MGP4N60E IGBT Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: MGP4N60E
Tipo de transistor: IGBT
Polaridad de transistor: N
ESPECIFICACIONES TECNICAS
Pcⓘ - Máxima potencia disipada: 62.5 W
|Vce|ⓘ - Tensión máxima colector-emisor: 600 V
|Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
|Ic|ⓘ - Colector de Corriente Continua a 25℃: 6 A
Tjⓘ - Temperatura máxima de unión: 150 ℃
CARACTERÍSTICAS ELÉCTRICAS
|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 1.6 V @25℃
trⓘ - Tiempo de subida, typ: 30 nS
Coesⓘ - Capacitancia de salida, typ: 40 pF
Encapsulados: TO220
Búsqueda de reemplazo de MGP4N60E IGBT
- Selección ⓘ de transistores por parámetros
MGP4N60E datasheet
mgp4n60e.pdf
MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MGP4N60E/D Designer's Data Sheet MGP4N60E Insulated Gate Bipolar Transistor N Channel Enhancement Mode Silicon Gate This Insulated Gate Bipolar Transistor (IGBT) uses an advanced IGBT IN TO 220 termination scheme to provide an enhanced and reliable high 4.0 A @ 90 C voltage blocking capability. Its new 600 V IG
mgp4n60erev0.pdf
MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MGP4N60E/D Designer's Data Sheet MGP4N60E Insulated Gate Bipolar Transistor N Channel Enhancement Mode Silicon Gate This Insulated Gate Bipolar Transistor (IGBT) uses an advanced IGBT IN TO 220 termination scheme to provide an enhanced and reliable high 4.0 A @ 90 C voltage blocking capability. Its new 600 V IG
mgp4n60ed.pdf
MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MGP4N60ED/D Designer's Data Sheet MGP4N60ED Insulated Gate Bipolar Transistor with Anti-Parallel Diode N Channel Enhancement Mode Silicon Gate IGBT & DIODE IN TO 220 4.0 A @ 90 C This Insulated Gate Bipolar Transistor (IGBT) is co packaged 6.0 A @ 25 C with a soft recovery ultra fast rectifier and uses an a
Otros transistores... MGP15N40CL , MGP15N43CL , MGP15N60U , MGP20N14CL , MGP20N35CL , MGP20N40CL , MGP20N60U , MGP21N60E , SGT60N60FD1P7 , MGP4N60ED , MGP7N60E , MGP7N60ED , MGS05N60D , MGS13002D , MGV12N120D , MGW12N120 , MGW12N120D .
History: RGS80TSX2DHR | JT015N065CED | RGPR20NS43
History: RGS80TSX2DHR | JT015N065CED | RGPR20NS43
🌐 : EN ES РУ
Liste
Recientemente añadidas las descripciónes de los transistores
IGBT: JJT40N120SE | JJT40N120HE | JJT30N65UE | JJT30N65SY | JJT30N65SS | JJT30N65SE | JJT40N65UH | JJT40N65UE | JJT40N65LE | JJT40N65HE | JJT40N135UE
Popular searches
13009 datasheet | 3dd15d transistor | pa110bda | 2sb1243 | a1123 transistor | skd502t datasheet | svf7n65f | 2sc1419 datasheet