Справочник IGBT. IGC07R60DE

 

IGC07R60DE - IGBT справочник. Даташиты. Аналоги. Параметры и характеристики.

Наименование: IGC07R60DE

Тип управляющего канала: N-Channel

Предельно-допустимое напряжение коллектор-эмиттер (Uce): 600

Напряжение насыщения коллектор-эмиттер (Ucesat): 2.1

Максимально допустимое напряжение эмиттер-затвор (Ueg): 20

Максимальный постоянный ток коллектора (Ic): 10

Максимальная температура перехода (Tj): 175

Емкость коллектора (Cc), pf: 37

Корпус: CHIP

Аналог (замена) для IGC07R60DE

 

 

IGC07R60DE Datasheet (PDF)

1.1. igc07r60de.pdf Size:96K _igbt_a

IGC07R60DE
IGC07R60DE

IGC07R60DE TRENCHSTOPTM RC-Series for hard switching applications IGBT chip with monolithically integrated diode in packages offering space saving advantage Features: TRENCHSTOPTM Reverse Conducting (RC) technology for 600V applications offering: • Optimised VCEsat and VF for low conduction losses • Smooth switching performance leading to low EMI levels • Very tight parameter dist

1.2. igc07r60d.pdf Size:130K _igbt_a

IGC07R60DE
IGC07R60DE

 IGC07R60D TRENCHSTOPTM RC-Series for hard switching applications IGBT chip with monolithically integrated diode in packages offering space saving advantage Features: TRENCHSTOPTM Reverse Conducting (RC) technology for 600V applications offering: • Optimised VCEsat and VF for low conduction losses • Smooth switching performance leading to low EMI levels • Very tight param

 5.1. sigc07t60un.pdf Size:64K _igbt

IGC07R60DE
IGC07R60DE

SIGC07T60UN High Speed IGBT Chip in NPT-technology C FEATURES: This chip is used for: • low Eoff • SKB06N60HS • 600V NPT technology • 100µm chip G Applications: • short circuit prove E • Welding • positive temperature coefficient • PFC • easy paralleling • UPS Chip Type VCE ICn Die Size Package Ordering Code Q67050-A4220- SIGC07T60UN 60

5.2. sigc07t60snc.pdf Size:75K _igbt

IGC07R60DE
IGC07R60DE

SIGC07T60SNC IGBT Chip in NPT-technology C FEATURES: • 600V NPT technology This chip is used for: • 100µm chip • DuoPack SKP06N60 • short circuit prove • positive temperature coefficient G Applications: E • easy paralleling • drives Chip Type VCE ICn Die Size Package Ordering Code Q67041-A4672- SIGC07T60SNC 600V 6A 2.6 x 2.6 mm2 sawn on foil A003 Q6

 5.3. sigc07t60nc.pdf Size:64K _igbt

IGC07R60DE
IGC07R60DE

SIGC07T60NC IGBT Chip in NPT-technology C FEATURES: This chip is used for: • 600V NPT technology • 100µm chip • IGBT-Modules • positive temperature coefficient • easy paralleling G Applications: E • drives Chip Type VCE ICn Die Size Package Ordering Code Q67050-A4134- SIGC07T60NC 600V 6A 2.6 x 2.6 mm2 sawn on foil A001 MECHANICAL PARAMETER: mm2 Ra

5.4. igc07t120t6l.pdf Size:72K _igbt_a

IGC07R60DE
IGC07R60DE

 IGC07T120T6L IGBT4 Low Power Chip Features: • 1200V Trench + Field stop technology This chip is used for: C • low switching losses • low / medium power modules • positive temperature coefficient • easy paralleling Applications: G • low / medium power drives E Chip Type VCE ICn Die Size Package IGC07T120T6L 1200V 4A 2.54 x 2.72 mm2 sawn on foil MECHANICAL P

 5.5. igc07t120t8l.pdf Size:71K _igbt_a

IGC07R60DE
IGC07R60DE

IGC07T120T8L IGBT4 Low Power Chip Features: Recommended for:  1200V Trench & Field stop technology  low / medium power modules C  low switching losses  positive temperature coefficient Applications:  easy paralleling  low / medium power drives  Qualified according to JEDEC for target G applications E Chip Type VCE ICn1 ) Die Size Package IGC07T120T8L 1200V 4A 2

Другие IGBT... 2SH29 , 2SH30 , 2SH31 , 40N60C3R , IGC07T120T8L , IGC07T120T6L , APT100GF60LR , APT11GF120BRD , G3N60C3D , IGC07R60D , IGC06R60DE , APT15GF170BR , IGC03R60D , IGC03R60DE , IGC04R60D , IGC04R60DE , IGC05R60D .

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Обновления

IGBT: RJP30H2A | GT50JR22 | IRGC16B60KB | IRGC16B120KB | IRGC15B120UB | IRGC15B120KB | IRGC100B60UB | IRGC100B60KB | IRGC100B120UB | IRGC100B120KB |
 


 

 

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