NTE3321 Todos los transistores

 

NTE3321 - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: NTE3321
   Tipo de transistor: IGBT
   Polaridad de transistor: N

ESPECIFICACIONES TECNICAS


   Pcⓘ - Máxima potencia disipada: 200 W
   |Vce|ⓘ - Tensión máxima colector-emisor: 600 V
   |Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
   |Ic|ⓘ - Colector de Corriente Continua a 25℃: 80 A
   |VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 2.5 V @25℃
   Tjⓘ - Temperatura máxima de unión: 150 ℃
   trⓘ - Tiempo de subida, typ: 300 nS
   Paquete / Cubierta: TO3P
     - Selección de transistores por parámetros

 

NTE3321 Datasheet (PDF)

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NTE3321

NTE3321Insulated Gate Bipolar TransistorN-Channel Enhancement Mode,High Speed SwitchTO3P Type PackageFeatures:D High Input ImpedanceD High SpeedD Low Saturation VoltageD Enhancement ModeApplications:D High Power SwitchingAbsolute Maximum Ratings: (TA = +25_C unless otherwise specified)Collector-Emitter Voltage, VCES . . . . . . . . . . . . . . . . . . . . . . . . . . .

 8.1. Size:45K  no
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NTE3321

NTE3323Insulated Gate Bipolar TransistorN-Channel Enhancement Mode,High Speed SwitchFeatures:D High Input ImpedanceD High SpeedD Low Saturation VoltageD Enhancement ModeApplications:D High Power SwitchingD Motor ControlAbsolute Maximum Raings: (TA = +25C unless otherwise specified)Collector-Emitter Voltage, VCES . . . . . . . . . . . . . . . . . . . . . . . . . . . .

 8.2. Size:69K  no
 nte3322.pdf pdf_icon

NTE3321

NTE3322Insulated Gate Bipolar TransistorN-Channel Enhancement Mode,High Speed SwitchTO3PBLFeatures:D Enhancemnt Mode TypeD FRD Included Bwetwen Emitter and CollectorD High SpeedD Low Saturation VoltageApplications:D High Power SwitchingAbsolute Maximum Raings: (TA = +25C unless otherwise specified)Collector-Emitter Voltage, VCES . . . . . . . . . . . . . . . . . . .

 8.3. Size:43K  no
 nte3320.pdf pdf_icon

NTE3321

NTE3320Insulated Gate Bipolar TransistorN-Channel Enhancement Mode,High Speed SwitchFeatures:D Fourth Generation IGBTD Enhancement Mode TypeD High SpeedD Low Switching LossD Low Saturation VoltageApplications:D High Power SwitchingAbsolute Maximum Raings: (TA = +25C unless otherwise specified)Collector-Emitter Voltage, VCES . . . . . . . . . . . . . . . . . . . . . .

MOSTRAR MÁS

Otros transistores... MSAHX60F60B , MSAHX75L60C , MSAHX75L60D , MSAHZ52F120A , MSAHZ52F120B , NTE3311 , NTE3312 , NTE3320 , STGW60V60DF , NTE3322 , NTE3323 , P12N60C3 , PPNGZ52F120A , PPNGZ52F120B , PPNHZ52F120A , PPNHZ52F120B , RCH10N35 .

History: APT150GN60LDQ4G | IXGT28N30 | NSGM150GB120B | SGB15N120 | IXGH12N100

 

 
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