APT15GF170BR IGBT Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: APT15GF170BR
Tipo de transistor: IGBT
Polaridad de transistor: N
ESPECIFICACIONES TECNICAS
Pcⓘ - Máxima potencia disipada: 310 W
|Vce|ⓘ - Tensión máxima colector-emisor: 1700 V
|Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
|Ic|ⓘ - Colector de Corriente Continua a 25℃: 15 A
Tjⓘ -
Temperatura máxima de unión: 150 ℃
CARACTERÍSTICAS ELÉCTRICAS
|VCEsat|ⓘ -
Voltaje de saturación colector-emisor, typ: 3.5 V @25℃
Coesⓘ - Capacitancia de salida, typ: 160 pF
Encapsulados: TO247
Búsqueda de reemplazo de APT15GF170BR IGBT
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APT15GF170BR datasheet
..1. Size:45K 1
apt15gf170br.pdf 
APT15GF170BR 1700V 25A Fast IGBT TO-247 The Fast IGBT is a new generation of high voltage power IGBTs. Using Non-Punch Through Technology the Fast IGBT offers superior ruggedness, fast switching speed and low Collector-Emitter On voltage. G Low Forward Voltage Drop High Freq. Switching to 20KHz C C E Low Tail Current Ultra Low Leakage Current Avalanche Rated
8.1. Size:192K apt
apt15gn120kg.pdf
TYPICAL PERFORMANCE CURVES APT15GN120K(G) 1200V APT15GN120K APT15GN120KG* *G Denotes RoHS Compliant, Pb Free Terminal Finish. Utilizing the latest Field Stop and Trench Gate technologies, these IGBT's have ultra low VCE(ON) and are ideal for low frequency applications that require absolute minimum TO-220 conduction loss. Easy paralleling is a result of very tight parameter dist
8.2. Size:160K apt
apt15gp90b.pdf
TYPICAL PERFORMANCE CURVES APT15GP90B APT15GP90B 900V POWER MOS 7 IGBT TO-247 The POWER MOS 7 IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for high frequency switchmode power supplies. G C E Low Conduction Loss 100 kHz operation
8.3. Size:68K apt
apt15gt60brd.pdf
APT15GT60BRD 600V 30A Thunderbolt IGBT & FRED The Thunderbolt IGBT is a new generation of high voltage power IGBTs. TO-247 Using Non-Punch Through Technology the Thunderbolt IGBT combined with an APT free-wheeling ultraFast Recovery Epitaxial Diode (FRED) offers superior ruggedness and ultrafast switching speed. G Low Forward Voltage Drop High Freq. Switching to 150KHz
8.4. Size:211K apt
apt15gp60bsc.pdf
TYPICAL PERFORMANCE CURVES APT15GP60BSC APT15GP60BSC 600V POWER MOS 7 IGBT TO-247 The POWER MOS 7 IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for high frequency switchmode power supplies. G C E Low Conduction Loss 100 kHz oper
8.5. Size:1026K apt
apt15gp60bdq1g.pdf
TYPICAL PERFORMANCE CURVES APT15GP60BDQ1 APT15GP60BDQ1 600V POWER MOS 7 IGBT TO-247 The POWER MOS 7 IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for high frequency switchmode power supplies. G C E Low Conduction Loss 100 kHz ope
8.6. Size:24K apt
apt15gt60br.pdf
APT15GT60BR 600V 31A Thunderbolt IGBT TO-247 The Thunderbolt IGBT is a new generation of high voltage power IGBTs. Using Non-Punch Through Technology the Thunderbolt IGBT offers superior ruggedness and ultrafast switching speed. G Low Forward Voltage Drop High Freq. Switching to 150KHz C C E Low Tail Current Ultra Low Leakage Current Avalanche Rated
8.8. Size:126K apt
apt15gp60bdf1.pdf
