IXSN80N60A - параметры транзистора, его аналоги, Даташиты

IXSN80N60A Datasheet (PDF)

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VCES = 600 VHigh Current IGBTIXSN80N60AIC25 = 160 AVCE(sat) = 3 VShort Circuit SOA CapabilityGPreliminary DataEESymbol Test Conditions Maximum RatingsminiBLOC , SOT-227 B1VCES TJ = 25C to 150C 600 V2VCGR TJ = 25C to 150C; RGE = 1 MW 600 AVGES Continuous 20 VVGEM Transient 30 V 43IC25 TC = 25C 160 AIC90 TC = 90C80 A1 = Emitter 3 = Collec

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IGBT with Diode IXSN 80N60AU1 VCES = 600 VIC25 = 160 AVCE(sat) = 3 VShort Circuit SOA CapabilityCGEESymbol Test Conditions Maximum Ratings miniBLOC, SOT-227 B E153432EVCES TJ = 25C to 150C 600 VGVCGR TJ = 25C to 150C; RGE = 1 MW 600 AVGES Continuous 20 VVGEM Transient 30 VEIC25 TC = 25C 160 ACIC90 TC = 90C80 AE = Emitter , C = Collector

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IGBT with Diode IXSN 80N60BD1 VCES = 600 VShort Circuit SOA Capability IC25 = 160 AVCE(sat) = 2.5 Vtfi = 180 nsCGPreliminary Data SheetEESymbol Test Conditions Maximum Ratings miniBLOC, SOT-227 B E153432EV TJ = 25C to 150C 600 VCESGV TJ = 25C to 150C; RGE = 1 M 600 ACGRV Continuous 20 VGESVGEM Transient 30 VEIC25 TC = 25C (Silicon chip

Другие IGBT... IXSN35N100U1 , IXSN35N120AU1 , IXSN50N60BD2 , IXSN50N60BD3 , IXSN52N60AU1 , IXSN55N120A , IXSN55N120AU1 , IXSN62N60U1 , SGT60U65FD1PT , IXSN80N60AU1 , IXSP16N60 , IXST15N120B , IXST30N60B , IXST30N60BD1 , IXST30N60C , IXST30N60CD1 , IXST40N60B .