SGH23N60UFD Todos los transistores

 

SGH23N60UFD - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: SGH23N60UFD
   Tipo de transistor: IGBT
   Polaridad de transistor: N

ESPECIFICACIONES TECNICAS


   Pcⓘ - Máxima potencia disipada: 100 W
   |Vce|ⓘ - Tensión máxima colector-emisor: 600 V
   |Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
   |Ic|ⓘ - Colector de Corriente Continua a 25℃: 23 A
   |VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 2.1 V @25℃
   Tjⓘ - Temperatura máxima de unión: 150 ℃
   trⓘ - Tiempo de subida, typ: 27 nS
   Coesⓘ - Capacitancia de salida, typ: 100 pF
   Paquete / Cubierta: TO3P
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SGH23N60UFD Datasheet (PDF)

 ..1. Size:627K  fairchild semi
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SGH23N60UFD

September 2000 IGBTSGH23N60UFDUltra-Fast IGBTGeneral Description FeaturesFairchild's Insulated Gate Bipolar Transistor(IGBT) UFD High Speed Switchingseries provides low conduction and switching losses. Low Saturation Voltage : VCE(sat) = 2.1 V @ IC = 12AUFD series is designed for the applications such as motor High Input Impedancecontrol and general inverters where

 4.1. Size:229K  samsung
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SGH23N60UFD

N-CHANNEL IGBT SGH23N60UFFEATURESTO-3P* High Speed Switching* Low Saturation Voltage : VCE(sat) = 1.95 V (@ Ic=12A)* High Input ImpedanceAPPLICATIONSC* AC & DC Motor controls* General Purpose Inverters* Robotics , Servo ControlsG* Power Supply* Lamp Ballast EABSOLUTE MAXIMUM RATINGS Symbol Rating UnitsCharacteristicsVCES 600 VCollector-Emitter Voltage

Otros transistores... SGH10N60RUFD , SGH13N60UFD , SGH15N120RUF , SGH15N120RUFD , SGH15N60RUFD , SGH20N120RUF , SGH20N120RUFD , SGH20N60RUFD , GT50JR22 , SGH25N120RUF , SGH30N60RUF , SGH30N60RUFD , SGH40N60UF , SGH40N60UFD , SGH5N120RUF , SGH5N120RUFD , SGH80N60UF .

History: IGB01N120H2 | OST80N65HMF | IRG4PC30U | MMG50A120B7HN | SSG55N60M | OST75N65HSXF | CPV364M4KPBF

 

 
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