Справочник IGBT. APT15GF170BR

 

APT15GF170BR - IGBT справочник. Даташиты. Аналоги. Параметры и характеристики.


   Наименование: APT15GF170BR
   Тип транзистора: IGBT
   Тип управляющего канала: N
   Pcⓘ - Максимальная рассеиваемая мощность: 310 W
   |Vce|ⓘ - Предельно-допустимое напряжение коллектор-эмиттер: 1700 V
   |Vge|ⓘ - Максимально допустимое напряжение эмиттер-затвор: 20 V
   |Ic|ⓘ - Максимальный постоянный ток коллектора: 15 A @25℃
   |VCEsat|ⓘ - Напряжение насыщения коллектор-эмиттер типовое: 3.5 V @25℃
   |VGEth|ⓘ - Максимальное пороговое напряжение затвор-эмиттер: 6.5 V
   Tjⓘ - Максимальная температура перехода: 150 ℃
   Coesⓘ - Выходная емкость, типовая: 160 pF
   Qgⓘ - Общий заряд затвора, typ: TBD nC
   Тип корпуса: TO247

 Аналог (замена) для APT15GF170BR

 

 

APT15GF170BR Datasheet (PDF)

 ..1. Size:45K  1
apt15gf170br.pdf

APT15GF170BR
APT15GF170BR

APT15GF170BR1700V 25AFast IGBTTO-247The Fast IGBT is a new generation of high voltage power IGBTs. UsingNon-Punch Through Technology the Fast IGBT offers superior ruggedness,fast switching speed and low Collector-Emitter On voltage.G Low Forward Voltage Drop High Freq. Switching to 20KHzCCE Low Tail Current Ultra Low Leakage Current Avalanche Rated

 8.1. Size:192K  apt
apt15gn120kg.pdf

APT15GF170BR
APT15GF170BR

TYPICAL PERFORMANCE CURVES APT15GN120K(G) 1200V APT15GN120K APT15GN120KG**G Denotes RoHS Compliant, Pb Free Terminal Finish.Utilizing the latest Field Stop and Trench Gate technologies, these IGBT's have ultra low VCE(ON) and are ideal for low frequency applications that require absolute minimum TO-220conduction loss. Easy paralleling is a result of very tight parameter dist

 8.2. Size:160K  apt
apt15gp90b.pdf

APT15GF170BR
APT15GF170BR

TYPICAL PERFORMANCE CURVES APT15GP90BAPT15GP90B900V POWER MOS 7 IGBTTO-247The POWER MOS 7 IGBT is a new generation of high voltage power IGBTs.Using Punch Through Technology this IGBT is ideal for many high frequency,high voltage switching applications and has been optimized for high frequencyswitchmode power supplies. GCE Low Conduction Loss 100 kHz operation

 8.3. Size:68K  apt
apt15gt60brd.pdf

APT15GF170BR
APT15GF170BR

APT15GT60BRD600V 30AThunderbolt IGBT & FREDThe Thunderbolt IGBT is a new generation of high voltage power IGBTs. TO-247Using Non-Punch Through Technology the Thunderbolt IGBT combinedwith an APT free-wheeling ultraFast Recovery Epitaxial Diode (FRED) offerssuperior ruggedness and ultrafast switching speed.G Low Forward Voltage Drop High Freq. Switching to 150KHz

 8.4. Size:211K  apt
apt15gp60bsc.pdf

APT15GF170BR
APT15GF170BR

TYPICAL PERFORMANCE CURVESAPT15GP60BSCAPT15GP60BSC600V POWER MOS 7 IGBTTO-247The POWER MOS 7 IGBT is a new generation of high voltage power IGBTs.Using Punch Through Technology this IGBT is ideal for many high frequency,high voltage switching applications and has been optimized for high frequencyswitchmode power supplies. GCE Low Conduction Loss 100 kHz oper

 8.5. Size:1026K  apt
apt15gp60bdq1g.pdf

APT15GF170BR
APT15GF170BR

TYPICAL PERFORMANCE CURVES APT15GP60BDQ1APT15GP60BDQ1600V POWER MOS 7 IGBTTO-247The POWER MOS 7 IGBT is a new generation of high voltage power IGBTs.Using Punch Through Technology this IGBT is ideal for many high frequency,high voltage switching applications and has been optimized for high frequencyswitchmode power supplies. GCE Low Conduction Loss 100 kHz ope

