MGP11N60ED - аналоги, параметры транзистора - Справочник транзисторов

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MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MGP11N60ED/D Designer's Data Sheet MGP11N60ED Insulated Gate Bipolar Transistor with Anti-Parallel Diode N Channel Enhancement Mode Silicon Gate IGBT & DIODE IN TO 220 11 A @ 90 C This Insulated Gate Bipolar Transistor (IGBT) is co packaged 15 A @ 25 C with a soft recovery ultra fast rectifier and uses an a

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MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MGP11N60E/D Designer's Data Sheet MGP11N60E Insulated Gate Bipolar Transistor N Channel Enhancement Mode Silicon Gate This Insulated Gate Bipolar Transistor (IGBT) uses an advanced IGBT IN TO 220 termination scheme to provide an enhanced and reliable high 11 A @ 90 C voltage blocking capability. Its new 600 V I

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MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MGP11N60DE/D Product Preview Data Sheet MGP11N60DE Insulated Gate Bipolar Transistor with Anti-Parallel Diode IGBT & DIODE IN TO 220 N Channel Enhancement Mode Silicon Gate 11 A @ 90 C This Insulated Gate Bipolar Transistor (IGBT) is co packaged 15 A @ 25 C with a soft recovery ultra fast rectifier and uses an ad

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