MGP11N60ED Todos los transistores

 

MGP11N60ED IGBT Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: MGP11N60ED

Tipo de transistor: IGBT

Polaridad de transistor: N

ESPECIFICACIONES TECNICAS

Pcⓘ - Máxima potencia disipada: 96 W

|Vce|ⓘ - Tensión máxima colector-emisor: 600 V

|Vge|ⓘ - Tensión máxima puerta-emisor: 20 V

|Ic|ⓘ - Colector de Corriente Continua a 25℃: 15 A

Tjⓘ - Temperatura máxima de unión: 150 ℃

CARACTERÍSTICAS ELÉCTRICAS

|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 1.6 V @25℃

trⓘ - Tiempo de subida, typ: 34 nS

Coesⓘ - Capacitancia de salida, typ: 81 pF

Encapsulados: TO220

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MGP11N60ED datasheet

 ..1. Size:150K  motorola
mgp11n60ed.pdf pdf_icon

MGP11N60ED

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MGP11N60ED/D Designer's Data Sheet MGP11N60ED Insulated Gate Bipolar Transistor with Anti-Parallel Diode N Channel Enhancement Mode Silicon Gate IGBT & DIODE IN TO 220 11 A @ 90 C This Insulated Gate Bipolar Transistor (IGBT) is co packaged 15 A @ 25 C with a soft recovery ultra fast rectifier and uses an a

 5.1. Size:123K  motorola
mgp11n60erev0.pdf pdf_icon

MGP11N60ED

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MGP11N60E/D Designer's Data Sheet MGP11N60E Insulated Gate Bipolar Transistor N Channel Enhancement Mode Silicon Gate This Insulated Gate Bipolar Transistor (IGBT) uses an advanced IGBT IN TO 220 termination scheme to provide an enhanced and reliable high 11 A @ 90 C voltage blocking capability. Its new 600 V I

 6.1. Size:107K  motorola
mgp11n60de.pdf pdf_icon

MGP11N60ED

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MGP11N60DE/D Product Preview Data Sheet MGP11N60DE Insulated Gate Bipolar Transistor with Anti-Parallel Diode IGBT & DIODE IN TO 220 N Channel Enhancement Mode Silicon Gate 11 A @ 90 C This Insulated Gate Bipolar Transistor (IGBT) is co packaged 15 A @ 25 C with a soft recovery ultra fast rectifier and uses an ad

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