SGH15N120RUF Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: SGH15N120RUF  📄📄 

Tipo de transistor: IGBT

Polaridad de transistor: N

ESPECIFICACIONES TECNICAS

Pcⓘ - Máxima potencia disipada: 180 W

|Vce|ⓘ - Tensión máxima colector-emisor: 1200 V

|Vge|ⓘ - Tensión máxima puerta-emisor: 25 V

|Ic|ⓘ - Colector de Corriente Continua a 25℃: 24 A

Tjⓘ - Temperatura máxima de unión: 150 ℃

CARACTERÍSTICAS ELÉCTRICAS

|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 2.3 V @25℃

trⓘ - Tiempo de subida, typ: 60 nS

Coesⓘ - Capacitancia de salida, typ: 135 pF

Encapsulados: TO3P

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SGH15N120RUF datasheet

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 sgh15n120ruf.pdf pdf_icon

SGH15N120RUF

IGBT SGH15N120RUF Short Circuit Rated IGBT General Description Features Fairchild's RUF series of Insulated Gate Bipolar Transistors Short circuit rated 10 s @ TC = 100 C, VGE = 15V (IGBTs) provide low conduction and switching losses as High speed switching well as short circuit ruggedness. The RUF series is Low saturation voltage VCE(sat) = 2.3 V @ IC = 15A designed fo

 0.1. Size:593K  fairchild semi
 sgh15n120rufd.pdf pdf_icon

SGH15N120RUF

September 2000 IGBT SGH15N120RUFD Short Circuit Rated IGBT General Description Features Fairchild's Insulated Gate Bipolar Transistor(IGBT) RUFD Short Circuit Rated 10 s @ TC = 100 C, VGE = 15V series provides low conduction and switching losses as well High Speed Switching as short circuit ruggedness. RUFD series is designed for Low Saturation Voltage VCE(sat) = 2.3 V

 8.1. Size:649K  fairchild semi
 sgh15n60rufd.pdf pdf_icon

SGH15N120RUF

March 2000 IGBT SGH15N60RUFD Short Circuit Rated IGBT General Description Features Fairchild's Insulated Gate Bipolar Transistor(IGBT) RUFD Short Circuit rated 10us @ TC = 100 C, VGE = 15V series provides low conduction and switching losses as well High Speed Switching as short circuit ruggedness. RUFD series is designed for Low Saturation Voltage VCE(sat) = 2.2 V @ IC =

 8.2. Size:268K  samsung
 sgh15n60rufd.pdf pdf_icon

SGH15N120RUF

CO-PAK IGBT SGH15N60RUFD FEATURES TO-3P * Short Circuit rated 10uS @Tc=100 * High Speed Switching * Low Saturation Voltage VCE(sat) = 2.0 V @ Ic=15A * High Input Impedance * CO-PAK, IGBT with FRD Trr = 42nS (Typ) C APPLICATIONS * AC & DC Motor controls G * General Purpose Inverters * Robotics , Servo Controls * Power Supply E * Lamp Ballast ABSOLUTE MAXIMUM RATINGS

MOSTRAR MÁS

Otros transistores... SGF40N60UFD, SGF5N150UF, SGF80N60UF, SGF80N60UFD, SGH10N120RUF, SGH10N120RUFD, SGH10N60RUFD, SGH13N60UFD, KGF75N65KDF, SGH15N120RUFD, SGH15N60RUFD, SGH20N120RUF, SGH20N120RUFD, SGH20N60RUFD, SGH23N60UFD, SGH25N120RUF, SGH30N60RUF