 8.6. Size:24K  apt
apt15gt60br.pdf

APT15GF170BR
APT15GF170BR

APT15GT60BR600V 31AThunderbolt IGBTTO-247The Thunderbolt IGBT is a new generation of high voltage power IGBTs.Using Non-Punch Through Technology the Thunderbolt IGBT offers superiorruggedness and ultrafast switching speed.G Low Forward Voltage Drop High Freq. Switching to 150KHzCCE Low Tail Current Ultra Low Leakage Current Avalanche Rated

 8.7. Size:86K  apt
apt15gp60b.pdf

APT15GF170BR
APT15GF170BR

APT15GP60B600V POWER MOS 7 IGBTTO-247The POWER MOS 7 IGBT is a new generation of high voltage power IGBTs.Using Punch Through Technology this IGBT is ideal for many high frequency,high voltage switching applications and has been optimized for high frequencyswitchmode power supplies. GCE Low Conduction Loss 100 kHz operation @ 400V, 19AC Low Gate Charge

 8.8. Size:126K  apt
apt15gp60bdf1.pdf

APT15GF170BR
APT15GF170BR

APT15GP60BDF1600V POWER MOS 7 IGBTTO-247The POWER MOS 7 IGBT is a new generation of high voltage power IGBTs.Using Punch Through Technology this IGBT is ideal for many high frequency,high voltage switching applications and has been optimized for high frequencyswitchmode power supplies. GCE Low Conduction Loss 100 kHz operation @ 400V, 19AC Low Gate Charge

 8.9. Size:395K  apt
apt15gt60brg.pdf

APT15GF170BR
APT15GF170BR

TYPICAL PERFORMANCE CURVES APT15GT60BR(G) 600V APT15GT60BR APT15GT60BRG**G Denotes RoHS Compliant, Pb Free Terminal Finish.Thunderbolt IGBTThe Thunderblot IGBT is a new generation of high voltage power IGBTs. Using Non- Punch Through Technology, the Thunderblot IGBT offers superior ruggedness and ultrafast switching speed.GCE Low Forward Voltage Drop Hig

 8.10. Size:253K  apt
apt15gp60bdq1.pdf

APT15GF170BR
APT15GF170BR

TYPICAL PERFORMANCE CURVES APT15GP60BDQ1APT15GP60BDQ1600V POWER MOS 7 IGBTTO-247The POWER MOS 7 IGBT is a new generation of high voltage power IGBTs.Using Punch Through Technology this IGBT is ideal for many high frequency,high voltage switching applications and has been optimized for high frequencyswitchmode power supplies. GCE Low Conduction Loss 100 kHz ope

 8.11. Size:1011K  apt
apt15gt120brdq1g.pdf

APT15GF170BR
APT15GF170BR

1200V APT15GT120BRDQ1 APT15GT120BRDQ1G**G Denotes RoHS Compliant, Pb Free Terminal Finish.Thunderbolt IGBTThe Thunderblot IGBT is a new generation of high voltage power IGBTs. Using Non- Punch Through Technology, the Thunderblot IGBT offers superior ruggedness and ultrafast switching speed. GCE Low Forward Voltage Drop High Freq. Switching to

 8.12. Size:462K  apt
apt15gt60brdq1g.pdf

APT15GF170BR
APT15GF170BR

TYPICAL PERFORMANCE CURVES APT15GT60BRDQ1(G) 600V APT15GT60BRDQ1 APT15GT60BRDQ1G**G Denotes RoHS Compliant, Pb Free Terminal Finish.Thunderbolt IGBTThe Thunderblot IGBT is a new generation of high voltage power IGBTs. Using Non- Punch Through Technology, the Thunderblot IGBT offers superior ruggedness and ultrafast switching speed.GCE Low Forward Voltage Dro

