NTE3320 - параметры транзистора, его аналоги, Даташиты

NTE3320 Datasheet (PDF)

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NTE3320Insulated Gate Bipolar TransistorN-Channel Enhancement Mode,High Speed SwitchFeatures:D Fourth Generation IGBTD Enhancement Mode TypeD High SpeedD Low Switching LossD Low Saturation VoltageApplications:D High Power SwitchingAbsolute Maximum Raings: (TA = +25C unless otherwise specified)Collector-Emitter Voltage, VCES . . . . . . . . . . . . . . . . . . . . . .

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NTE3321Insulated Gate Bipolar TransistorN-Channel Enhancement Mode,High Speed SwitchTO3P Type PackageFeatures:D High Input ImpedanceD High SpeedD Low Saturation VoltageD Enhancement ModeApplications:D High Power SwitchingAbsolute Maximum Ratings: (TA = +25_C unless otherwise specified)Collector-Emitter Voltage, VCES . . . . . . . . . . . . . . . . . . . . . . . . . . .

8.2. Size:45K no
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NTE3323Insulated Gate Bipolar TransistorN-Channel Enhancement Mode,High Speed SwitchFeatures:D High Input ImpedanceD High SpeedD Low Saturation VoltageD Enhancement ModeApplications:D High Power SwitchingD Motor ControlAbsolute Maximum Raings: (TA = +25C unless otherwise specified)Collector-Emitter Voltage, VCES . . . . . . . . . . . . . . . . . . . . . . . . . . . .

8.3. Size:69K no
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NTE3322Insulated Gate Bipolar TransistorN-Channel Enhancement Mode,High Speed SwitchTO3PBLFeatures:D Enhancemnt Mode TypeD FRD Included Bwetwen Emitter and CollectorD High SpeedD Low Saturation VoltageApplications:D High Power SwitchingAbsolute Maximum Raings: (TA = +25C unless otherwise specified)Collector-Emitter Voltage, VCES . . . . . . . . . . . . . . . . . . .

Другие IGBT... MSAHX60F60A , MSAHX60F60B , MSAHX75L60C , MSAHX75L60D , MSAHZ52F120A , MSAHZ52F120B , NTE3311 , NTE3312 , IRG4PC50UD , NTE3321 , NTE3322 , NTE3323 , P12N60C3 , PPNGZ52F120A , PPNGZ52F120B , PPNHZ52F120A , PPNHZ52F120B .