MGP15N35CL Datasheet and Replacement
Type Designator: MGP15N35CL
Type: IGBT
Type of IGBT Channel: N
Pcⓘ - Maximum Power Dissipation: 136 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 380 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 22 V
|Ic|ⓘ - Maximum Collector Current: 15 A @25℃
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.8(max) V @25℃
Tjⓘ - Maximum Junction Temperature: 175 ℃
trⓘ - Rise Time, typ: 5000 nS
Coesⓘ - Output Capacitance, typ: 130 pF
Package: TO220
- IGBT Cross-Reference
MGP15N35CL Datasheet (PDF)
mgb15n35clt4 mgp15n35cl.pdf

MGP15N35CL,MGB15N35CL,MGC15N35CLInternally ClampedN-Channel IGBThttp://onsemi.comThis Logic Level Insulated Gate Bipolar Transistor (IGBT) featuresmonolithic circuitry integrating ESD and OverVoltage clampedNCHANNEL IGBTprotection for use in inductive coil drivers applications. Primary usesinclude Ignition, Direct Fuel Injection, or wherever high voltage and15 A, 350
mgp15n35cl-d.pdf

MGP15N35CL,MGB15N35CLPreferred DeviceIgnition IGBT15 Amps, 350 VoltsN-Channel TO-220 and D2PAKhttp://onsemi.comThis Logic Level Insulated Gate Bipolar Transistor (IGBT) featuresmonolithic circuitry integrating ESD and Over-Voltage clamped15 AMPERESprotection for use in inductive coil drivers applications. Primary usesinclude Ignition, Direct Fuel Injection, or wherever hig
Datasheet: MDI300-12A4 , MDI550-12A4 , MDI75-12A3 , MGB15N35CLT4 , MGB15N40CL , MGP11N60E , MGP11N60ED , MGP14N60E , BT40T60ANF , MGP15N38CL , MGP15N40CL , MGP15N43CL , MGP15N60U , MGP20N14CL , MGP20N35CL , MGP20N40CL , MGP20N60U .
History: HM20N120T | FGA5065ADF | SGP07N120 | 1MBI400N-120 | IGW50N60H3 | IXGT72N60B3 | IXBX55N300
Keywords - MGP15N35CL transistor datasheet
MGP15N35CL cross reference
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History: HM20N120T | FGA5065ADF | SGP07N120 | 1MBI400N-120 | IGW50N60H3 | IXGT72N60B3 | IXBX55N300



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