 8.13. Size:191K  apt
apt15gp90bdf1.pdf

APT15GF170BR
APT15GF170BR

TYPICAL PERFORMANCE CURVES APT15GP90BDF1APT15GP90BDF1900V POWER MOS 7 IGBTTO-247The POWER MOS 7 IGBT is a new generation of high voltage power IGBTs.Using Punch Through Technology this IGBT is ideal for many high frequency,high voltage switching applications and has been optimized for high frequencyswitchmode power supplies. GCEC Low Conduction Loss 100 kHz

 8.14. Size:206K  apt
apt15gp60kg.pdf

APT15GF170BR
APT15GF170BR

APT15GP60K600V POWER MOS 7 IGBTTO-220The POWER MOS 7 IGBT is a new generation of high voltage power IGBTs.Using Punch Through Technology this IGBT is ideal for many high frequency,high voltage switching applications and has been optimized for high frequencyswitchmode power supplies.G Low Conduction Loss 100 kHz operation @ 400V, 19ACCE Low Gate Charge

 8.15. Size:160K  apt
apt15gp90k.pdf

APT15GF170BR
APT15GF170BR

TYPICAL PERFORMANCE CURVES APT15GP90KAPT15GP90K900V POWER MOS 7 IGBTTO-220The POWER MOS 7 IGBT is a new generation of high voltage power IGBTs.Using Punch Through Technology this IGBT is ideal for many high frequency,high voltage switching applications and has been optimized for high frequencyswitchmode power supplies.GCE Low Conduction Loss 100 kHz operatio

 8.16. Size:400K  apt
apt15gp90kg.pdf

APT15GF170BR
APT15GF170BR

TYPICAL PERFORMANCE CURVES APT15GP90K(G) 900V APT15GP90K APT15GP90KG**G Denotes RoHS Compliant, Pb Free Terminal Finish.POWER MOS 7 IGBTTO-220The POWER MOS 7 IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for high frequency swit

 8.17. Size:331K  apt
apt15gt60krg.pdf

APT15GF170BR
APT15GF170BR

TYPICAL PERFORMANCE CURVES APT15GT60KR(G) 600V APT15GT60KR APT15GT60KRG**G Denotes RoHS Compliant, Pb Free Terminal Finish.Thunderbolt IGBTTO-220The Thunderblot IGBT is a new generation of high voltage power IGBTs. Using Non- Punch Through Technology, the Thunderblot IGBT offers superior ruggedness and ultrafast switching speed. Low Forward Voltage Drop High

 8.18. Size:424K  apt
apt15gp90bdq1g.pdf

APT15GF170BR
APT15GF170BR

TYPICAL PERFORMANCE CURVES APT15GP90BDQ1(G) 900V APT15GP90BDQ1 APT15GP90BDQ1G**G Denotes RoHS Compliant, Pb Free Terminal Finish.POWER MOS 7 IGBTThe POWER MOS 7 IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for high frequency swi

 8.19. Size:25K  apt
apt15gt60kr.pdf

APT15GF170BR
APT15GF170BR

APT15GT60KR600V 31AThunderbolt IGBTTO-220The Thunderbolt IGBT is a new generation of high voltage power IGBTs.Using Non-Punch Through Technology the Thunderbolt IGBT offers superiorruggedness and ultrafast switching speed.GC Low Forward Voltage Drop High Freq. Switching to 150KHz EC Low Tail Current Ultra Low Leakage Current Avalanche Rated

 8.20. Size:780K  apt
apt15gt120brg.pdf

APT15GF170BR
APT15GF170BR

1200V APT15GT120BR APT15GT120BRG**G Denotes RoHS Compliant, Pb Free Terminal Finish.Thunderbolt IGBTThe Thunderblot IGBT is a new generation of high voltage power IGBTs. Using Non- Punch Through Technology, the Thunderblot IGBT offers superior ruggedness and ultrafast switching speed.GCE Low Forward Voltage Drop High Freq. Switching to 50KH

 8.21. Size:401K  apt
apt15gp90bg.pdf

APT15GF170BR
APT15GF170BR

TYPICAL PERFORMANCE CURVES APT15GP90B(G) 900V APT15GP90B APT15GP90BG**G Denotes RoHS Compliant, Pb Free Terminal Finish.POWER MOS 7 IGBTThe POWER MOS 7 IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for high frequency switchmode p

