Справочник IGBT. SGH15N120RUF

 

SGH15N120RUF - IGBT справочник. Даташиты. Аналоги. Параметры и характеристики.


   Наименование: SGH15N120RUF
   Тип транзистора: IGBT
   Тип управляющего канала: N
   Pcⓘ - Максимальная рассеиваемая мощность: 180 W
   |Vce|ⓘ - Предельно-допустимое напряжение коллектор-эмиттер: 1200 V
   |Vge|ⓘ - Максимально допустимое напряжение эмиттер-затвор: 25 V
   |Ic|ⓘ - Максимальный постоянный ток коллектора: 24 A @25℃
   |VCEsat|ⓘ - Напряжение насыщения коллектор-эмиттер типовое: 2.3 V @25℃
   Tjⓘ - Максимальная температура перехода: 150 ℃
   trⓘ - Время нарастания типовое: 60 nS
   Coesⓘ - Выходная емкость, типовая: 135 pF
   Тип корпуса: TO3P

 Аналог (замена) для SGH15N120RUF

 

 

SGH15N120RUF Datasheet (PDF)

 ..1. Size:526K  1
 sgh15n120ruf.pdf

SGH15N120RUF SGH15N120RUF

IGBTSGH15N120RUFShort Circuit Rated IGBTGeneral Description FeaturesFairchild's RUF series of Insulated Gate Bipolar Transistors Short circuit rated 10s @ TC = 100C, VGE = 15V(IGBTs) provide low conduction and switching losses as High speed switchingwell as short circuit ruggedness. The RUF series is Low saturation voltage : VCE(sat) = 2.3 V @ IC = 15Adesigned fo

 0.1. Size:593K  fairchild semi
 sgh15n120rufd.pdf

SGH15N120RUF SGH15N120RUF

September 2000 IGBTSGH15N120RUFDShort Circuit Rated IGBTGeneral Description FeaturesFairchild's Insulated Gate Bipolar Transistor(IGBT) RUFD Short Circuit Rated 10s @ TC = 100C, VGE = 15Vseries provides low conduction and switching losses as well High Speed Switchingas short circuit ruggedness. RUFD series is designed for Low Saturation Voltage : VCE(sat) = 2.3 V

 8.1. Size:649K  fairchild semi
 sgh15n60rufd.pdf

SGH15N120RUF SGH15N120RUF

March 2000 IGBTSGH15N60RUFDShort Circuit Rated IGBTGeneral Description FeaturesFairchild's Insulated Gate Bipolar Transistor(IGBT) RUFD Short Circuit rated 10us @ TC = 100C, VGE = 15Vseries provides low conduction and switching losses as well High Speed Switchingas short circuit ruggedness. RUFD series is designed for Low Saturation Voltage : VCE(sat) = 2.2 V @ IC =

 8.2. Size:268K  samsung
 sgh15n60rufd.pdf

SGH15N120RUF SGH15N120RUF

CO-PAK IGBT SGH15N60RUFDFEATURESTO-3P* Short Circuit rated 10uS @Tc=100 * High Speed Switching* Low Saturation Voltage : VCE(sat) = 2.0 V @ Ic=15A* High Input Impedance* CO-PAK, IGBT with FRD : Trr = 42nS (Typ)CAPPLICATIONS* AC & DC Motor controlsG* General Purpose Inverters* Robotics , Servo Controls* Power Supply E* Lamp BallastABSOLUTE MAXIMUM RATINGS

 8.3. Size:613K  onsemi
 sgh15n60rufd.pdf

SGH15N120RUF SGH15N120RUF

IGBTSGH15N60RUFDShort Circuit Rated IGBTGeneral Description FeaturesFairchild's RUFD series of Insulated Gate Bipolar Short circuit rated 10us @ TC = 100C, VGE = 15VTransistors (IGBTs) provide low conduction and switching High speed switchinglosses as well as short circuit ruggedness. The RUFD Low saturation voltage : VCE(sat) = 2.2 V @ IC = 15Aseries is designed f

Другие IGBT... SGF40N60UFD , SGF5N150UF , SGF80N60UF , SGF80N60UFD , SGH10N120RUF , SGH10N120RUFD , SGH10N60RUFD , SGH13N60UFD , TGAN40N60FD , SGH15N120RUFD , SGH15N60RUFD , SGH20N120RUF , SGH20N120RUFD , SGH20N60RUFD , SGH23N60UFD , SGH25N120RUF , SGH30N60RUF .

 

 
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