All IGBT. MGP15N35CL Datasheet

 

MGP15N35CL IGBT. Datasheet pdf. Equivalent

Type Designator: MGP15N35CL

Type of IGBT Channel: N-Channel

Maximum Power Dissipation (Pc), W: 136W

Maximum Collector-Emitter Voltage |Vce|, V: 380V

Collector-Emitter saturation Voltage |Vcesat|, V: 1.8V

Maximum Gate-Emitter Voltage |Veg|, V: 22V

Maximum Collector Current |Ic|, A: 15A

Maximum Junction Temperature (Tj), °C: 175

Rise Time, nS: 13000

Maximum Collector Capacity (Cc), pF: 1000pF

Package: TO220

MGP15N35CL Transistor Equivalent Substitute - IGBT Cross-Reference Search

 

MGP15N35CL Datasheet (PDF)

1.1. mgp15n35cl-d.pdf Size:250K _onsemi

MGP15N35CL
MGP15N35CL

MGP15N35CL, MGB15N35CL Preferred Device Ignition IGBT 15 Amps, 350 Volts N-Channel TO-220 and D2PAK http://onsemi.com This Logic Level Insulated Gate Bipolar Transistor (IGBT) features monolithic circuitry integrating ESD and Over-Voltage clamped 15 AMPERES protection for use in inductive coil drivers applications. Primary uses include Ignition, Direct Fuel Injection, or wherever high v

4.1. mgp15n60urev0.pdf Size:120K _motorola

MGP15N35CL
MGP15N35CL

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MGP15N60U/D Product Preview MGP15N60U Insulated Gate Bipolar Transistor N–Channel Enhancement–Mode Silicon Gate This Insulated Gate Bipolar Transistor (IGBT) uses an advanced IGBT IN TO–220 termination scheme to provide an enhanced and reliable high 15 A @ 90°C voltage–blocking capability. It also provides fast switching char

4.2. mgp15n60u.pdf Size:125K _motorola

MGP15N35CL
MGP15N35CL

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MGP15N60U/D Designer's? Data Sheet MGP15N60U Insulated Gate Bipolar Transistor N–Channel Enhancement–Mode Silicon Gate This Insulated Gate Bipolar Transistor (IGBT) uses an advanced IGBT IN TO–220 termination scheme to provide an enhanced and reliable high 15 A @ 90°C voltage–blocking capability. It also provides low on–volta

 4.3. mgp15n40cl mgb15n40cl.pdf Size:91K _onsemi

MGP15N35CL
MGP15N35CL

MGP15N40CL, MGB15N40CL Preferred Device Ignition IGBT 15 Amps, 410 Volts N-Channel TO-220 and D2PAK http://onsemi.com This Logic Level Insulated Gate Bipolar Transistor (IGBT) features 15 AMPERES monolithic circuitry integrating ESD and Over-Voltage clamped protection for use in inductive coil drivers applications. Primary uses 410 VOLTS (Clamped) include Ignition, Direct Fuel Injectio

Datasheet: MDI300-12A4 , MDI550-12A4 , MDI75-12A3 , MGB15N35CLT4 , MGB15N40CL , MGP11N60E , MGP11N60ED , MGP14N60E , HGTG30N60A4 , MGP15N38CL , MGP15N40CL , MGP15N43CL , MGP15N60U , MGP20N14CL , MGP20N35CL , MGP20N40CL , MGP20N60U .

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