IXST40N60B Todos los transistores

 

IXST40N60B - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: IXST40N60B
   Tipo de transistor: IGBT
   Polaridad de transistor: N

ESPECIFICACIONES TECNICAS


   Pcⓘ - Máxima potencia disipada: 280 W
   |Vce|ⓘ - Tensión máxima colector-emisor: 600 V
   |Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
   |Ic|ⓘ - Colector de Corriente Continua a 25℃: 75 A
   |VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 2.2(max) V @25℃
   |VGEth|ⓘ - Tensión máxima de puerta-umbral: 7 V
   Tjⓘ - Temperatura máxima de unión: 150 ℃
   trⓘ - Tiempo de subida, typ: 50 nS
   Coesⓘ - Capacitancia de salida, typ: 280 pF
   Qgⓘ - Carga total de la puerta, typ: 190 nC
   Paquete / Cubierta: TO268
     - Selección de transistores por parámetros

 

IXST40N60B Datasheet (PDF)

 ..1. Size:54K  ixys
 ixst40n60b.pdf pdf_icon

IXST40N60B

IXSH 40N60B VCES = 600VHigh Speed IGBTIXST 40N60B IC25 = 75AVCE(sat) = 2.2VShort Circuit SOA Capabilitytfi typ = 100 nsPreliminary dataTO-247 AD (IXSH)Symbol Test Conditions Maximum RatingsVCES TJ = 25C to 150C 600 V(TAB)VCGR TJ = 25C to 150C; RGE = 1 MW 600 VGCVGES Continuous 20 VEVGEM Transient 30 VTO-268 (D3) ( IXST)IC25 TC = 25C75 AIC90 TC

 ..2. Size:55K  ixys
 ixsh40n60b ixst40n60b.pdf pdf_icon

IXST40N60B

IXSH 40N60B VCES = 600VHigh Speed IGBTIXST 40N60B IC25 = 75AVCE(sat) = 2.2VShort Circuit SOA Capabilitytfi typ = 100 nsPreliminary dataTO-247 AD (IXSH)Symbol Test Conditions Maximum RatingsVCES TJ = 25C to 150C 600 V(TAB)VCGR TJ = 25C to 150C; RGE = 1 MW 600 VGCVGES Continuous 20 VEVGEM Transient 30 VTO-268 (D3) ( IXST)IC25 TC = 25C75 AIC90 TC

 9.1. Size:53K  ixys
 ixst45n120b.pdf pdf_icon

IXST40N60B

IXSH 45N120BHigh Voltage IGBT IC25 = 75 AIXST 45N120BVCES = 1200 V"S" Series - Improved SCSOA CapabilityVCE(sat) = 3.0 VPreliminary dataSymbol Test Conditions Maximum RatingsTO-247 AD (IXSH)VCES TJ = 25C to 150C 1200 VVCGR TJ = 25C to 150C; RGE = 1 MW 1200 V(TAB)VGES Continuous 20 VGCVGEM Transient 30 VEIC25 TC = 25C (limited by leads) 75 ATO-26

 9.2. Size:54K  ixys
 ixsh45n120b ixst45n120b.pdf pdf_icon

IXST40N60B

IXSH 45N120BHigh Voltage IGBT IC25 = 75 AIXST 45N120BVCES = 1200 V"S" Series - Improved SCSOA CapabilityVCE(sat) = 3.0 VPreliminary dataSymbol Test Conditions Maximum RatingsTO-247 AD (IXSH)VCES TJ = 25C to 150C 1200 VVCGR TJ = 25C to 150C; RGE = 1 MW 1200 V(TAB)VGES Continuous 20 VGCVGEM Transient 30 VEIC25 TC = 25C (limited by leads) 75 ATO-26

MOSTRAR MÁS

Otros transistores... IXSN80N60A , IXSN80N60AU1 , IXSP16N60 , IXST15N120B , IXST30N60B , IXST30N60BD1 , IXST30N60C , IXST30N60CD1 , YGW60N65F1A2 , IXSM40N60A , IXSM45N100 , IXSX35N120AU1 , IXSX40N60CD1 , IXSX50N60AU1 , IXSX50N60AU1S , IXSX50N60BD1 , IXSX50N60BU1 .

History: 2PG006

 

 
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