IXST40N60B PDF and Equivalents Search

 

IXST40N60B Specs and Replacement

Type Designator: IXST40N60B

Type: IGBT

Type of IGBT Channel: N

Absolute Maximum Ratings

Pc ⓘ - Maximum Power Dissipation: 280 W

|Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V

|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V

|Ic| ⓘ - Maximum Collector Current: 75 A @25℃

Tj ⓘ - Maximum Junction Temperature: 150 ℃

Electrical Characteristics

|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.2(max) V @25℃

tr ⓘ - Rise Time, typ: 50 nS

Coesⓘ - Output Capacitance, typ: 280 pF

Package: TO268

 IXST40N60B Substitution

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IXST40N60B datasheet

 ..1. Size:54K  ixys
 ixst40n60b.pdf pdf_icon

IXST40N60B

IXSH 40N60B VCES = 600V High Speed IGBT IXST 40N60B IC25 = 75A VCE(sat) = 2.2V Short Circuit SOA Capability tfi typ = 100 ns Preliminary data TO-247 AD (IXSH) Symbol Test Conditions Maximum Ratings VCES TJ = 25 C to 150 C 600 V (TAB) VCGR TJ = 25 C to 150 C; RGE = 1 MW 600 V G C VGES Continuous 20 V E VGEM Transient 30 V TO-268 (D3) ( IXST) IC25 TC = 25 C75 A IC90 TC... See More ⇒

 ..2. Size:55K  ixys
 ixsh40n60b ixst40n60b.pdf pdf_icon

IXST40N60B

IXSH 40N60B VCES = 600V High Speed IGBT IXST 40N60B IC25 = 75A VCE(sat) = 2.2V Short Circuit SOA Capability tfi typ = 100 ns Preliminary data TO-247 AD (IXSH) Symbol Test Conditions Maximum Ratings VCES TJ = 25 C to 150 C 600 V (TAB) VCGR TJ = 25 C to 150 C; RGE = 1 MW 600 V G C VGES Continuous 20 V E VGEM Transient 30 V TO-268 (D3) ( IXST) IC25 TC = 25 C75 A IC90 TC... See More ⇒

 9.1. Size:53K  ixys
 ixst45n120b.pdf pdf_icon

IXST40N60B

IXSH 45N120B High Voltage IGBT IC25 = 75 A IXST 45N120B VCES = 1200 V "S" Series - Improved SCSOA Capability VCE(sat) = 3.0 V Preliminary data Symbol Test Conditions Maximum Ratings TO-247 AD (IXSH) VCES TJ = 25 C to 150 C 1200 V VCGR TJ = 25 C to 150 C; RGE = 1 MW 1200 V (TAB) VGES Continuous 20 V G C VGEM Transient 30 V E IC25 TC = 25 C (limited by leads) 75 A TO-26... See More ⇒

 9.2. Size:54K  ixys
 ixsh45n120b ixst45n120b.pdf pdf_icon

IXST40N60B

IXSH 45N120B High Voltage IGBT IC25 = 75 A IXST 45N120B VCES = 1200 V "S" Series - Improved SCSOA Capability VCE(sat) = 3.0 V Preliminary data Symbol Test Conditions Maximum Ratings TO-247 AD (IXSH) VCES TJ = 25 C to 150 C 1200 V VCGR TJ = 25 C to 150 C; RGE = 1 MW 1200 V (TAB) VGES Continuous 20 V G C VGEM Transient 30 V E IC25 TC = 25 C (limited by leads) 75 A TO-26... See More ⇒

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Specs: IXSN80N60A, IXSN80N60AU1, IXSP16N60, IXST15N120B, IXST30N60B, IXST30N60BD1, IXST30N60C, IXST30N60CD1, FGW75N60HD, IXSM40N60A, IXSM45N100, IXSX35N120AU1, IXSX40N60CD1, IXSX50N60AU1, IXSX50N60AU1S, IXSX50N60BD1, IXSX50N60BU1

Keywords - IXST40N60B transistor spec

 IXST40N60B cross reference
 IXST40N60B equivalent finder
 IXST40N60B lookup
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