IGC05R60DE IGBT Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: IGC05R60DE
Tipo de transistor: IGBT
Polaridad de transistor: N
|Vce|ⓘ - Tensión máxima colector-emisor: 600 V
|Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
|Ic|ⓘ - Colector de Corriente Continua a 25℃: 6 A
Tjⓘ - Temperatura máxima de unión: 175 ℃
CARACTERÍSTICAS ELÉCTRICAS
|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 1.65 V @25℃
Coesⓘ - Capacitancia de salida, typ: 24 pF
Encapsulados: CHIP
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IGC05R60DE datasheet
igc05r60de.pdf
IGC05R60DE TRENCHSTOPTM RC-Series for hard switching applications IGBT chip with monolithically integrated diode in packages offering space saving advantage Features TRENCHSTOPTM Reverse Conducting (RC) technology for 600V applications offering Optimised VCEsat and VF for low conduction losses Smooth switching performance leading to low EMI levels Very tight parameter dist
igc05r60d.pdf
IGC05R60D TRENCHSTOPTM RC-Series for hard switching applications IGBT chip with monolithically integrated diode in packages offering space saving advantage Features TRENCHSTOPTM Reverse Conducting (RC) technology for 600V applications offering Optimised VCEsat and VF for low conduction losses Smooth switching performance leading to low EMI levels Very tight param
sigc05t60snc.pdf
SIGC05T60SNC IGBT Chip in NPT-technology C FEATURES This chip is used for 600V NPT technology 100 m chip DuoPack SGP04N60 short circuit prove positive temperature coefficient G Applications E easy paralleling drives Chip Type VCE ICn Die Size Package Ordering Code Q67050-A4149- SIGC05T60SNC 600V 4A 2.29 x 2.29 mm2 sawn on foil A101
Otros transistores... IGC07R60D , IGC06R60DE , APT15GF170BR , IGC03R60D , IGC03R60DE , IGC04R60D , IGC04R60DE , IGC05R60D , IRG4PF50W , IGC06R60D , IGC11T120T8L , IGC100T65T8RM , IGC109T120T6RH , IGC109T120T6RL , IGC109T120T6RM , IGC10R60D , IGC10R60DE .
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