IXSN80N60A - аналоги, параметры транзистора - Справочник транзисторов

IXSN80N60A даташит

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VCES = 600 V High Current IGBT IXSN80N60A IC25 = 160 A VCE(sat) = 3 V Short Circuit SOA Capability G Preliminary Data E E Symbol Test Conditions Maximum Ratings miniBLOC , SOT-227 B 1 VCES TJ = 25 C to 150 C 600 V 2 VCGR TJ = 25 C to 150 C; RGE = 1 MW 600 A VGES Continuous 20 V VGEM Transient 30 V 4 3 IC25 TC = 25 C 160 A IC90 TC = 90 C80 A 1 = Emitter 3 = Collec

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IGBT with Diode IXSN 80N60AU1 VCES = 600 V IC25 = 160 A VCE(sat) = 3 V Short Circuit SOA Capability C G E E Symbol Test Conditions Maximum Ratings miniBLOC, SOT-227 B E153432 E VCES TJ = 25 C to 150 C 600 V G VCGR TJ = 25 C to 150 C; RGE = 1 MW 600 A VGES Continuous 20 V VGEM Transient 30 V E IC25 TC = 25 C 160 A C IC90 TC = 90 C80 A E = Emitter , C = Collector

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IGBT with Diode IXSN 80N60BD1 VCES = 600 V Short Circuit SOA Capability IC25 = 160 A VCE(sat) = 2.5 V tfi = 180 ns C G Preliminary Data Sheet E E Symbol Test Conditions Maximum Ratings miniBLOC, SOT-227 B E153432 E V TJ = 25 C to 150 C 600 V CES G V TJ = 25 C to 150 C; RGE = 1 M 600 A CGR V Continuous 20 V GES VGEM Transient 30 V E IC25 TC = 25 C (Silicon chip

Другие IGBT... IXSN35N100U1 , IXSN35N120AU1 , IXSN50N60BD2 , IXSN50N60BD3 , IXSN52N60AU1 , IXSN55N120A , IXSN55N120AU1 , IXSN62N60U1 , GT30F125 , IXSN80N60AU1 , IXSP16N60 , IXST15N120B , IXST30N60B , IXST30N60BD1 , IXST30N60C , IXST30N60CD1 , IXST40N60B .