MGP15N35CL - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

MGP15N35CL,MGB15N35CL,MGC15N35CLInternally ClampedN-Channel IGBThttp://onsemi.comThis Logic Level Insulated Gate Bipolar Transistor (IGBT) featuresmonolithic circuitry integrating ESD and OverVoltage clampedNCHANNEL IGBTprotection for use in inductive coil drivers applications. Primary usesinclude Ignition, Direct Fuel Injection, or wherever high voltage and15 A, 350

MGP15N35CL,MGB15N35CLPreferred DeviceIgnition IGBT15 Amps, 350 VoltsN-Channel TO-220 and D2PAKhttp://onsemi.comThis Logic Level Insulated Gate Bipolar Transistor (IGBT) featuresmonolithic circuitry integrating ESD and Over-Voltage clamped15 AMPERESprotection for use in inductive coil drivers applications. Primary usesinclude Ignition, Direct Fuel Injection, or wherever hig

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MGP15N60U/DDesigner's Data SheetMGP15N60UInsulated Gate Bipolar TransistorNChannel EnhancementMode Silicon GateThis Insulated Gate Bipolar Transistor (IGBT) uses an advancedIGBT IN TO220termination scheme to provide an enhanced and reliable high15 A @ 90Cvoltageblocking capability. It also provide

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MGP15N60U/DProduct PreviewMGP15N60UInsulated Gate Bipolar TransistorNChannel EnhancementMode Silicon GateThis Insulated Gate Bipolar Transistor (IGBT) uses an advancedIGBT IN TO220termination scheme to provide an enhanced and reliable high15 A @ 90Cvoltageblocking capability. It also provides fast sw

MGP15N40CL,MGB15N40CLPreferred DeviceIgnition IGBT15 Amps, 410 VoltsN-Channel TO-220 and D2PAKhttp://onsemi.comThis Logic Level Insulated Gate Bipolar Transistor (IGBT) features15 AMPERESmonolithic circuitry integrating ESD and Over-Voltage clampedprotection for use in inductive coil drivers applications. Primary uses410 VOLTS (Clamped)include Ignition, Direct Fuel Injec