APT15GP60BDF1 600V POWER MOS 7 IGBT TO-247 The POWER MOS 7 IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for high frequency switchmode power supplies. G C E Low Conduction Loss 100 kHz operation @ 400V, 19A C Low Gate Charge
8.9. Size:395K apt
apt15gt60brg.pdf
TYPICAL PERFORMANCE CURVES APT15GT60BR(G) 600V APT15GT60BR APT15GT60BRG* *G Denotes RoHS Compliant, Pb Free Terminal Finish. Thunderbolt IGBT The Thunderblot IGBT is a new generation of high voltage power IGBTs. Using Non- Punch Through Technology, the Thunderblot IGBT offers superior ruggedness and ultrafast switching speed. G C E Low Forward Voltage Drop Hig
8.10. Size:253K apt
apt15gp60bdq1.pdf
TYPICAL PERFORMANCE CURVES APT15GP60BDQ1 APT15GP60BDQ1 600V POWER MOS 7 IGBT TO-247 The POWER MOS 7 IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for high frequency switchmode power supplies. G C E Low Conduction Loss 100 kHz ope
8.11. Size:1011K apt
apt15gt120brdq1g.pdf
1200V APT15GT120BRDQ1 APT15GT120BRDQ1G* *G Denotes RoHS Compliant, Pb Free Terminal Finish. Thunderbolt IGBT The Thunderblot IGBT is a new generation of high voltage power IGBTs. Using Non- Punch Through Technology, the Thunderblot IGBT offers superior ruggedness and ultrafast switching speed. G C E Low Forward Voltage Drop High Freq. Switching to
8.12. Size:462K apt
apt15gt60brdq1g.pdf
TYPICAL PERFORMANCE CURVES APT15GT60BRDQ1(G) 600V APT15GT60BRDQ1 APT15GT60BRDQ1G* *G Denotes RoHS Compliant, Pb Free Terminal Finish. Thunderbolt IGBT The Thunderblot IGBT is a new generation of high voltage power IGBTs. Using Non- Punch Through Technology, the Thunderblot IGBT offers superior ruggedness and ultrafast switching speed. G C E Low Forward Voltage Dro
8.13. Size:191K apt
apt15gp90bdf1.pdf
TYPICAL PERFORMANCE CURVES APT15GP90BDF1 APT15GP90BDF1 900V POWER MOS 7 IGBT TO-247 The POWER MOS 7 IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for high frequency switchmode power supplies. G C E C Low Conduction Loss 100 kHz
8.15. Size:160K apt
apt15gp90k.pdf
TYPICAL PERFORMANCE CURVES APT15GP90K APT15GP90K 900V POWER MOS 7 IGBT TO-220 The POWER MOS 7 IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for high frequency switchmode power supplies. G C E Low Conduction Loss 100 kHz operatio
8.16. Size:400K apt
apt15gp90kg.pdf
TYPICAL PERFORMANCE CURVES APT15GP90K(G) 900V APT15GP90K APT15GP90KG* *G Denotes RoHS Compliant, Pb Free Terminal Finish. POWER MOS 7 IGBT TO-220 The POWER MOS 7 IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for high frequency swit
8.17. Size:331K apt
apt15gt60krg.pdf
TYPICAL PERFORMANCE CURVES APT15GT60KR(G) 600V APT15GT60KR APT15GT60KRG* *G Denotes RoHS Compliant, Pb Free Terminal Finish. Thunderbolt IGBT TO-220 The Thunderblot IGBT is a new generation of high voltage power IGBTs. Using Non- Punch Through Technology, the Thunderblot IGBT offers superior ruggedness and ultrafast switching speed. Low Forward Voltage Drop High
8.18. Size:424K apt
apt15gp90bdq1g.pdf
TYPICAL PERFORMANCE CURVES APT15GP90BDQ1(G) 900V APT15GP90BDQ1 APT15GP90BDQ1G* *G Denotes RoHS Compliant, Pb Free Terminal Finish. POWER MOS 7 IGBT The POWER MOS 7 IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for high frequency swi
8.19. Size:25K apt
apt15gt60kr.pdf
