IXSN50N60BD3 PDF and Equivalents Search

 

IXSN50N60BD3 Specs and Replacement

Type Designator: IXSN50N60BD3

Type: IGBT

Type of IGBT Channel: N

Absolute Maximum Ratings

Pc ⓘ - Maximum Power Dissipation: 250 W

|Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V

|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V

|Ic| ⓘ - Maximum Collector Current: 75 A @25℃

Tj ⓘ - Maximum Junction Temperature: 150 ℃

Electrical Characteristics

|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.2 V @25℃

tr ⓘ - Rise Time, typ: 70 nS

Coesⓘ - Output Capacitance, typ: 440 pF

Package: SOT227B

 IXSN50N60BD3 Substitution

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IXSN50N60BD3 datasheet

 ..1. Size:133K  ixys
 ixsn50n60bd3.pdf pdf_icon

IXSN50N60BD3

IXSN 50N60BD2 VCES = 600 V HIGH Speed IGBT IXSN 50N60BD3 IC25 = 75 A with HiPerFRED VCEsat) = 2.5 V Short Circuit SOA Capability tfi = 150 ns Buck & boost configurations Preliminary data ...BD2 ...BD3 Symbol Test Conditions Maximum Ratings SOT-227B, miniBLOC E 153432 1 VCES TJ = 25 C to 150 C 600 V 2 VCGR TJ = 25 C to 150 C; RGE = 1 MW 600 V VGES Continuous 20 V VGEM Tr... See More ⇒

 3.1. Size:133K  ixys
 ixsn50n60bd2.pdf pdf_icon

IXSN50N60BD3

IXSN 50N60BD2 VCES = 600 V HIGH Speed IGBT IXSN 50N60BD3 IC25 = 75 A with HiPerFRED VCEsat) = 2.5 V Short Circuit SOA Capability tfi = 150 ns Buck & boost configurations Preliminary data ...BD2 ...BD3 Symbol Test Conditions Maximum Ratings SOT-227B, miniBLOC E 153432 1 VCES TJ = 25 C to 150 C 600 V 2 VCGR TJ = 25 C to 150 C; RGE = 1 MW 600 V VGES Continuous 20 V VGEM Tr... See More ⇒

 9.1. Size:150K  ixys
 ixsn52n60au1.pdf pdf_icon

IXSN50N60BD3

IGBT with Diode IXSN 52N60AU1 VCES = 600 V IC25 = 80 A Combi Pack VCE(sat) = 3 V 3 Short Circuit SOA Capability 2 4 1 Symbol Test Conditions Maximum Ratings miniBLOC, SOT-227 B 1 VCES TJ = 25 C to 150 C 600 V 2 VCGR TJ = 25 C to 150 C; RGE = 1 MW 600 A VGES Continuous 20 V VGEM Transient 30 V 4 IC25 TC = 25 C80 A 3 IC90 TC = 90 C40 A 1 = Emitter , 3 = Collector IC... See More ⇒

 9.2. Size:70K  ixys
 ixsn55n120a.pdf pdf_icon

IXSN50N60BD3

VCES = 1200 V High Voltage IGBT IXSN 55N120A IC25 = 110 A VCE(sat) = 4 V 3 Short Circuit SOA Capability 2 Preliminary Data 4 miniBLOC, SOT-227 B Symbol Test Conditions Maximum Ratings 1 VCES TJ = 25 C to 150 C 1200 V 2 VCGR TJ = 25 C to 150 C; RGE = 1 MW 1200 A VGES Continuous 20 V VGEM Transient 30 V 4 3 IC25 TC = 25 C 110 A IC90 TC = 90 C55 A 1 = Emitter 3 = Co... See More ⇒

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Specs: IXSK50N60AU1, IXSK50N60BD1, IXSK50N60BU1, IXSM30N60, IXSM30N60A, IXSN35N100U1, IXSN35N120AU1, IXSN50N60BD2, FGL60N100BNTD, IXSN52N60AU1, IXSN55N120A, IXSN55N120AU1, IXSN62N60U1, IXSN80N60A, IXSN80N60AU1, IXSP16N60, IXST15N120B

Keywords - IXSN50N60BD3 transistor spec

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