apt
 apt11gf120krg.pdf

APT11GF120BRD APT11GF120BRD

TYPICAL PERFORMANCE CURVES APT11GF120KR(G) 1200V APT11GF120KR APT11GF120KRG**G Denotes RoHS Compliant, Pb Free Terminal Finish.FAST IGBT & FREDTO-220The Fast IGBT is a new generation of high voltage power IGBTs. Using Non-Punch through technology, the Fast IGBT combined with an APT free wheeling Ultra Fast Recovery Epi-taxial Diode (FRED) offers superior ruggedness and fa

 4.2. Size:24K  apt
 apt11gf120kr.pdf

APT11GF120BRD APT11GF120BRD

APT11GF120KR1200V 22AFast IGBTTO-220The Fast IGBT is a new generation of high voltage power IGBTs. UsingNon-Punch Through Technology the Fast IGBT offers superior ruggedness,fast switching speed and low Collector-Emitter On voltage.GC Low Forward Voltage Drop High Freq. Switching to 20KHzEC Low Tail Current Ultra Low Leakage Current Avalanche Rated

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