IXSN50N60BD3 - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: IXSN50N60BD3
Tipo de transistor: IGBT
Polaridad de transistor: N
ESPECIFICACIONES TECNICAS
Pcⓘ - Máxima potencia disipada: 250 W
|Vce|ⓘ - Tensión máxima colector-emisor: 600 V
|Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
|Ic|ⓘ - Colector de Corriente Continua a 25℃: 75 A
|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 2.2 V @25℃
Tjⓘ - Temperatura máxima de unión: 150 ℃
trⓘ - Tiempo de subida, typ: 70 nS
Coesⓘ - Capacitancia de salida, typ: 440 pF
Paquete / Cubierta: SOT227B
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IXSN50N60BD3 Datasheet (PDF)
ixsn50n60bd3.pdf
IXSN 50N60BD2VCES = 600 VHIGH Speed IGBTIXSN 50N60BD3IC25 = 75 Awith HiPerFREDVCEsat) = 2.5 VShort Circuit SOA Capabilitytfi = 150 nsBuck & boost configurationsPreliminary data...BD2 ...BD3Symbol Test Conditions Maximum Ratings SOT-227B, miniBLOCE 1534321VCES TJ = 25C to 150C 600 V2VCGR TJ = 25C to 150C; RGE = 1 MW 600 VVGES Continuous 20 VVGEM Tr
ixsn50n60bd2.pdf
IXSN 50N60BD2VCES = 600 VHIGH Speed IGBTIXSN 50N60BD3IC25 = 75 Awith HiPerFREDVCEsat) = 2.5 VShort Circuit SOA Capabilitytfi = 150 nsBuck & boost configurationsPreliminary data...BD2 ...BD3Symbol Test Conditions Maximum Ratings SOT-227B, miniBLOCE 1534321VCES TJ = 25C to 150C 600 V2VCGR TJ = 25C to 150C; RGE = 1 MW 600 VVGES Continuous 20 VVGEM Tr
ixsn52n60au1.pdf
IGBT with Diode IXSN 52N60AU1 VCES = 600 VIC25 = 80 ACombi Pack VCE(sat) = 3 V3Short Circuit SOA Capability241Symbol Test Conditions Maximum Ratings miniBLOC, SOT-227 B1VCES TJ = 25C to 150C 600 V2VCGR TJ = 25C to 150C; RGE = 1 MW 600 AVGES Continuous 20 VVGEM Transient 30 V4IC25 TC = 25C80 A3IC90 TC = 90C40 A1 = Emitter , 3 = CollectorIC
ixsn55n120a.pdf
VCES = 1200 VHigh Voltage IGBT IXSN 55N120AIC25 = 110 AVCE(sat) = 4 V3Short Circuit SOA Capability2Preliminary Data4miniBLOC, SOT-227 BSymbol Test Conditions Maximum Ratings1VCES TJ = 25C to 150C 1200 V2VCGR TJ = 25C to 150C; RGE = 1 MW 1200 AVGES Continuous 20 VVGEM Transient 30 V43IC25 TC = 25C 110 AIC90 TC = 90C55 A1 = Emitter 3 = Co
ixsn55n120au1.pdf
IXSN 55N120AU1VCES = 1200 VHigh VoltageIC25 = 110 AIGBT with DiodeVCE(sat) = 4 VShort Circuit SOA Capability32Preliminary data41miniBLOC, SOT-227 BSymbol Test Conditions Maximum RatingsVCES TJ = 25C to 150C 1200 V1VCGR TJ = 25C to 150C; RGE = 1 MW 1200 A2VGES Continuous 20 VVGEM Transient 30 VIC25 TC = 25C 110 A4IC90 TC = 90C55 A3I
Otros transistores... IXSK50N60AU1 , IXSK50N60BD1 , IXSK50N60BU1 , IXSM30N60 , IXSM30N60A , IXSN35N100U1 , IXSN35N120AU1 , IXSN50N60BD2 , IRG4PF50W , IXSN52N60AU1 , IXSN55N120A , IXSN55N120AU1 , IXSN62N60U1 , IXSN80N60A , IXSN80N60AU1 , IXSP16N60 , IXST15N120B .
Liste
Recientemente añadidas las descripciónes de los transistores
IGBT: AOTS40B65H1 | AOTF8B65MQ1 | AOTF5B65M2 | AOTF5B65M1 | AOTF20B65M2 | AOTF20B65M1 | AOTF20B65LN2 | AOTF15B65MQ1 | AOTF15B65M3 | AOTF15B65M2 | AOTF15B60D2