MGP11N60ED - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: MGP11N60ED
Tipo de transistor: IGBT + Diode + Built-in Zener Diodes
Polaridad de transistor: N
ESPECIFICACIONES TECNICAS
Pcⓘ - Máxima potencia disipada: 96 W
|Vce|ⓘ - Tensión máxima colector-emisor: 600 V
|Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
|Ic|ⓘ - Colector de Corriente Continua a 25℃: 15 A
|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 1.6 V @25℃
|VGEth|ⓘ - Tensión máxima de puerta-umbral: 8 V
Tjⓘ - Temperatura máxima de unión: 150 ℃
trⓘ - Tiempo de subida, typ: 34 nS
Coesⓘ - Capacitancia de salida, typ: 81 pF
Qgⓘ - Carga total de la puerta, typ: 39.2 nC
Paquete / Cubierta: TO220
Búsqueda de reemplazo de MGP11N60ED IGBT
MGP11N60ED Datasheet (PDF)
mgp11n60ed.pdf

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MGP11N60ED/DDesigner's Data SheetMGP11N60EDInsulated Gate Bipolar Transistorwith Anti-Parallel DiodeNChannel EnhancementMode Silicon GateIGBT & DIODE IN TO22011 A @ 90CThis Insulated Gate Bipolar Transistor (IGBT) is copackaged15 A @ 25Cwith a soft recovery ultrafast rectifier and uses an a
mgp11n60erev0.pdf

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MGP11N60E/DDesigner's Data SheetMGP11N60EInsulated Gate Bipolar TransistorNChannel EnhancementMode Silicon GateThis Insulated Gate Bipolar Transistor (IGBT) uses an advancedIGBT IN TO220termination scheme to provide an enhanced and reliable high11 A @ 90Cvoltageblocking capability. Its new 600 V I
mgp11n60de.pdf

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MGP11N60DE/DProduct Preview Data SheetMGP11N60DEInsulated Gate Bipolar Transistorwith Anti-Parallel DiodeIGBT & DIODE IN TO220NChannel Enhancement Mode Silicon Gate11 A @ 90CThis Insulated Gate Bipolar Transistor (IGBT) is copackaged 15 A @ 25Cwith a soft recovery ultrafast rectifier and uses an ad
Otros transistores... MDI150-12A4 , MDI200-12A4 , MDI300-12A4 , MDI550-12A4 , MDI75-12A3 , MGB15N35CLT4 , MGB15N40CL , MGP11N60E , SGT40N60NPFDPN , MGP14N60E , MGP15N35CL , MGP15N38CL , MGP15N40CL , MGP15N43CL , MGP15N60U , MGP20N14CL , MGP20N35CL .
History: MMG25H120XT6TC | APT40GT60BR | MMG100D170B6TC | GT20D101
History: MMG25H120XT6TC | APT40GT60BR | MMG100D170B6TC | GT20D101



Liste
Recientemente añadidas las descripciónes de los transistores
IGBT: JJT40N120SE | JJT40N120HE | JJT30N65UE | JJT30N65SY | JJT30N65SS | JJT30N65SE | JJT40N65UH | JJT40N65UE | JJT40N65LE | JJT40N65HE | JJT40N135UE
Popular searches
2sc1226 | 2sd180 | 2sd235 | k3502 datasheet | p0903bdg datasheet | 2sa722 | f1010e mosfet datasheet | 2sa566