 8.22. Size:86K  apt
apt15gp60k.pdf

APT15GF170BR
APT15GF170BR

APT15GP60K600V POWER MOS 7 IGBTTO-220The POWER MOS 7 IGBT is a new generation of high voltage power IGBTs.Using Punch Through Technology this IGBT is ideal for many high frequency,high voltage switching applications and has been optimized for high frequencyswitchmode power supplies.G Low Conduction Loss 100 kHz operation @ 400V, 19ACCE Low Gate Charge

 8.23. Size:224K  apt
apt15gn120bdq1g.pdf

APT15GF170BR
APT15GF170BR

TYPICAL PERFORMANCE CURVES APT15GN120BDQ1(G) 1200V APT15GN120BDQ1 APT15GN120BDQ1G**G Denotes RoHS Compliant, Pb Free Terminal Finish.Utilizing the latest Field Stop and Trench Gate technologies, these IGBT's have ultra low VCE(ON) and are ideal for low frequency applications that require absolute minimum conduction loss. Easy paralleling is a result of very tight parameter dis

 8.24. Size:265K  microsemi
apt15gp60bg.pdf

APT15GF170BR
APT15GF170BR

APT15GP60BAPT15GP60S600V POWER MOS 7 IGBTThe POWER MOS 7 IGBT is a new generation of high voltage power IGBTs.Using Punch Through Technology this IGBT is ideal for many high frequency,high voltage switching applications and has been optimized for high frequencyswitchmode power supplies. Low Conduction Loss 100 kHz operation @ 400V, 19AC Low Gate Charge 20

 8.25. Size:202K  microsemi
apt15gp60bdlg.pdf

APT15GF170BR
APT15GF170BR

APT15GP60BDL(G)600V, 15A, VCE(ON) = 2.2V TypicalResonant Mode Combi IGBTThe POWER MOS 7 IGBT used in this resonant mode combi is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for high frequency switchmode power supplies.Features Typical Applicat

 8.26. Size:118K  microsemi
apt15gt120srg.pdf

APT15GF170BR
APT15GF170BR

TYPICAL PERFORMANCE CURVESAPT15GT120BR_SR(G)APT15GT120BR APT15GT120SR APT15GT120BR(G) APT15GT120SR(G) 1200V *G Denotes RoHS Compliant, Pb Free Terminal Finish. Thunderbolt IGBT(B)D3PAKThe Thunderblot IGBT is a new generation of high voltage power IGBTs. Using Non- Punch (S)Through Technology, the Thunderblot IGBT offers superior ruggedness and ultrafast Cswitchi

 8.27. Size:265K  microsemi
apt15gp60s.pdf

APT15GF170BR
APT15GF170BR

APT15GP60BAPT15GP60S600V POWER MOS 7 IGBTThe POWER MOS 7 IGBT is a new generation of high voltage power IGBTs.Using Punch Through Technology this IGBT is ideal for many high frequency,high voltage switching applications and has been optimized for high frequencyswitchmode power supplies. Low Conduction Loss 100 kHz operation @ 400V, 19AC Low Gate Charge 20

 8.28. Size:160K  microsemi
apt15gn120sdq1g.pdf

APT15GF170BR
APT15GF170BR

TYPICAL PERFORMANCE CURVESAPT15GN120BD_SDQ1(G)APT15GN120BDQ1 APT15GN120SDQ1 APT15GN120BDQ1(G) APT15GN120SDQ1(G)1200V *G Denotes RoHS Compliant, Pb Free Terminal Finish.Utilizing the latest Field Stop and Trench Gate technologies, these IGBT's have ultra (B)low VCE(ON) and are ideal for low frequency applications that require absolute minimum conduction loss. Easy paralleling

Другие IGBT... HCKZ75N65BH2 , IGC07T120T8L , IGC07T120T6L , APT100GF60LR , APT11GF120BRD , IGC07R60DE , IGC07R60D , IGC06R60DE , RJP6065DPM , IGC03R60D , IGC03R60DE , IGC04R60D , IGC04R60DE , IGC05R60D , IGC05R60DE , IGC06R60D , IGC11T120T8L .

 

 
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