MGP15N35CL Spec and Replacement, IGBT Equivalent Finder, Cross Reference

MGP15N35CL Specs and Replacement

Type Designator: MGP15N35CL

Type: IGBT

Type of IGBT Channel: N

Absolute Maximum Ratings

Pc ⓘ - Maximum Power Dissipation: 136 W

|Vce|ⓘ - Maximum Collector-Emitter Voltage: 380 V

|Vge|ⓘ - Maximum Gate-Emitter Voltage: 22 V

|Ic| ⓘ - Maximum Collector Current: 15 A @25℃

Tj ⓘ - Maximum Junction Temperature: 175 ℃

Electrical Characteristics

|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.8(max) V @25℃

tr ⓘ - Rise Time, typ: 5000 nS

Coesⓘ - Output Capacitance, typ: 130 pF

Package: TO220

MGP15N35CL Substitution

- IGBT ⓘ Cross-Reference Search

MGP15N35CL datasheet

..1. Size:99K 1
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MGP15N35CL, MGB15N35CL, MGC15N35CL Internally Clamped N-Channel IGBT http //onsemi.com This Logic Level Insulated Gate Bipolar Transistor (IGBT) features monolithic circuitry integrating ESD and Over Voltage clamped N CHANNEL IGBT protection for use in inductive coil drivers applications. Primary uses include Ignition, Direct Fuel Injection, or wherever high voltage and 15 A, 350... See More ⇒

0.1. Size:250K onsemi
mgp15n35cl-d.pdf pdf_icon

MGP15N35CL, MGB15N35CL Preferred Device Ignition IGBT 15 Amps, 350 Volts N-Channel TO-220 and D2PAK http //onsemi.com This Logic Level Insulated Gate Bipolar Transistor (IGBT) features monolithic circuitry integrating ESD and Over-Voltage clamped 15 AMPERES protection for use in inductive coil drivers applications. Primary uses include Ignition, Direct Fuel Injection, or wherever hig... See More ⇒

7.1. Size:104K 1
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