MGP15N35CL - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: MGP15N35CL
Tipo de transistor: IGBT + Built-in Zener Diodes
Polaridad de transistor: N
ESPECIFICACIONES TECNICAS
Pcⓘ - Máxima potencia disipada: 136 W
|Vce|ⓘ - Tensión máxima colector-emisor: 380 V
|Vge|ⓘ - Tensión máxima puerta-emisor: 22 V
|Ic|ⓘ - Colector de Corriente Continua a 25℃: 15 A
|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 1.8(max) V @25℃
|VGEth|ⓘ - Tensión máxima de puerta-umbral: 2.1 V
Tjⓘ - Temperatura máxima de unión: 175 ℃
trⓘ - Tiempo de subida, typ: 5000 nS
Coesⓘ - Capacitancia de salida, typ: 130 pF
Qgⓘ - Carga total de la puerta, typ: TBD nC
Paquete / Cubierta: TO220
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MGP15N35CL Datasheet (PDF)
mgb15n35clt4 mgp15n35cl.pdf
MGP15N35CL,MGB15N35CL,MGC15N35CLInternally ClampedN-Channel IGBThttp://onsemi.comThis Logic Level Insulated Gate Bipolar Transistor (IGBT) featuresmonolithic circuitry integrating ESD and OverVoltage clampedNCHANNEL IGBTprotection for use in inductive coil drivers applications. Primary usesinclude Ignition, Direct Fuel Injection, or wherever high voltage and15 A, 350
mgp15n35cl-d.pdf
MGP15N35CL,MGB15N35CLPreferred DeviceIgnition IGBT15 Amps, 350 VoltsN-Channel TO-220 and D2PAKhttp://onsemi.comThis Logic Level Insulated Gate Bipolar Transistor (IGBT) featuresmonolithic circuitry integrating ESD and Over-Voltage clamped15 AMPERESprotection for use in inductive coil drivers applications. Primary usesinclude Ignition, Direct Fuel Injection, or wherever hig
mgp15n60u.pdf
MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MGP15N60U/DDesigner's Data SheetMGP15N60UInsulated Gate Bipolar TransistorNChannel EnhancementMode Silicon GateThis Insulated Gate Bipolar Transistor (IGBT) uses an advancedIGBT IN TO220termination scheme to provide an enhanced and reliable high15 A @ 90Cvoltageblocking capability. It also provide
mgp15n60urev0.pdf
MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MGP15N60U/DProduct PreviewMGP15N60UInsulated Gate Bipolar TransistorNChannel EnhancementMode Silicon GateThis Insulated Gate Bipolar Transistor (IGBT) uses an advancedIGBT IN TO220termination scheme to provide an enhanced and reliable high15 A @ 90Cvoltageblocking capability. It also provides fast sw
mgp15n40cl mgb15n40cl.pdf
MGP15N40CL,MGB15N40CLPreferred DeviceIgnition IGBT15 Amps, 410 VoltsN-Channel TO-220 and D2PAKhttp://onsemi.comThis Logic Level Insulated Gate Bipolar Transistor (IGBT) features15 AMPERESmonolithic circuitry integrating ESD and Over-Voltage clampedprotection for use in inductive coil drivers applications. Primary uses410 VOLTS (Clamped)include Ignition, Direct Fuel Injec
Otros transistores... MDI300-12A4 , MDI550-12A4 , MDI75-12A3 , MGB15N35CLT4 , MGB15N40CL , MGP11N60E , MGP11N60ED , MGP14N60E , FGA25N120ANTD , MGP15N38CL , MGP15N40CL , MGP15N43CL , MGP15N60U , MGP20N14CL , MGP20N35CL , MGP20N40CL , MGP20N60U .
Liste
Recientemente añadidas las descripciónes de los transistores
IGBT: AOTS40B65H1 | AOTF8B65MQ1 | AOTF5B65M2 | AOTF5B65M1 | AOTF20B65M2 | AOTF20B65M1 | AOTF20B65LN2 | AOTF15B65MQ1 | AOTF15B65M3 | AOTF15B65M2 | AOTF15B60D2