MGP20N14CL Todos los transistores

 

MGP20N14CL - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: MGP20N14CL
   Tipo de transistor: IGBT + Built-in Zener Diodes
   Polaridad de transistor: N

ESPECIFICACIONES TECNICAS


   Pcⓘ - Máxima potencia disipada: 150 W
   |Vce|ⓘ - Tensión máxima colector-emisor: 135 V
   |Vge|ⓘ - Tensión máxima puerta-emisor: 10 V
   |Ic|ⓘ - Colector de Corriente Continua a 25℃: 20 A
   |VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 1.9(max) V @25℃
   |VGEth|ⓘ - Tensión máxima de puerta-umbral: 2 V
   Tjⓘ - Temperatura máxima de unión: 175 ℃
   Coesⓘ - Capacitancia de salida, typ: 182 pF
   Qgⓘ - Carga total de la puerta, typ: 14 nC
   Paquete / Cubierta: TO220
     - Selección de transistores por parámetros

 

MGP20N14CL Datasheet (PDF)

 ..1. Size:82K  motorola
 mgp20n14cl.pdf pdf_icon

MGP20N14CL

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MGP20N14CL/DProduct PreviewMGP20N14CLSMARTDISCRETESInternally Clamped, N-ChannelIGBT20 AMPERESThis Logic Level Insulated Gate Bipolar Transistor (IGBT)VOLTAGE CLAMPEDfeatures GateEmitter ESD protection, GateCollector overvoltageNCHANNEL IGBTprotection from SMARTDISCRETES monolithic circuitry for

 0.1. Size:77K  motorola
 mgp20n14clrev1.pdf pdf_icon

MGP20N14CL

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MGP20N14CL/DProduct PreviewMGP20N14CLSMARTDISCRETESInternally Clamped, N-ChannelIGBT20 AMPERESThis Logic Level Insulated Gate Bipolar Transistor (IGBT)VOLTAGE CLAMPEDfeatures GateEmitter ESD protection, GateCollector overvoltageNCHANNEL IGBTprotection from SMARTDISCRETES monolithic circuitry for

 8.1. Size:133K  motorola
 mgp20n40clrev1.pdf pdf_icon

MGP20N14CL

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MGP20N40CL/DAdvanced InformationMGP20N40CLSMARTDISCRETESInternally Clamped, N-ChannelIGBT20 AMPERESThis Logic Level Insulated Gate Bipolar Transistor (IGBT)VOLTAGE CLAMPEDfeatures GateEmitter ESD protection, GateCollector overvoltageNCHANNEL IGBTprotection from SMARTDISCRETES monolithic circuitr

 8.2. Size:200K  motorola
 mgp20n35clrev0xx.pdf pdf_icon

MGP20N14CL

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MGP20N35CL/DAdvanced InformationMGP20N35CLSMARTDISCRETESInternally Clamped, N-ChannelIGBT20 AMPERESThis Logic Level Insulated Gate Bipolar Transistor (IGBT)VOLTAGE CLAMPEDfeatures GateEmitter ESD protection, GateCollector overvoltageNCHANNEL IGBTprotection from SMARTDISCRETES monolithic circuitr

MOSTRAR MÁS

Otros transistores... MGP11N60E , MGP11N60ED , MGP14N60E , MGP15N35CL , MGP15N38CL , MGP15N40CL , MGP15N43CL , MGP15N60U , IRG7IC28U , MGP20N35CL , MGP20N40CL , MGP20N60U , MGP21N60E , MGP4N60E , MGP4N60ED , MGP7N60E , MGP7N60ED .

History: IXGT28N30A | HIL40N120TF | IXGJ50N60B | IXSH15N120AU1

 

 
Back to Top

 


 
.