IGC07R60DE Todos los transistores

 

IGC07R60DE - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: IGC07R60DE
   Tipo de transistor: IGBT + Diode
   Polaridad de transistor: N
   |Vce|ⓘ - Tensión máxima colector-emisor: 600 V
   |Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
   |Ic|ⓘ - Colector de Corriente Continua a 25℃: 10 A
   |VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 1.65 V @25℃
   |VGEth|ⓘ - Tensión máxima de puerta-umbral: 5.7 V
   Tjⓘ - Temperatura máxima de unión: 175 ℃
   Coesⓘ - Capacitancia de salida, typ: 37 pF
   Paquete / Cubierta: CHIP
     - Selección de transistores por parámetros

 

IGC07R60DE Datasheet (PDF)

 ..1. Size:96K  infineon
igc07r60de.pdf pdf_icon

IGC07R60DE

IGC07R60DETRENCHSTOPTM RC-Series for hard switching applicationsIGBT chip with monolithically integrated diode in packages offering space saving advantageFeatures:TRENCHSTOPTM Reverse Conducting (RC) technology for600V applications offering: Optimised VCEsat and VF for low conduction losses Smooth switching performance leading to low EMI levels Very tight parameter dist

 5.1. Size:130K  infineon
igc07r60d.pdf pdf_icon

IGC07R60DE

IGC07R60D TRENCHSTOPTM RC-Series for hard switching applications IGBT chip with monolithically integrated diode in packages offering space saving advantage Features: TRENCHSTOPTM Reverse Conducting (RC) technology for 600V applications offering: Optimised VCEsat and VF for low conduction losses Smooth switching performance leading to low EMI levels Very tight param

 9.1. Size:71K  infineon
igc07t120t8l.pdf pdf_icon

IGC07R60DE

IGC07T120T8LIGBT4 Low Power ChipFeatures: Recommended for: 1200V Trench & Field stop technology low / medium power modules C low switching losses positive temperature coefficientApplications: easy paralleling low / medium power drives Qualified according to JEDEC for targetGapplications EChip Type VCE ICn1 ) Die Size PackageIGC07T120T8L 1200V 4A 2

 9.2. Size:64K  infineon
sigc07t60un.pdf pdf_icon

IGC07R60DE

SIGC07T60UN High Speed IGBT Chip in NPT-technology CFEATURES: This chip is used for: low Eoff SKB06N60HS 600V NPT technology 100m chip GApplications: short circuit prove E Welding positive temperature coefficient PFC easy paralleling UPS Chip Type VCE ICn Die Size Package Ordering Code Q67050-A4220-SIGC07T60UN 60

Otros transistores... 2SH29 , 2SH30 , 2SH31 , HCKZ75N65BH2 , IGC07T120T8L , IGC07T120T6L , APT100GF60LR , APT11GF120BRD , XNF15N60T , IGC07R60D , IGC06R60DE , APT15GF170BR , IGC03R60D , IGC03R60DE , IGC04R60D , IGC04R60DE , IGC05R60D .

History: DF900R12IP4D | STGWT30V60F | T0360NB25A

 

 
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History: DF900R12IP4D | STGWT30V60F | T0360NB25A

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