MGP11N60ED - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

MGP11N60ED Datasheet (PDF)

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MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MGP11N60ED/DDesigner's Data SheetMGP11N60EDInsulated Gate Bipolar Transistorwith Anti-Parallel DiodeNChannel EnhancementMode Silicon GateIGBT & DIODE IN TO22011 A @ 90CThis Insulated Gate Bipolar Transistor (IGBT) is copackaged15 A @ 25Cwith a soft recovery ultrafast rectifier and uses an a

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MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MGP11N60E/DDesigner's Data SheetMGP11N60EInsulated Gate Bipolar TransistorNChannel EnhancementMode Silicon GateThis Insulated Gate Bipolar Transistor (IGBT) uses an advancedIGBT IN TO220termination scheme to provide an enhanced and reliable high11 A @ 90Cvoltageblocking capability. Its new 600 V I

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MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MGP11N60DE/DProduct Preview Data SheetMGP11N60DEInsulated Gate Bipolar Transistorwith Anti-Parallel DiodeIGBT & DIODE IN TO220NChannel Enhancement Mode Silicon Gate11 A @ 90CThis Insulated Gate Bipolar Transistor (IGBT) is copackaged 15 A @ 25Cwith a soft recovery ultrafast rectifier and uses an ad

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