IXST40N60B Todos los transistores

 

IXST40N60B IGBT Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: IXST40N60B

Tipo de transistor: IGBT

Polaridad de transistor: N

ESPECIFICACIONES TECNICAS

Pcⓘ - Máxima potencia disipada: 280 W

|Vce|ⓘ - Tensión máxima colector-emisor: 600 V

|Vge|ⓘ - Tensión máxima puerta-emisor: 20 V

|Ic|ⓘ - Colector de Corriente Continua a 25℃: 75 A

Tjⓘ - Temperatura máxima de unión: 150 ℃

CARACTERÍSTICAS ELÉCTRICAS

|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 2.2(max) V @25℃

trⓘ - Tiempo de subida, typ: 50 nS

Coesⓘ - Capacitancia de salida, typ: 280 pF

Encapsulados: TO268

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IXST40N60B datasheet

 ..1. Size:54K  ixys
 ixst40n60b.pdf pdf_icon

IXST40N60B

IXSH 40N60B VCES = 600V High Speed IGBT IXST 40N60B IC25 = 75A VCE(sat) = 2.2V Short Circuit SOA Capability tfi typ = 100 ns Preliminary data TO-247 AD (IXSH) Symbol Test Conditions Maximum Ratings VCES TJ = 25 C to 150 C 600 V (TAB) VCGR TJ = 25 C to 150 C; RGE = 1 MW 600 V G C VGES Continuous 20 V E VGEM Transient 30 V TO-268 (D3) ( IXST) IC25 TC = 25 C75 A IC90 TC

 ..2. Size:55K  ixys
 ixsh40n60b ixst40n60b.pdf pdf_icon

IXST40N60B

IXSH 40N60B VCES = 600V High Speed IGBT IXST 40N60B IC25 = 75A VCE(sat) = 2.2V Short Circuit SOA Capability tfi typ = 100 ns Preliminary data TO-247 AD (IXSH) Symbol Test Conditions Maximum Ratings VCES TJ = 25 C to 150 C 600 V (TAB) VCGR TJ = 25 C to 150 C; RGE = 1 MW 600 V G C VGES Continuous 20 V E VGEM Transient 30 V TO-268 (D3) ( IXST) IC25 TC = 25 C75 A IC90 TC

 9.1. Size:53K  ixys
 ixst45n120b.pdf pdf_icon

IXST40N60B

IXSH 45N120B High Voltage IGBT IC25 = 75 A IXST 45N120B VCES = 1200 V "S" Series - Improved SCSOA Capability VCE(sat) = 3.0 V Preliminary data Symbol Test Conditions Maximum Ratings TO-247 AD (IXSH) VCES TJ = 25 C to 150 C 1200 V VCGR TJ = 25 C to 150 C; RGE = 1 MW 1200 V (TAB) VGES Continuous 20 V G C VGEM Transient 30 V E IC25 TC = 25 C (limited by leads) 75 A TO-26

 9.2. Size:54K  ixys
 ixsh45n120b ixst45n120b.pdf pdf_icon

IXST40N60B

IXSH 45N120B High Voltage IGBT IC25 = 75 A IXST 45N120B VCES = 1200 V "S" Series - Improved SCSOA Capability VCE(sat) = 3.0 V Preliminary data Symbol Test Conditions Maximum Ratings TO-247 AD (IXSH) VCES TJ = 25 C to 150 C 1200 V VCGR TJ = 25 C to 150 C; RGE = 1 MW 1200 V (TAB) VGES Continuous 20 V G C VGEM Transient 30 V E IC25 TC = 25 C (limited by leads) 75 A TO-26

MOSTRAR MÁS

Otros transistores... IXSN80N60A , IXSN80N60AU1 , IXSP16N60 , IXST15N120B , IXST30N60B , IXST30N60BD1 , IXST30N60C , IXST30N60CD1 , FGW75N60HD , IXSM40N60A , IXSM45N100 , IXSX35N120AU1 , IXSX40N60CD1 , IXSX50N60AU1 , IXSX50N60AU1S , IXSX50N60BD1 , IXSX50N60BU1 .

 

 

 

 

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