All IGBT. IXSN50N60BD3 Datasheet

 

IXSN50N60BD3 Datasheet and Replacement


   Type Designator: IXSN50N60BD3
   Type: IGBT
   Type of IGBT Channel: N
   Pcⓘ - Maximum Power Dissipation: 250 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic|ⓘ - Maximum Collector Current: 75 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.2 V @25℃
   Tjⓘ - Maximum Junction Temperature: 150 ℃
   trⓘ - Rise Time, typ: 70 nS
   Coesⓘ - Output Capacitance, typ: 440 pF
   Package: SOT227B
      - IGBT Cross-Reference

 

IXSN50N60BD3 Datasheet (PDF)

 ..1. Size:133K  ixys
 ixsn50n60bd3.pdf pdf_icon

IXSN50N60BD3

IXSN 50N60BD2VCES = 600 VHIGH Speed IGBTIXSN 50N60BD3IC25 = 75 Awith HiPerFREDVCEsat) = 2.5 VShort Circuit SOA Capabilitytfi = 150 nsBuck & boost configurationsPreliminary data...BD2 ...BD3Symbol Test Conditions Maximum Ratings SOT-227B, miniBLOCE 1534321VCES TJ = 25C to 150C 600 V2VCGR TJ = 25C to 150C; RGE = 1 MW 600 VVGES Continuous 20 VVGEM Tr

 3.1. Size:133K  ixys
 ixsn50n60bd2.pdf pdf_icon

IXSN50N60BD3

IXSN 50N60BD2VCES = 600 VHIGH Speed IGBTIXSN 50N60BD3IC25 = 75 Awith HiPerFREDVCEsat) = 2.5 VShort Circuit SOA Capabilitytfi = 150 nsBuck & boost configurationsPreliminary data...BD2 ...BD3Symbol Test Conditions Maximum Ratings SOT-227B, miniBLOCE 1534321VCES TJ = 25C to 150C 600 V2VCGR TJ = 25C to 150C; RGE = 1 MW 600 VVGES Continuous 20 VVGEM Tr

 9.1. Size:150K  ixys
 ixsn52n60au1.pdf pdf_icon

IXSN50N60BD3

IGBT with Diode IXSN 52N60AU1 VCES = 600 VIC25 = 80 ACombi Pack VCE(sat) = 3 V3Short Circuit SOA Capability241Symbol Test Conditions Maximum Ratings miniBLOC, SOT-227 B1VCES TJ = 25C to 150C 600 V2VCGR TJ = 25C to 150C; RGE = 1 MW 600 AVGES Continuous 20 VVGEM Transient 30 V4IC25 TC = 25C80 A3IC90 TC = 90C40 A1 = Emitter , 3 = CollectorIC

 9.2. Size:70K  ixys
 ixsn55n120a.pdf pdf_icon

IXSN50N60BD3

VCES = 1200 VHigh Voltage IGBT IXSN 55N120AIC25 = 110 AVCE(sat) = 4 V3Short Circuit SOA Capability2Preliminary Data4miniBLOC, SOT-227 BSymbol Test Conditions Maximum Ratings1VCES TJ = 25C to 150C 1200 V2VCGR TJ = 25C to 150C; RGE = 1 MW 1200 AVGES Continuous 20 VVGEM Transient 30 V43IC25 TC = 25C 110 AIC90 TC = 90C55 A1 = Emitter 3 = Co

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Datasheet: IXSK50N60AU1 , IXSK50N60BD1 , IXSK50N60BU1 , IXSM30N60 , IXSM30N60A , IXSN35N100U1 , IXSN35N120AU1 , IXSN50N60BD2 , XNF15N60T , IXSN52N60AU1 , IXSN55N120A , IXSN55N120AU1 , IXSN62N60U1 , IXSN80N60A , IXSN80N60AU1 , IXSP16N60 , IXST15N120B .

History: SGP04N60

Keywords - IXSN50N60BD3 transistor datasheet

 IXSN50N60BD3 cross reference
 IXSN50N60BD3 equivalent finder
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