IXST15N120B Todos los transistores

 

IXST15N120B - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: IXST15N120B
   Tipo de transistor: IGBT
   Polaridad de transistor: N

ESPECIFICACIONES TECNICAS


   Pcⓘ - Máxima potencia disipada: 150 W
   |Vce|ⓘ - Tensión máxima colector-emisor: 1200 V
   |Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
   |Ic|ⓘ - Colector de Corriente Continua a 25℃: 30 A
   |VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 3 V @25℃
   Tjⓘ - Temperatura máxima de unión: 150 ℃
   trⓘ - Tiempo de subida, typ: 25 nS
   Coesⓘ - Capacitancia de salida, typ: 98 pF
   Paquete / Cubierta: TO268
     - Selección de transistores por parámetros

 

IXST15N120B Datasheet (PDF)

 ..1. Size:54K  ixys
 ixsh15n120b ixst15n120b.pdf pdf_icon

IXST15N120B

IXSH 15N120BHIGH Voltage IGBTIC25 = 30 AIXST 15N120BVCES = 1200 V"S" Series - Improved SCSOA CapabilityVCE(sat) = 3.4 VPreliminary dataSymbol Test Conditions Maximum Ratings TO-247 AD (IXSH)VCES TJ = 25C to 150C 1200 VVCGR TJ = 25C to 150C; RGE = 1 MW 1200 VVGES Continuous 20 V(TAB)GVGEM Transient 30 VCEIC25 TC = 25C30 AIC90 TC = 90C15 ATO-2

 ..2. Size:53K  ixys
 ixst15n120b.pdf pdf_icon

IXST15N120B

IXSH 15N120BHIGH Voltage IGBTIC25 = 30 AIXST 15N120BVCES = 1200 V"S" Series - Improved SCSOA CapabilityVCE(sat) = 3.4 VPreliminary dataSymbol Test Conditions Maximum Ratings TO-247 AD (IXSH)VCES TJ = 25C to 150C 1200 VVCGR TJ = 25C to 150C; RGE = 1 MW 1200 VVGES Continuous 20 V(TAB)GVGEM Transient 30 VCEIC25 TC = 25C30 AIC90 TC = 90C15 ATO-2

 0.1. Size:56K  ixys
 ixsh15n120bd1 ixst15n120bd1.pdf pdf_icon

IXST15N120B

IXSH 15N120BD1HIGH Voltage IGBTIC25 = 30 AIXST 15N120BD1with DiodeVCES = 1200 V"S" Series - Improved SCSOA CapabilityVCE(sat) = 3.4 VPreliminary dataSymbol Test Conditions Maximum Ratings TO-247 AD (IXSH)VCES TJ = 25C to 150C 1200 VVCGR TJ = 25C to 150C; RGE = 1 MW 1200 V(TAB)VGES Continuous 20 VGCVGEM Transient 30 VEIC25 TC = 25C30 ATO-268 (

 0.2. Size:55K  ixys
 ixst15n120bd1.pdf pdf_icon

IXST15N120B

IXSH 15N120BD1HIGH Voltage IGBTIC25 = 30 AIXST 15N120BD1with DiodeVCES = 1200 V"S" Series - Improved SCSOA CapabilityVCE(sat) = 3.4 VPreliminary dataSymbol Test Conditions Maximum Ratings TO-247 AD (IXSH)VCES TJ = 25C to 150C 1200 VVCGR TJ = 25C to 150C; RGE = 1 MW 1200 V(TAB)VGES Continuous 20 VGCVGEM Transient 30 VEIC25 TC = 25C30 ATO-268 (

MOSTRAR MÁS

Otros transistores... IXSN50N60BD3 , IXSN52N60AU1 , IXSN55N120A , IXSN55N120AU1 , IXSN62N60U1 , IXSN80N60A , IXSN80N60AU1 , IXSP16N60 , IRG4PH50UD , IXST30N60B , IXST30N60BD1 , IXST30N60C , IXST30N60CD1 , IXST40N60B , IXSM40N60A , IXSM45N100 , IXSX35N120AU1 .

History: IXSX50N60AU1S | IXSN35N120AU1 | HGTD10N50F1S9A | IXBF20N300 | MSG15T120FPE | CM150EXS-24S | IRG4BC30F

 

 
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