NTE3320 Todos los transistores

 

NTE3320 - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: NTE3320
   Tipo de transistor: IGBT
   Polaridad de transistor: N

ESPECIFICACIONES TECNICAS


   Pcⓘ - Máxima potencia disipada: 240 W
   |Vce|ⓘ - Tensión máxima colector-emisor: 600 V
   |Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
   |Ic|ⓘ - Colector de Corriente Continua a 25℃: 50 A
   |VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 2 V @25℃
   Tjⓘ - Temperatura máxima de unión: 150 ℃
   trⓘ - Tiempo de subida, typ: 70 nS
   Paquete / Cubierta: TO3P

 Búsqueda de reemplazo de NTE3320 - IGBT

 

NTE3320 Datasheet (PDF)

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NTE3320

NTE3320 Insulated Gate Bipolar Transistor N-Channel Enhancement Mode, High Speed Switch Features D Fourth Generation IGBT D Enhancement Mode Type D High Speed D Low Switching Loss D Low Saturation Voltage Applications D High Power Switching Absolute Maximum Raings (TA = +25 C unless otherwise specified) Collector-Emitter Voltage, VCES . . . . . . . . . . . . . . . . . . . . . .

 8.1. Size:58K  1
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NTE3320

NTE3321 Insulated Gate Bipolar Transistor N-Channel Enhancement Mode, High Speed Switch TO3P Type Package Features D High Input Impedance D High Speed D Low Saturation Voltage D Enhancement Mode Applications D High Power Switching Absolute Maximum Ratings (TA = +25_C unless otherwise specified) Collector-Emitter Voltage, VCES . . . . . . . . . . . . . . . . . . . . . . . . . . .

 8.2. Size:45K  no
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NTE3320

NTE3323 Insulated Gate Bipolar Transistor N-Channel Enhancement Mode, High Speed Switch Features D High Input Impedance D High Speed D Low Saturation Voltage D Enhancement Mode Applications D High Power Switching D Motor Control Absolute Maximum Raings (TA = +25 C unless otherwise specified) Collector-Emitter Voltage, VCES . . . . . . . . . . . . . . . . . . . . . . . . . . . .

 8.3. Size:69K  no
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NTE3320

NTE3322 Insulated Gate Bipolar Transistor N-Channel Enhancement Mode, High Speed Switch TO3PBL Features D Enhancemnt Mode Type D FRD Included Bwetwen Emitter and Collector D High Speed D Low Saturation Voltage Applications D High Power Switching Absolute Maximum Raings (TA = +25 C unless otherwise specified) Collector-Emitter Voltage, VCES . . . . . . . . . . . . . . . . . . .

MOSTRAR MÁS

Otros transistores... MSAHX60F60A , MSAHX60F60B , MSAHX75L60C , MSAHX75L60D , MSAHZ52F120A , MSAHZ52F120B , NTE3311 , NTE3312 , IRG4PC50UD , NTE3321 , NTE3322 , NTE3323 , P12N60C3 , PPNGZ52F120A , PPNGZ52F120B , PPNHZ52F120A , PPNHZ52F120B .

 

 
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