MGW12N120D IGBT Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: MGW12N120D
Tipo de transistor: IGBT
Polaridad de transistor: N
ESPECIFICACIONES TECNICAS
Pcⓘ - Máxima potencia disipada: 123 W
|Vce|ⓘ - Tensión máxima colector-emisor: 1200 V
|Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
|Ic|ⓘ - Colector de Corriente Continua a 25℃: 20 A
Tjⓘ - Temperatura máxima de unión: 150 ℃
CARACTERÍSTICAS ELÉCTRICAS
|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 2.71 V @25℃
trⓘ - Tiempo de subida, typ: 83 nS
Coesⓘ - Capacitancia de salida, typ: 126 pF
Encapsulados: TO247
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MGW12N120D datasheet
mgw12n120d.pdf
MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MGW12N120D/D Designer's Data Sheet MGW12N120D Insulated Gate Bipolar Transistor Motorola Preferred Device with Anti-Parallel Diode N Channel Enhancement Mode Silicon Gate IGBT & DIODE IN TO 247 12 A @ 90 C This Insulated Gate Bipolar Transistor (IGBT) is co packaged 20 A @ 25 C with a soft recovery ultra f
mgw12n120.pdf
MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MGW12N120/D Designer's Data Sheet MGW12N120 Insulated Gate Bipolar Transistor Motorola Preferred Device N Channel Enhancement Mode Silicon Gate This Insulated Gate Bipolar Transistor (IGBT) uses an advanced IGBT IN TO 247 termination scheme to provide an enhanced and reliable high 12 A @ 90 C voltage blocking
Otros transistores... MGP4N60E , MGP4N60ED , MGP7N60E , MGP7N60ED , MGS05N60D , MGS13002D , MGV12N120D , MGW12N120 , SGT40N60FD2PN , MGW14N60ED , MGW20N120 , MGW20N60D , MGW21N60ED , MGW30N60 , MGY20N120D , MGY25N120 , MGY25N120D .
History: SNG301010
History: SNG301010
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