MGW12N120D Todos los transistores

 

MGW12N120D - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: MGW12N120D
   Tipo de transistor: IGBT
   Polaridad de transistor: N

ESPECIFICACIONES TECNICAS


   Pcⓘ - Máxima potencia disipada: 123 W
   |Vce|ⓘ - Tensión máxima colector-emisor: 1200 V
   |Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
   |Ic|ⓘ - Colector de Corriente Continua a 25℃: 20 A
   |VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 2.71 V @25℃
   Tjⓘ - Temperatura máxima de unión: 150 ℃
   trⓘ - Tiempo de subida, typ: 83 nS
   Coesⓘ - Capacitancia de salida, typ: 126 pF
   Paquete / Cubierta: TO247
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MGW12N120D Datasheet (PDF)

 ..1. Size:213K  motorola
 mgw12n120d.pdf pdf_icon

MGW12N120D

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MGW12N120D/DDesigner's Data SheetMGW12N120DInsulated Gate Bipolar TransistorMotorola Preferred Devicewith Anti-Parallel DiodeNChannel EnhancementMode Silicon GateIGBT & DIODE IN TO24712 A @ 90CThis Insulated Gate Bipolar Transistor (IGBT) is copackaged20 A @ 25Cwith a soft recovery ultraf

 5.1. Size:228K  motorola
 mgw12n120.pdf pdf_icon

MGW12N120D

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MGW12N120/DDesigner's Data SheetMGW12N120Insulated Gate Bipolar TransistorMotorola Preferred DeviceNChannel EnhancementMode Silicon GateThis Insulated Gate Bipolar Transistor (IGBT) uses an advancedIGBT IN TO247termination scheme to provide an enhanced and reliable high12 A @ 90Cvoltageblocking

Otros transistores... MGP4N60E , MGP4N60ED , MGP7N60E , MGP7N60ED , MGS05N60D , MGS13002D , MGV12N120D , MGW12N120 , CRG60T60AN3H , MGW14N60ED , MGW20N120 , MGW20N60D , MGW21N60ED , MGW30N60 , MGY20N120D , MGY25N120 , MGY25N120D .

History: DG10X06T1 | KM435A | MGP21N60E | MGP15N38CL | IXGX32N170H1

 

 
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