Справочник IGBT. IGC07R60DE

 

IGC07R60DE - IGBT справочник. Даташиты. Аналоги. Параметры и характеристики.


   Наименование: IGC07R60DE
   Тип транзистора: IGBT + Diode
   Тип управляющего канала: N
   |Vce|ⓘ - Предельно-допустимое напряжение коллектор-эмиттер: 600 V
   |Vge|ⓘ - Максимально допустимое напряжение эмиттер-затвор: 20 V
   |Ic|ⓘ - Максимальный постоянный ток коллектора: 10 A @25℃
   |VCEsat|ⓘ - Напряжение насыщения коллектор-эмиттер типовое: 1.65 V @25℃
   |VGEth|ⓘ - Максимальное пороговое напряжение затвор-эмиттер: 5.7 V
   Tjⓘ - Максимальная температура перехода: 175 ℃
   Coesⓘ - Выходная емкость, типовая: 37 pF
   Тип корпуса: CHIP

 Аналог (замена) для IGC07R60DE

 

 

IGC07R60DE Datasheet (PDF)

 ..1. Size:96K  infineon
igc07r60de.pdf

IGC07R60DE
IGC07R60DE

IGC07R60DETRENCHSTOPTM RC-Series for hard switching applicationsIGBT chip with monolithically integrated diode in packages offering space saving advantageFeatures:TRENCHSTOPTM Reverse Conducting (RC) technology for600V applications offering: Optimised VCEsat and VF for low conduction losses Smooth switching performance leading to low EMI levels Very tight parameter dist

 5.1. Size:130K  infineon
igc07r60d.pdf

IGC07R60DE
IGC07R60DE

IGC07R60D TRENCHSTOPTM RC-Series for hard switching applications IGBT chip with monolithically integrated diode in packages offering space saving advantage Features: TRENCHSTOPTM Reverse Conducting (RC) technology for 600V applications offering: Optimised VCEsat and VF for low conduction losses Smooth switching performance leading to low EMI levels Very tight param

 9.1. Size:71K  infineon
igc07t120t8l.pdf

IGC07R60DE
IGC07R60DE

IGC07T120T8LIGBT4 Low Power ChipFeatures: Recommended for: 1200V Trench & Field stop technology low / medium power modules C low switching losses positive temperature coefficientApplications: easy paralleling low / medium power drives Qualified according to JEDEC for targetGapplications EChip Type VCE ICn1 ) Die Size PackageIGC07T120T8L 1200V 4A 2

 9.2. Size:64K  infineon
sigc07t60un.pdf

IGC07R60DE
IGC07R60DE

SIGC07T60UN High Speed IGBT Chip in NPT-technology CFEATURES: This chip is used for: low Eoff SKB06N60HS 600V NPT technology 100m chip GApplications: short circuit prove E Welding positive temperature coefficient PFC easy paralleling UPS Chip Type VCE ICn Die Size Package Ordering Code Q67050-A4220-SIGC07T60UN 60

 9.3. Size:75K  infineon
sigc07t60snc.pdf

IGC07R60DE
IGC07R60DE

SIGC07T60SNC IGBT Chip in NPT-technology CFEATURES: 600V NPT technology This chip is used for: 100m chip DuoPack SKP06N60 short circuit prove positive temperature coefficient GApplications: E easy paralleling drives Chip Type VCE ICn Die Size Package Ordering Code Q67041-A4672-SIGC07T60SNC 600V 6A 2.6 x 2.6 mm2 sawn on foil A003 Q6

 9.4. Size:72K  infineon
igc07t120t6l.pdf

IGC07R60DE
IGC07R60DE

IGC07T120T6L IGBT4 Low Power Chip Features: 1200V Trench + Field stop technology This chip is used for:C low switching losses low / medium power modules positive temperature coefficient easy paralleling Applications: G low / medium power drives E Chip Type VCE ICn Die Size Package IGC07T120T6L 1200V 4A 2.54 x 2.72 mm2 sawn on foil MECHANICAL P

 9.5. Size:64K  infineon
sigc07t60nc.pdf

IGC07R60DE
IGC07R60DE

SIGC07T60NC IGBT Chip in NPT-technology CFEATURES: This chip is used for: 600V NPT technology 100m chip IGBT-Modules positive temperature coefficient easy paralleling GApplications: E drives Chip Type VCE ICn Die Size Package Ordering Code Q67050-A4134-SIGC07T60NC 600V 6A 2.6 x 2.6 mm2 sawn on foil A001 MECHANICAL PARAMETER: mm2 Ra

Другие IGBT... 2SH29 , 2SH30 , 2SH31 , HCKZ75N65BH2 , IGC07T120T8L , IGC07T120T6L , APT100GF60LR , APT11GF120BRD , IRG4PF50W , IGC07R60D , IGC06R60DE , APT15GF170BR , IGC03R60D , IGC03R60DE , IGC04R60D , IGC04R60DE , IGC05R60D .

 

 
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