IGC05R60DE IGBT. Datasheet pdf. Equivalent
Type Designator: IGC05R60DE
Type: IGBT + Anti-Parallel Diode
Type of IGBT Channel: N
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic|ⓘ - Maximum Collector Current: 6 A @25℃
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.65 V @25℃
|VGEth|ⓘ - Maximum G-E Threshold Voltag: 5.7 V
Tjⓘ - Maximum Junction Temperature: 175 ℃
Coesⓘ - Output Capacitance, typ: 24 pF
Package: CHIP
IGC05R60DE Transistor Equivalent Substitute - IGBT Cross-Reference Search
IGC05R60DE Datasheet (PDF)
igc05r60de.pdf
IGC05R60DETRENCHSTOPTM RC-Series for hard switching applicationsIGBT chip with monolithically integrated diode in packages offering space saving advantageFeatures:TRENCHSTOPTM Reverse Conducting (RC) technology for600V applications offering: Optimised VCEsat and VF for low conduction losses Smooth switching performance leading to low EMI levels Very tight parameter dist
igc05r60d.pdf
IGC05R60D TRENCHSTOPTM RC-Series for hard switching applications IGBT chip with monolithically integrated diode in packages offering space saving advantage Features: TRENCHSTOPTM Reverse Conducting (RC) technology for 600V applications offering: Optimised VCEsat and VF for low conduction losses Smooth switching performance leading to low EMI levels Very tight param
sigc05t60snc.pdf
SIGC05T60SNC IGBT Chip in NPT-technology CFEATURES: This chip is used for: 600V NPT technology 100m chip DuoPack SGP04N60 short circuit prove positive temperature coefficient GApplications: E easy paralleling drives Chip Type VCE ICn Die Size Package Ordering Code Q67050-A4149-SIGC05T60SNC 600V 4A 2.29 x 2.29 mm2 sawn on foil A101
Datasheet: IGC07R60D , IGC06R60DE , APT15GF170BR , IGC03R60D , IGC03R60DE , IGC04R60D , IGC04R60DE , IGC05R60D , IKW40N65WR5 , IGC06R60D , IGC11T120T8L , IGC100T65T8RM , IGC109T120T6RH , IGC109T120T6RL , IGC109T120T6RM , IGC10R60D , IGC10R60DE .
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