IXSN80N60A IGBT Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: IXSN80N60A
Tipo de transistor: IGBT
Polaridad de transistor: N
ESPECIFICACIONES TECNICAS
Pcⓘ - Máxima potencia disipada: 500 W
|Vce|ⓘ - Tensión máxima colector-emisor: 600 V
|Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
|Ic|ⓘ - Colector de Corriente Continua a 25℃: 160 A
Tjⓘ - Temperatura máxima de unión: 150 ℃
CARACTERÍSTICAS ELÉCTRICAS
|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 3(max) V @25℃
trⓘ - Tiempo de subida, typ: 220 nS
Coesⓘ - Capacitancia de salida, typ: 650 pF
Encapsulados: SOT227B
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IXSN80N60A datasheet
ixsn80n60a.pdf
VCES = 600 V High Current IGBT IXSN80N60A IC25 = 160 A VCE(sat) = 3 V Short Circuit SOA Capability G Preliminary Data E E Symbol Test Conditions Maximum Ratings miniBLOC , SOT-227 B 1 VCES TJ = 25 C to 150 C 600 V 2 VCGR TJ = 25 C to 150 C; RGE = 1 MW 600 A VGES Continuous 20 V VGEM Transient 30 V 4 3 IC25 TC = 25 C 160 A IC90 TC = 90 C80 A 1 = Emitter 3 = Collec
ixsn80n60au1.pdf
IGBT with Diode IXSN 80N60AU1 VCES = 600 V IC25 = 160 A VCE(sat) = 3 V Short Circuit SOA Capability C G E E Symbol Test Conditions Maximum Ratings miniBLOC, SOT-227 B E153432 E VCES TJ = 25 C to 150 C 600 V G VCGR TJ = 25 C to 150 C; RGE = 1 MW 600 A VGES Continuous 20 V VGEM Transient 30 V E IC25 TC = 25 C 160 A C IC90 TC = 90 C80 A E = Emitter , C = Collector
ixsn80n60bd1.pdf
IGBT with Diode IXSN 80N60BD1 VCES = 600 V Short Circuit SOA Capability IC25 = 160 A VCE(sat) = 2.5 V tfi = 180 ns C G Preliminary Data Sheet E E Symbol Test Conditions Maximum Ratings miniBLOC, SOT-227 B E153432 E V TJ = 25 C to 150 C 600 V CES G V TJ = 25 C to 150 C; RGE = 1 M 600 A CGR V Continuous 20 V GES VGEM Transient 30 V E IC25 TC = 25 C (Silicon chip
Otros transistores... IXSN35N100U1 , IXSN35N120AU1 , IXSN50N60BD2 , IXSN50N60BD3 , IXSN52N60AU1 , IXSN55N120A , IXSN55N120AU1 , IXSN62N60U1 , GT30F125 , IXSN80N60AU1 , IXSP16N60 , IXST15N120B , IXST30N60B , IXST30N60BD1 , IXST30N60C , IXST30N60CD1 , IXST40N60B .
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