APT15GT60KR 600V 31A Thunderbolt IGBT TO-220 The Thunderbolt IGBT is a new generation of high voltage power IGBTs. Using Non-Punch Through Technology the Thunderbolt IGBT offers superior ruggedness and ultrafast switching speed. G C Low Forward Voltage Drop High Freq. Switching to 150KHz E C Low Tail Current Ultra Low Leakage Current Avalanche Rated
8.20. Size:780K apt
apt15gt120brg.pdf
1200V APT15GT120BR APT15GT120BRG* *G Denotes RoHS Compliant, Pb Free Terminal Finish. Thunderbolt IGBT The Thunderblot IGBT is a new generation of high voltage power IGBTs. Using Non- Punch Through Technology, the Thunderblot IGBT offers superior ruggedness and ultrafast switching speed. G C E Low Forward Voltage Drop High Freq. Switching to 50KH
8.21. Size:401K apt
apt15gp90bg.pdf
TYPICAL PERFORMANCE CURVES APT15GP90B(G) 900V APT15GP90B APT15GP90BG* *G Denotes RoHS Compliant, Pb Free Terminal Finish. POWER MOS 7 IGBT The POWER MOS 7 IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for high frequency switchmode p
8.23. Size:224K apt
apt15gn120bdq1g.pdf
TYPICAL PERFORMANCE CURVES APT15GN120BDQ1(G) 1200V APT15GN120BDQ1 APT15GN120BDQ1G* *G Denotes RoHS Compliant, Pb Free Terminal Finish. Utilizing the latest Field Stop and Trench Gate technologies, these IGBT's have ultra low VCE(ON) and are ideal for low frequency applications that require absolute minimum conduction loss. Easy paralleling is a result of very tight parameter dis
8.24. Size:265K microsemi
apt15gp60bg.pdf
APT15GP60B APT15GP60S 600V POWER MOS 7 IGBT The POWER MOS 7 IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for high frequency switchmode power supplies. Low Conduction Loss 100 kHz operation @ 400V, 19A C Low Gate Charge 20
8.25. Size:202K microsemi
apt15gp60bdlg.pdf
APT15GP60BDL(G) 600V, 15A, VCE(ON) = 2.2V Typical Resonant Mode Combi IGBT The POWER MOS 7 IGBT used in this resonant mode combi is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for high frequency switchmode power supplies. Features Typical Applicat
8.26. Size:118K microsemi
apt15gt120srg.pdf
TYPICAL PERFORMANCE CURVES APT15GT120BR_SR(G) APT15GT120BR APT15GT120SR APT15GT120BR(G) APT15GT120SR(G) 1200V *G Denotes RoHS Compliant, Pb Free Terminal Finish. Thunderbolt IGBT (B) D3PAK The Thunderblot IGBT is a new generation of high voltage power IGBTs. Using Non- Punch (S) Through Technology, the Thunderblot IGBT offers superior ruggedness and ultrafast C switchi
8.27. Size:265K microsemi
apt15gp60s.pdf
APT15GP60B APT15GP60S 600V POWER MOS 7 IGBT The POWER MOS 7 IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for high frequency switchmode power supplies. Low Conduction Loss 100 kHz operation @ 400V, 19A C Low Gate Charge 20
8.28. Size:160K microsemi
apt15gn120sdq1g.pdf
TYPICAL PERFORMANCE CURVES APT15GN120BD_SDQ1(G) APT15GN120BDQ1 APT15GN120SDQ1 APT15GN120BDQ1(G) APT15GN120SDQ1(G) 1200V *G Denotes RoHS Compliant, Pb Free Terminal Finish. Utilizing the latest Field Stop and Trench Gate technologies, these IGBT's have ultra (B) low VCE(ON) and are ideal for low frequency applications that require absolute minimum conduction loss. Easy paralleling
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History: IGC07T120T6L
| IXSN50N60BD3
| IXSN35N120AU1
